Satoru Matsumoto
Toshiba
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Satoru Matsumoto.
22nd Annual BACUS Symposium on Photomask Technology | 2002
Shinji Yamaguchi; Eiji Yamanaka; Hiroyuki Morinaga; Kohji Hashimoto; Takashi Sakamoto; Akira Hamaguchi; Satoru Matsumoto; Osamu Ikenaga; Soichi Inoue
A new mask methodology of mask defect specifications by fail-bit-map (FBM) analysis of LSI devices was proposed. In this paper, concept of new mask defect specifications based on the FBM analysis is shown and impacts on LSI devices of mask defects are studied and the new methodology for next generation is applied. The new mask defect specifications were implemented in a gate-level mask with defects programmed into a 0.175μm-rule DRAM fabrication process, as follows, Firstly, the programmed defects varied in terms of the types, locations and sizes were designed into the memory cell area on the 0.175μm-rule DRAM gate-level mask. Secondly, the gate-level mask with programmed defects was fabricated with conventional mask process flow and the actual mask defect sizes were measured. Thirdly, exposures of the gate-level mask were carried out with conventional 0.175μm-rule DRAM process. Finally, the large impacts on CDs caused by mask defect printability on wafers were clarified and FBM analysis was performed to characterize the relationship among the actual mask defect variations, the CD variations and electrical function of 0.175μm-rule DRAM. This relationship can facilitate determination of the mask defect specifications on 0.175μm-rule DRAM and also likely contribute to estimate next-generation defect specifications. According to the results of the above procedure, the mask defect specifications for opaque defects should be generally tighter than those for clear defects in view of the printability on the wafers and the FBM analysis. Nevertheless, the FBM results suggested that current mask inspection sensitivity for clear defects was too high. With the new methodology, in regard to the impacts of mask defects not only on wafer CDs but also on LSI devices, we have succeeded in obtaining useful results for the mask defect specifications.
Archive | 2004
Tooru Imai; Satoru Matsumoto; Kiyoshi Okazaki; Yuji Nagata
Archive | 2001
Fumihiro Imamura; Takahiro Nishimura; Hiroshi Ikeda; Satoru Matsumoto
Archive | 1995
Nobuichi Nishimura; Masahiro Imai; Kazutoshi Tani; Yoshiyuki Makino; Satoru Matsumoto; Toru Imai
Archive | 1998
Satoru Matsumoto; Hiroshi Ikeda; Yoshiyuki Makino; Fumihiro Imamura; Nobuichi Nishimura
Archive | 1995
Masahiro Imai; Yoshiyuki Makino; Satoru Matsumoto; Kimihiko Nakamura; Kiyoshi Okazaki; Takayuki Hirano
Archive | 1994
Satoru Matsumoto; Kiyoshi Okazaki; 潔 岡崎; 悟 松本
Archive | 2002
Hiroshi Ikeda; Fumihiro Imamura; Satoru Matsumoto; Takahiro Nishimura; 文広 今村; 悟 松本; 博 池田; 隆宏 西村
Archive | 1999
Fumihiro Imamura; Masumi Ito; Satoru Matsumoto; 文広 今村; 眞純 伊藤; 悟 松本
Archive | 2001
Fumihiro Imamura; Takahiro Nishimura; Hiroshi Ikeda; Satoru Matsumoto