Takeo Ishibashi

Material for forming a fine pattern and method for manufacturing a semiconductor device using the same

Method of manufacturing a semiconductor device using a minute resist pattern, and a semiconductor device manufactured thereby

Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby

Method of forming a pattern of a multilayer type semiconductor device

Method of manufacturing a semiconductor device having an improved fine structure

Method of manufacturing a semiconductor device and semiconductor device manufactured by the method

Method of forming a fine resist pattern using an alkaline film covered photoresist

Material for forming fine pattern in semiconductor manufacture

Production of a semiconductor device comprises forming a first resist layer on a semiconductor base layer, forming a resist pattern, forming a second resist layer, forming a crosslinked layer

Via-filling material and process for fabricating semiconductor integrated circuit using the material