Yasuda Yasumichi | Researchain

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Archive | 1996

SEMICONDUCTOR DEVICE AND POWER CONVERTER USING SEMICONDUCTOR DEVICE

Mori Mutsuhiro; Yasuda Yasumichi; Hosoya Hiromi

Archive | 2000

SEMICONDUCTOR DEVICE AND ELECTRIC POWER CONVERSION DEVICE USING THE DEVICE

Mori Mutsuhiro; Yasuda Yasumichi; Hosoya Hiromi

Archive | 1982

SEMICONDUCTOR SWITCHING CIRCUIT

Yasuda Yasumichi; Tanaka Tomoyuki; Obayashi Masayuki; Yao Tsutomu; Nagano Takahiro; Nakano Yasuki

Archive | 1996

PARALLEL CIRCUIT WITH DIODE AND IGBT, MODULE THEREFOR, AND POWER CONVERTER USING THE SAME

Kimura Arata; Matsuda Yasuo; Tokunaga Kiichi; Mori Mutsuhiro; Kurosu Toshiki; Suzuki Yutaka; Sakurai Naoki; Yasuda Yasumichi; Tanaka Tomoyuki; Onda Kenichi

Archive | 1986

Semiconductor device comprising a bipolar transistor and a MOSFET.

Yasuda Yasumichi; Tanaka Tomoyuki; Nagano Takahiro; Yatsuo Tsutomu

Archive | 1980

GLASS FILM COATING METHOD FOR SEMICONDUCTOR

Yasuda Yasumichi; Misawa Yutaka

Archive | 1996

PLANAR SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD, AND POWER CONVERTER

Murakami Susumu; Yasuda Yasumichi; Mori Mutsuhiro; Kobayashi Hideo

Archive | 1991

PARALLEL CIRCUIT OF DIODE AND IGBT, MODULE OF THE CIRCUIT AND INVERTER EMPLOYING THE MODULE

Kimura Arata; Matsuda Yasuo; Tokunaga Kiichi; Mori Mutsuhiro; Kurosu Toshiki; Suzuki Yutaka; Sakurai Naoki; Yasuda Yasumichi; Tanaka Tomoyuki; Onda Kenichi

Archive | 1990