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Journal of The Electrochemical Society | 1984

Plasma‐Activated Deposition and Properties of Phosphosilicate Glass Film

Akira Takamatsu; Miyoko Shibata; Hideo Sakai; Takeo Yoshimi

Phosphosilicate glass film deposited by a plasma‐activated reaction system (P‐PSG) was studied. Fundamental characteristics of the P‐PSG were investigated by systematically varying deposition parameters. In this plasma deposition method, the P‐PSG having a high deposition rate (130 nm/min) and a high doped phosphorus concentration [about 10 weight percent (w/o) P] was deposited using the reaction gases , , and . The P‐PSG deposited by this method showed properties such as a strong film crack resistance during heat‐treatments, a conformai step coverage, and a controllable compressive stress, compared with those of conventional PSG film deposited under atmospheric pressure (AP‐PSG).


Archive | 1981

Semiconductor device with high density low temperature deposited Siw Nx Hy Oz passivating layer

Kiichiro Mukai; Seiki Harada; Shinichi Muramatsu; Atsushi Hiraiwa; Shigeru Takahashi; Katsuhisa Usami; Seiichi Iwata; Satoru Ito; Takeo Yoshimi


Archive | 1985

Method of forming silicon nitride film and product

Hideo Sakai; Tetsuya Mizutani; Takeo Yoshimi


Journal of The Electrochemical Society | 1980

Analysis of Hydrogen Content in Plasma Silicon Nitride Film

Takeo Yoshimi; Hideo Sakai; Keizo Tanaka


Journal of The Electrochemical Society | 1977

Methods to Improve the Surface Planarity of Locally Oxidized Silicon Devices

Hideo Sakai; Takeo Yoshimi; Katsuro Sugawara


Archive | 1977

Wiring for electronic components

Hideo Sakai; Takeo Yoshimi


Archive | 1976

PLASMA CVD UNIT

Hideo Sakai; Takeo Yoshimi


Archive | 1978

Plasma surface treatment device

Hideo Sakai; Takeo Yoshimi


Archive | 1982

SUPPLYING DEVICE OF SOURCE FOR THIN FILM FORMATION

Tokio Kato; Hideo Sakai; Takeo Yoshimi


Archive | 1980

CVD METHOD AND DEVICE THEREFOR

Hideo Sakai; Miyoko Shibata; Akira Takamatsu; Takeo Yoshimi

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