Tatsuya Niimi

The Confirmation of the Surface Effect upon Phosphorus Diffusion into Silicon

Fraction of Interstitialcy Component of Phosphorus and Antimony Diffusion in Silicon Takashi Shimizu, Toshio Takagi, Satoru Matsumoto et al. The Distribution of the Excess Vacancies in the Bulk at the Diffusion of Phosphorus into Silicon Satoru Matsumoto, Eisuke Arai, Hiroaki Nakamura et al. Hydrogen-Enhanced Diffusion of Plasma-Doped Phosphorus in Silicon Hiroaki Kakinuma and Mikio Mohri Phosphorus Diffusion in Silicon Free from the Surface Effect under Extrinie Conditions Satoru Matsumoto, Eisuke Arai, Hiroaki Nakamura et al. Inhomogeneous Distributuon of Dislocations in Phosphorus-Diffused Silicon Nobuo Itoh and Tanehiro Nakau Phosphorus Diffusion into Silicon under the Condition of Controlled Surface Concentration Satoru Matsumoto and Tatsuya Niimi Bulk Boundary Condition for Numerical Solution of Simultaneous Diffusion Equations of Phosphorus and Point Defects in Silicon Masayuki Yoshida, Manabu Takahashi and Hajime Tomokage The Confirmation of the Surface Effect upon Phosphorus Diffusion into Silicon

The Retarded Diffusion of Arsenic in Silicon by Thermal Oxidation in Extrinsic Conditions

Etude de la diffusion de lAs dans Si, entre 950 et 1100°C, sous atmosphere inerte ou oxydante. Le coefficient de diffusion de As sexprime par un polynome du 3eme ordre en fonction de la concentration en As. Il est plus faible sous atmosphere oxydante que sous atmosphere inerte a 1000-1100°C. Le degre de diffusion retardee decroit, quand le temps de diffusion augmente

Oscillatory magnetoresistance of p‐type CdCr2Se4 single crystals

The dependence of the magnetoresistance on the magnetic field direction and temperature was measured on p‐type Ag‐doped CdCr2Se4 single crystals with electrical current flow in the 〈111〉 and the 〈001〉 directions. The negative magnetoresistance became maximal at 136u2009°K and was found to vary periodically with the rotation of the magnetic field direction.

Phosphorus Diffusion in Silicon Free from the Surface Effect under Extrinie Conditions

The behaviour of the diffusion coefficient of phosphorus in silicon free from the surface effect under extrinsic conditions has been studied. Diffusions are carried out at 900°C and 1100°C from the source of a thin layer of high concentration of phosphorus (~5×1019 cm-3) inbedded in the interior of silicon. Diffusion coefficients, which are determined by a computer simulation,are larger than the intrinsic diffusion coefficient obtained by Ghoshtagore even in the low con-centration range of the impurity. The magnitude of the diffusion coefficients depends on the concentration of the impurity both at the interface and at the point in the bulk where they are determined. The former dependence is strong, being affected by the generation of the excessvacancy, while the latter is weak and is manifested by the built-in field effect.

Negative resistances in n‐type CdCr2Se4 single crystals

On a specimen of n‐type CdCr2Se4 single crystals, both the current‐ and voltage‐controlled negative resistances have been observed simultaneously at temperatures below 131u2009°K, while at temperatures from 131 to 198u2009°K, only current‐controlled negative resistance had been observed; above 198u2009°K, neither had been observed.