Tasmiat Rahman

Optical Modeling of Black Silicon for Solar Cells Using Effective Index Techniques

Texturing the surface with both micro and nano scale features to form black silicon is a promising approach in improving solar cell efficiency. In optical modeling of such a surface, it is difficult to balance the accuracy and computational resource. In this work, we develop on a semianalytical model, effective index technique (EIT), which utilizes a finite-difference time domain (FDTD) method to represent the nanoscale texturing as an effective medium, and then apply this to microscale structures, which can then be modeled using the transfer matrix method and ray-tracing. We fabricate and model both periodic and random nanoscale textures, and analyze the accuracy of several effective index models against measured reflectivity. The limitations in the model are identified and coherency of the films is studied. The semianalytical method is shown to perform better than the other effective medium approaches for modeling black silicon and is applicable to modeling multiscale textures, whereas full numerical methods such as FDTD are not. However, although the EIT approach predicts the trends in antireflective performance of a texture, it remains inaccurate when compared with the experiment. Also, as with all effective medium approaches, the EIT does not account for light trapping through scattering.

Characterization of epitaxial heavily-doped silicon regions formed by HWCVD using Micro-Raman and Micro-Photoluminescence Spectroscopy

We report on the characterization of heavily boron doped epitaxial silicon regions grown in a hot-wire chemical vapor deposition tool, using micro-Raman and photoluminescence spectroscopy. In particular, the use of this approach for emitter fabrication in an interdigitated back contact silicon solar cell is studied, by analyzing its suitability concerning selective growth, uniformity, anneal time, and luminescent defects. We show that by reducing the silane flow rate, both the required postanneal time and intensity of defect luminescence are reduced. Furthermore, we show that selective area growth does not affect either the quality of the films or the sharpness of the resulting lateral doping profile. The uniformity of the doping is shown to be better than that achieved using laser doping.

Dataset for "Development of Amorphous Silicon Solar Cells with Plasmonic Light Scattering"

Dataset supporting: Crudgington, Lee, Rahman, Tasmiat and Boden, Stuart (2016) Development of Amorphous Silicon Solar Cells with Plasmonic Light Scattering. Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures.This paper reports the result of simulation and fabrication of the optical effects of metallic nano-particle arrays within amorphous silicon thin-films. A finite-difference time domain approach is used to design and model nano-particle arrays within opto-electronic models of thin-film amorphous silicon. An increase in optical scattering is observed, resulting in an increase in power absorption within the material active region and a reduction in optical reflection from the film surface. It is shown that this enhancement in optical performance depends on the particle size, shape, position within the structure and proximity to the metallic back reflector. Process development of metal-island films on silicon and glass, followed by the fabrication and measurement of amorphous silicon P-I-N devices featuring plasmonic nano-particles is demonstrated; showing an enhancement in-keeping with results achieved using simulation.

Junction Formation With HWCVD and TCAD Model of an Epitaxial Back-Contact Solar Cell

In this paper, we present morphological and electrical characteristics of a junction formed of Si p-type films deposited on an n-type silicon wafer using a hot wire chemical vapor deposition (HWCVD) tool. We describe the fabrication process and study the influence of diborane flow and postprocess annealing in improving junction characteristics. Our morphological studies undertaken using atomic force microscopy show that the initial deposition suffered from voids rather than being a uniform film; however, this improves significantly under our annealing treatment. The improvement in morphology was observed in the electrical characteristics, with estimated Voc doubling and rectification of the junction improving by several orders of magnitude. Fitting of the current-voltage curves to a two-diode model showed that increasing the diborane flow in the process helps reduce the saturation current and ideality factors, while increasing the shunt resistance. Electrochemical capacitance-voltage (ECV) and quasi-steady-state photoconductance measurements are used to characterize the deposited films further. A solar cell device with a silicon epitaxy emitter is modeled using industry-standard 3-D modeling tools and input parameters from experimental data, and the impact of defects is studied. A potential efficiency approaching 25% is shown to be feasible for an optimized device.

Epitaxial Interdigitated Back Contact (IBC) solar cell test platform for novel light trapping schemes

An Interdigitated Back Contact (IBC) solar cell is being developed for evaluation of emerging light trapping schemes of silicon nanowire arrays on pyramidal textured surfaces. The front surface of the baseline IBC cell design was optimized with a thin film coating considering both antireflection and passivation to reduce surface recombination. Addition of a front surface field (FSF) was shown to improve the surface passivation of the cell. PC2D simulations of the baseline device predict an efficiency of 17.4%. Silicon nanowire arrays and hybrid structures of silicon nanowires on pyramids were successfully fabricated. Hemispherical reflectance measurements show that a weighted average reflectance of just 1.89% was achieved. With adequate surface passivation, these highly-effective antireflective structures could result in a power conversion efficiency increase compared to traditional light trapping methods when incorporated into the IBC cell.