Tapani Vehmas

Unconstrained splitting ratios in compact double-MMI couplers

A novel guided-wave optical power coupler is presented, based on two 2x2 50/50 multimode interference splitters connected with tapered waveguides that play the role of a phase shifter. By simply changing the length of this phase shifter, these double-MMI couplers can be easily designed to get any desired splitting ratio. Results of simulations are discussed and compared with the characterizations of devices fabricated on micron-scale SOI wafers, to highlight pros and cons of the proposed solution. The fabricated splitters have been found to have average losses about 0.4 ± 0.5 dB and splitting ratios ranging from 56/44 to 96/4.

Low-loss spiral waveguides with ultra-small footprint on a micron scale SOI platform

We have recently characterized spirals waveguides based on 4 μm thick strip waveguides with suitably designed lowloss micron scale bends. Different bends and different lengths have been tested to extrapolate propagation losses and bending losses. In particular lowest bending losses have been found to be smaller than 0.01 dB per turn, while propagation losses are about 0.15 dB/cm. Very small footprint is achieved thanks to a novel bend concept combined to waveguide pitches of a few microns. The unique properties of our waveguides make our platform the ideal one for low loss long spiral waveguides with very small footprint.

Smoothing of microfabricated silicon features by thermal annealing in reducing or inert atmospheres

In this work, high-temperature annealing of reactive ion etched silicon microstructures in H2 and Ar gases is studied. Three types of structural features were etched with four different masks into 100-oriented silicon wafers. Scanning electron microscope and atomic force microscope (AFM) results show that when smoothing due to surface diffusion and desorption of silicon is taking place in both the argon and hydrogen gas environments, the three types of features respond differently to the treatments. The surface diffusion was observed to be strongly dependent on temperature in argon, whereas the transport was more linear and controllable in the hydrogen gas environment. For hydrogen, AFM studies were performed to observe the details of the smoothing process. Finally, some potential applications of these transport phenomena are discussed.

The Euler bend: paving the way for high-density integration on micron-scale semiconductor platforms

We present our recent breakthrough for high density integration in micron-scale thick semiconductor platforms. The novel bend concept is presented from a theoretical point of view and supported by experimental results on silicon strip waveguides, including the smallest low-loss bends ever reported for an optical waveguide. Some experimental example applications to resonators, spirals, and Mach-Zehnder interferometers are also presented, along with envisaged applications to other semiconductor platforms. A special focus will be dedicated to potential applications in III-V platforms, where the novel bend could lead to unprecedented dense integration of devices as well as to novel concepts for active components.

Launching of multi-project wafer runs in ePIXfab with micron-scale silicon rib waveguide technology

Silicon photonics is a rapidly growing R&D field where universities, institutes and companies are all involved and the business expectations for the next few years are high. One of the key enabling elements that led to the present success of silicon photonics is ePIXfab. It is a consortium of institutes that has together offered multi-project wafer (MPW) runs, packaging services, training, and feasibility studies. These services have significantly lowered the barrier of various research groups and companies to start developing silicon photonics. Until now the MPW services have been offered by the ePIXfab partners IMEC, CEA-Leti and IHP, which all use CMOS-type silicon photonics technology with a typical silicon-on-insulator (SOI) waveguide thickness of 220 nm. In November 2013 this MPW offering was expanded by the ePIXfab partner VTT that opened the access to its 3 μm SOI waveguide platform via ePIXfab MPW runs. This technology platform is complementary to the mainstream silicon photonics technology (220 nm) and it offers such benefits as very low losses, small polarization dependency, ultrabroadband operation and low starting costs

Multi-wavelength transceiver integration on SOI for high-performance computing system applications

We present a vision for transceiver integration on a 3 μm SOI waveguide platform for systems scalable to Pb/s. We also present experimental results from the first building blocks developed in the EU-funded RAPIDO project. At 1.3 μm wavelength 80 Gb/s per wavelength is to be achieved using hybrid integration of III-V optoelectronics on SOI. Goals include athermal operation, low-loss I/O coupling, advanced modulation formats and packet switching. An example of the design results is an interposer chip that consists of 12 μm thick SOI waveguides locally tapered down to 3 μm to provide low-loss coupling between an optical single-mode fiber array and the 3 μm SOI chip. First example of experimental results is a 4x4 cyclic AWGs with 5 nm channel spacing, 0.4 dB/facet fiber coupling loss, 3.5 dB center-tocenter loss, and -23 dB adjacent channel crosstalk in 3.5x1.5 mm2 footprint. The second example result is a new VCSEL design that was demonstrated to have up to 40 Gb/s operation at 1.55 μm.

Fabrication-tolerant optical filters for dense integration on a micron-scale SOI platform

We present the first characterization results of some cascaded interleavers that we have recently fabricated on 4 μm thick Silicon on Insulator (SOI) wafers. The filters are based on strip waveguides, micron-scale bends and compact MMIs, all components with low loss and high tolerance to fabrication errors, due to the high mode confinement in the silicon region. A thorough comparison of the found results with the theoretical model will be presented, taking into account fabrication limitations. The fabricated filters will be used in the optical RAM circuits of the RAMPLAS project funded by the European Commission.

Flat-top MZI filters: a novel robust design based on MMI splitters

Multimode Interferometers (MMIs) are an attractive alternative to directional couplers, ensuring more relaxed tolerances to fabrication errors and broader operation bandwidth. The drawback is that only a limited discrete set of splitting ratios is achievable with MMIs of constant cross section. This issue clearly limits their use in flat-top interferometric filters, which design requires, in general, free choice of the splitting ratios. Here we show for the first time that it is possible to design 4-stage flat-top interferometers using only standard MMIs with 50:50 and 85:15 splitting ratios. The design approach is based on the representation of the system on the Bloch sphere. Flat-top interleavers with different free spectral ranges have been designed and fabricated on the silicon photonics platform of VTT, based on 3 μm thick rib and strip waveguides. Two different layouts have been explored: one where all components are collinear and a more compact one which elements have been folded in a spiral shape. All interleavers have been designed for TE polarization, and they work in a wavelength range comparable with the 100 nm bandwidth of the MMI splitters. Even though fabrication imperfections and non-ideal behaviour of both waveguide bends and MMIs led to reduced extinction compared to simulations, most devices show in-band extinction exceeding 15 dB. The in-band losses of the most central channels did not exceed 1.5 dB compared to the reference straight waveguide. The designed interleavers can be employed in cascaded configurations to achieve broadband and fabrication tolerant flat-top wavelength (de)multiplexers.

Second order add/drop filter with a single ring resonator

We show theoretically and experimentally how a flat-top second-order response can be achieved with a self-coupled single add-drop ring resonator based on two couplers with different splitting ratios. The resulting device is a 1x1 filter, reflecting light back in the input waveguide at resonating wavelengths in the passbands, and transmitting light in the output waveguide at all other non-resonating wavelengths. Different implementations of the filter have been designed and fabricated on a micron-scale silicon photonics platform. They are based on compact Euler bends - either U-bends or Lbends - and Multi-Mode Interferometers as splitters for the ring resonators. Different finesse values have been achieved by using either 50:50 MMIs in conjunction with 85:15 MMIs or 85:15 MMIs in conjunction with 95:05 double MMIs. Unlike ordinary lowest order directional couplers, the MMIs couple most of the power in the cross-port which make them particularly suitable for the topology of the self-coupled ring, which would otherwise require a waveguide crossing. Experimental results are presented, showing good agreement with simulations. The proposed devices can find applications as wavelength-selective reflectors for relatively broad-band lasers or used as 2x2 add-drop filters when two exact replicas of the device are placed on the arms of a Mach-Zehnder interferometer.

Fabrication tolerant flat-top interleavers

Integrated circuits based on micron-scale silicon waveguides have the clear advantage of being tolerant to fabrication errors, thanks to the high mode confinement within the guiding core. Here we show how flat-top interleavers can be achieved on a micron-scale silicon photonics platform based on ring-loaded Mach-Zehnder Interferometers (MZIs), without the need for any thermal tuning. Robust designs are also guaranteed by resorting to Multi-Mode Interferometers (MMIs) as power splitters in both the MZIs and the ring resonators. A trade-off between in-band ripple and roll-off can be achieved by changing the ring splitting ratios. In particular rings with different finesse based on MMIs with 50:50, 72:28, and 85:15 splitting ratios have been designed, fabricated and successfully tested. In-band ripples as low as 0.2 dB and extinction ratios exceeding 15 dB have been measured from the fabricated samples. Repeatability of the performances from chip to chip and wafer to wafer is presented to show the tolerance of the devices to fabrication errors. Even though these particular devices have been designed for TE polarization only, polarization insensitive designs can be also achieved. All designs are based on strip waveguides and compact Euler-bends, leading to footprints in the order of 700x300 μm2, also thanks to an optimized configuration. They can find applications as interleavers as such or as stages in cascades of N interleavers to achieve flat-top 1x2N (de)multiplexers.