Takeshi Higashiguchi
Utsunomiya University
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Publication
Featured researches published by Takeshi Higashiguchi.
Applied Physics Letters | 2007
Yoshifumi Ueno; Georg Soumagne; Akira Sumitani; Akira Endo; Takeshi Higashiguchi
We demonstrated enhancement of in-band conversion efficiency (CE) at 13.5nm of the extreme ultraviolet (EUV) emission from a tin (Sn) cavity target irradiated by a CO2 laser pulse. Whereas a planar Sn target produced an in-band CE of around 2%, the use of cavity targets significantly enhanced the EUV emission energy and the EUV CE. An EUV CE of 4% was observed for a Sn cavity target with a depth of 200μm which is one of the highest values ever reported.
Applied Physics Letters | 2010
Takamitsu Otsuka; Deirdre Kilbane; J. White; Takeshi Higashiguchi; Noboru Yugami; Toyohiko Yatagai; Weihua Jiang; Akira Endo; Padraig Dunne; Gerry O’Sullivan
We have demonstrated a laser-produced plasma extreme ultraviolet source operating in the 6.5–6.7 nm region based on rare-earth targets of Gd and Tb coupled with a Mo/B4C multilayer mirror. Multiply charged ions produce strong resonance emission lines, which combine to yield an intense unresolved transition array. The spectra of these resonant lines around 6.7 nm (in-band: 6.7 nm ±1%) suggest that the in-band emission increases with increased plasma volume by suppressing the plasma hydrodynamic expansion loss at an electron temperature of about 50 eV, resulting in maximized emission.
Applied Physics Letters | 2012
Takeshi Higashiguchi; Takamitsu Otsuka; Noboru Yugami; Weihua Jiang; Akira Endo; Bowen Li; Padraig Dunne; Gerry O’Sullivan
We demonstrate a table-top broadband emission water window source based on laser-produced high-Z plasmas. Resonance emission from multiply charged ions merges to produce intense unresolved transition arrays (UTAs) in the 2–4 nm region, extending below the carbon K edge (4.37 nm). Arrays resulting from n=4-n=4 transitions are overlaid with n=4-n=5 emission and shift to shorter wavelength with increasing atomic number. An outline of a microscope design for single-shot live cell imaging is proposed based on a bismuth plasma UTA source, coupled to multilayer mirror optics.
Applied Physics Letters | 2006
Takeshi Higashiguchi; Naoto Dojyo; Masaya Hamada; Wataru Sasaki; Shoichi Kubodera
We demonstrated a low-debris, efficient laser-produced plasma extreme ultraviolet (EUV) source by use of a regenerative liquid microjet target containing tin-dioxide (SnO2) nanoparticles. By using a low SnO2 concentration (6%) solution and dual laser pulses for the plasma control, we observed the EUV conversion efficiency of 1.2% with undetectable debris.
Applied Physics Letters | 2006
Takeshi Higashiguchi; Keita Kawasaki; Wataru Sasaki; Shoichi Kubodera
We demonstrated enhancement of extreme ultraviolet (EUV) emission at 13.5nm from a lithium plasma by use of dual laser pulses. A single laser pulse produced a lithium plasma condition for the EUV emission far beyond its optimum. Utilization of dual laser pulses, however, enhanced the EUV emission energy, and its maximum in-band EUV conversion efficiency (CE) in a measured solid angle was observed to be 2.4% at a pulse separation time between 20 and 50ns. The EUV CE became 1.8 times as large as that produced by a single laser pulse, which was one of the highest values ever reported. Enhancement of the EUV CE was attributed to the decrease of the plasma temperature and density to their optimum values.
Applied Physics Letters | 2011
Takeshi Higashiguchi; Takamitsu Otsuka; Noboru Yugami; Weihua Jiang; Akira Endo; Bowen Li; Deirdre Kilbane; Padraig Dunne; Gerry O’Sullivan
We demonstrate an efficient extreme ultraviolet (EUV) source for operation at λ = 6.7 nm by optimizing the optical thickness of gadolinium (Gd) plasmas. Using low initial density Gd targets and dual laser pulse irradiation, we observed a maximum EUV conversion efficiency (CE) of 0.54% for 0.6% bandwidth (BW) (1.8% for 2% BW), which is 1.6 times larger than the 0.33% (0.6% BW) CE produced from a solid density target. Enhancement of the EUV CE by use of a low-density plasma is attributed to the reduction of self-absorption effects.
Applied Physics Letters | 2010
Takamitsu Otsuka; Deirdre Kilbane; Takeshi Higashiguchi; Noboru Yugami; Toyohiko Yatagai; Weihua Jiang; Akira Endo; Padraig Dunne; Gerry O’Sullivan
We have investigated the dependence of the spectral behavior and conversion efficiencies of rare-earth plasma extreme ultraviolet sources with peak emission at 6.7 nm on laser wavelength and the initial target density. The maximum conversion efficiency was 1.3% at a laser intensity of 1.6×1012 W/cm2 at an operating wavelength of 1064 nm, when self-absorption was reduced by use of a low initial density target. Moreover, the lower-density results in a narrower spectrum and therefore improved spectral purity. It is shown to be important to use a low initial density target and/or to produce low electron density plasmas for efficient extreme ultraviolet sources when using high-Z targets.
Applied Physics Letters | 2012
Thomas Cummins; Takamitsu Otsuka; Noboru Yugami; Weihua Jiang; Akira Endo; Bowen Li; Colm O’Gorman; Padraig Dunne; Emma Sokell; Gerry O’Sullivan; Takeshi Higashiguchi
We have demonstrated an efficient extreme ultraviolet (EUV) source at 6.7 nm by irradiating Gd targets with 0.8 and 1.06 μm laser pulses of 140 fs to 10 ns duration. Maximum conversion efficiency of 0.4% was observed within a 0.6% bandwidth. A Faraday cup observed ion yield and time of flight signals for ions from plasmas generated by each laser. Ion kinetic energy was lower for shorter pulse durations, which yielded higher electron temperatures required for efficient EUV emission, due to higher laser intensity. Picosecond laser pulses were found to be the best suited to 6.7 nm EUV source generation.
Journal of Physics B | 2015
Gerry O’Sullivan; Bowen Li; Rebekah D’Arcy; Padraig Dunne; P. Hayden; Deirdre Kilbane; T. McCormack; Hayato Ohashi; Fergal O’Reilly; Paul Sheridan; Emma Sokell; C. Suzuki; Takeshi Higashiguchi
The primary requirement for the development of tools for extreme ultraviolet lithography (EUVL) has been the identification and optimization of suitable sources. These sources must be capable of producing hundreds of watts of extreme ultraviolet (EUV) radiation within a wavelength bandwidth of 2% centred on 13.5 nm, based on the availability of Mo/Si multilayer mirrors (MLMs) with a reflectivity of ~70% at this wavelength. Since, with the exception of large scale facilities, such as free electron lasers, such radiation is only emitted from plasmas containing moderately to highly charged ions, the source development prompted a large volume of studies of laser produced and discharge plasmas in order to identify which ions were the strongest emitters at this wavelength and the plasma conditions under which their emission was optimized. It quickly emerged that transitions of the type 4p64dn − 4p54dn+1 + 4dn−14f in the spectra of Sn IX to SnXIV were the best candidates and work is still ongoing to establish the plasma conditions under which their emission at 13.5 nm is maximized. In addition, development of other sources at 6.X nm, where X ~ 0.7, has been identified as the wavelength of choice for so-called Beyond EUVL (BEUVL), based on the availability of La/B based MLMs, with theoretical reflectance approaching 80% at this wavelength. Laser produced plasmas of Gd and Tb have been identified as potential source elements, as n = 4 − n = 4 transitions in their ions emit strongly near this wavelength. However to date, the highest conversion efficiency (CE) obtained, for laser to BEUV energy emitted within the 0.6% wavelength bandwidth of the available mirrors is only 0.8%, compared with values of 5% for the 2% bandwidth relevant for the Mo/Si mirrors at 13.5 nm. This suggests a need to identify other potential sources or the selection of other wavelengths for BEUVL. This review deals with the atomic physics of the highly-charged ions relevant to EUV emission at these wavelengths. It considers the developments that have contributed to the realization of the 5% CE at 13.5 nm which underpins the production of high-volume lithography tools, and those that will be required to realize BEUV lithography.
Optics Express | 2013
Takeshi Higashiguchi; Bowen Li; Yuhei Suzuki; Masato Kawasaki; Hayato Ohashi; Shuichi Torii; Daisuke Nakamura; Akihiko Takahashi; Tatsuo Okada; Weihua Jiang; Taisuke Miura; Akira Endo; Padraig Dunne; Gerry O'Sullivan; Tetsuya Makimura
We characterize extreme ultraviolet (EUV) emission from mid-infrared (mid-IR) laser-produced plasmas (LPPs) of the rare-earth element Gd. The energy conversion efficiency (CE) and the spectral purity in the mid-IR LPPs at λL = 10.6 μm were higher than for solid-state LPPs at λL = 1.06 μm, because the plasma produced is optically thin due to the lower critical density, resulting in a CE of 0.7%. The peak wavelength remained fixed at 6.76 nm for all laser intensities studied. Plasma parameters at a mid-IR laser intensity of 1.3×10(11) W/cm(2) was also evaluated by use of the hydrodynamic simulation code to produce the EUV emission at 6.76 nm.