Tanaka Tomoyuki | Researchain

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Archive | 1978

Semiconductor switching device

Tanaka Tomoyuki

Archive | 1977

Mesa semiconductor element with high blocking voltage - has limited impurity gradient near pn-junction and specified depth of mesa groove

Misawa Yutaka; Okamura Masahiro; Tanaka Tomoyuki; Kaneko Hiroshi

Archive | 1982

SEMICONDUCTOR SWITCHING CIRCUIT

Yasuda Yasumichi; Tanaka Tomoyuki; Obayashi Masayuki; Yao Tsutomu; Nagano Takahiro; Nakano Yasuki

Archive | 1996

PARALLEL CIRCUIT WITH DIODE AND IGBT, MODULE THEREFOR, AND POWER CONVERTER USING THE SAME

Kimura Arata; Matsuda Yasuo; Tokunaga Kiichi; Mori Mutsuhiro; Kurosu Toshiki; Suzuki Yutaka; Sakurai Naoki; Yasuda Yasumichi; Tanaka Tomoyuki; Onda Kenichi

Archive | 1986

Semiconductor device comprising a bipolar transistor and a MOSFET.

Yasuda Yasumichi; Tanaka Tomoyuki; Nagano Takahiro; Yatsuo Tsutomu

Archive | 1978

HALBLEITERELEMENTE UND VERFAHREN ZU DEREN HERSTELLUNG

Tanaka Tomoyuki; Shirasawa Toshikatsu; Okamura Masahiro

Archive | 1976

HALBLEITEREINRICHTUNG MIT HOHER SPANNUNGSFESTIGKEIT UND VERFAHREN ZU IHRER HERSTELLUNG

Tanaka Tomoyuki; Ogawa Takuzo; Okamura Masahiro; Misawa Yutaka

Archive | 1991

PARALLEL CIRCUIT OF DIODE AND IGBT, MODULE OF THE CIRCUIT AND INVERTER EMPLOYING THE MODULE

Kimura Arata; Matsuda Yasuo; Tokunaga Kiichi; Mori Mutsuhiro; Kurosu Toshiki; Suzuki Yutaka; Sakurai Naoki; Yasuda Yasumichi; Tanaka Tomoyuki; Onda Kenichi

Archive | 1990