Takeaki Yajima

Charge Writing at the LaAlO3/SrTiO3 Surface

Biased conducting-tip atomic force microscopy (AFM) has been shown to write and erase nanoscale metallic lines at the LaAlO(3)/SrTiO(3) interface. Using various AFM modes, we show the mechanism of conductivity switching is the writing of surface charge. These charges are stably deposited on a wide range of LaAlO(3) thicknesses, including bulk crystals. A strong asymmetry with writing polarity was found for 1 and 2 unit cells of LaAlO(3), providing experimental evidence for a theoretically predicted built-in potential.

Termination control of the interface dipole in La 0.7 Sr 0.3 MnO 3 / Nb : SrTiO 3 (001) Schottky junctions

In order to investigate the interface termination dependence of perovskite band alignments, we have studied the Schottky barrier height at

Visualizing the interfacial evolution from charge compensation to metallic screening across the manganite metal–insulator transition

{\text{La}}_{0.7}{\text{Sr}}_{0.3}{\text{MnO}}_{3}/\text{Nb}:{\text{SrTiO}}_{3}

Positive-bias gate-controlled metal-insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics

(001) heterointerfaces. As the

Ferroelectric phase stabilization of HfO2 by nitrogen doping

\text{Nb}:{\text{SrTiO}}_{3}

Reentrant Insulating State in Ultrathin Manganite Films

semiconductor was varied from

Enhanced Electrical Transparency by Ultrathin LaAlO3 Insertion at Oxide Metal/Semiconductor Heterointerfaces

{\text{TiO}}_{2}

Mn3O4 precipitates in laser-ablated manganite films

termination to SrO termination by variable insertion of a

Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks

{\text{SrMnO}}_{3}

Coexistence of two-dimensional and three-dimensional Shubnikov-de Haas oscillations in Ar+-irradiated KTaO3

layer, a large systematic increase in the Schottky barrier height was observed. This can be ascribed to the evolution of the interface dipole induced to screen the polar discontinuity at the interface, which gives a large internal degree of freedom for tuning band diagrams in oxides.