Tamio Yoshida

Emission Properties of Two-Photon Pumped InSb Laser under Magnetic Field

The magnetic tuning characteristics of InSb laser pumped by a TE CO2. laser were studied.The tuning characteristic depended on the carrier density of n-InSb sample. For a sample with low carrier density, the emission energy shifted monotonously to higher energy with increasingmagnetic field and only one linear shift varying as Δe=(\hbarωc-|gc|βH)/2 was o bserved at a high magnetic field. For a sample with high carrier density, the emission energy shifted to lower energy at a low magnetic field, and at a high magnetic field two linear shifts with differentrates to higher energy varying as Δe=(\hbarωc±|gc|βH)/2 were observed. The polarization and the intensity of emission were also investigated. The zero-field emission energy was measured for samples with different carrier densities. A simple transition model is proposed, which can explain the observed magnetic tuning characteristics.

Demonstration of high energy-extraction efficiency in a novel laser-diode pumped eight-pass Nd:YAG zig–zag slab amplifier

Abstract A novel laser-diode pumped eight-pass Nd:YAG zig–zag slab amplifier architecture was developed with the aim of achieving high energy-extraction efficiency. High energy-extraction efficiency of up to 71% for the laser mode volume has been achieved in this amplifier operating at an initial small signal gain of 3.25. The compensation of thermal birefringence in this amplifier was successfully performed.

Real-Time Ellipsometric Measurement during Growth of (AlxGa1-x)0.52In0.48P Thin Films.

We obtained ellipsometric data during the growth of (AlX Ga1-X )0.52In0.48P thin films in real time. We have developed a rotating-analyzer ellipsometer and applied it to an MBE system. It is confirmed that ellipsometry is a good system for monitoring thin film quality and that it can be used to determine the composition ratio from the optical constants of (AlX Ga1-X )0.52In0.48P films grown on GaAs. The thickness and optical constants of a Ga0.52In0.48P/(Al0.4Ga0.6)0.52In0.48P superlattice structure were calculated from ellipsometric data. The average thickness of Ga0.52In0.48P multi-quantum well layers determined by ellipsometry and that determined by photoluminescence showed good agreement. From observation of the surface roughness, it is suggested that a surface roughness of about 6 monolayers was present immediately after the start of growth, and that the surface became planar with time.

Observation of Ellipsometric Oscillations when Depositing SiOx Film on Si(100) Substrate Using an Electron Beam Deposition Method

We have observed ellipsometric oscillations when depositing SiOx film on Si(100) substrate using an electron beam deposition method. A period of these oscillations is calculated to be 5.3 A thick. From an investigation using a rough surface model in ellipsometry, it is considered that this SiOx film is deposited layer-by-layer. This ellipsometry oscillation, first reported in this letter, is applicable to noncrystalline films in which reflection high-energy electron diffraction (RHEED) oscillations are ineffective.