Terry Marta

200/spl deg/C, 96-nm wavelength range, continuous-wave lasing from unbonded GaAs MOVPE-grown vertical cavity surface-emitting lasers

We report record temperature and wavelength range attained using MOVPE-grown AlGaAs vertical cavity surface-emitting lasers (VCSELs). Unbonded continuous-wave lasing is achieved at temperatures up to 200/spl deg/C from these top-emitting VCSELs and operation over a 96-nm wavelength regime near 850 nm is also achieved from the same nominal design. Temperature and wavelength insensitive operation is also demonstrated; threshold current is controlled to within a factor of 2 (2.5-5 mA) for a wavelength range exceeding 50 nm and to within /spl plusmn/30% (5-10 mA) for a temperature range of 190/spl deg/C at 870 nm.<<ETX>>

Hybrid dielectric/AlGaAs mirror spatially filtered vertical cavity top‐surface emitting laser

A novel AlGaAs/AlAs–TiO2/SiO2 hybrid distributed Bragg reflector is implemented in a planar vertical cavity (top)‐surface emitting laser (VCSEL) to control emission (near 850 nm) to a single TEM00‐like mode. This structure exhibits ≳30 dB side‐mode suppression ratio and constant divergence (or modal profile) throughout its operating range (i.e., the detrimental effects of thermal lensing inherent in implanted VCSELs are eliminated); moreover, a record low threshold voltage ≂1.6 V, (0.16 V above photon energy) is obtained, without sacrificing the producibility of the standard all‐epitaxial structure.

Performance, uniformity, and yield of 850-nm VCSELs deposited by MOVPE

Vertical-cavity surface-emitting lasers (VCSELs) emitting near 850 nm and fabricated with the metal-organic vapor phase epitaxy (MOVPE) epitaxial growth technique and a planar proton implant process have been demonstrated with excellent performance, uniformity, and yield across a 3-in wafer. Four thousand lasers were tested on a three-inch-diameter wafer, with a yield of 99.8%. This translates into a yield of 94% for fully functional 34/spl times/1 arrays. The average threshold current, threshold voltage, and dynamic resistance at 10 mA operating current were 3.07 mA, 1.59 V, and 34 ohms, respectively. Uniformity of better than /spl plusmn/9% in threshold current, /spl plusmn/1% in threshold voltage, and /spl plusmn/1.5% in maximum optical output power across a 34-element array was demonstrated.

Switched time-delay elements based on AlGaAs/GaAs optical waveguide technology at 1.32 μm for optically controlled phased-array antennas

Integrated optical time-shift networks consisting of cascaded pairs of 2 x 2 linear electrooptic switches and optical delay lines in GaAs waveguides at 1.32 micron are investigated for true-time optical beam forming in phased array antennas. We report new state-of-the-art results in curved waveguide and corner bend insertion loss, and preliminary results from 2-bit time delay generators (TDGs) constructed in the form of GaAs-based photonic integrated circuits utilizing these components. These results represent significant progress in our longer-term goal of demonstrating a 7-bit TDG with a loss matching monolithic microwave integrated circuit (MMIC) delay line techniques, while providing very wide bandwidth unmatched by MMIC technology.

Long-wavelength VCSELs at Honeywell

In this paper we describe both the 1310 and 1550 nm VCSEL development work at Honeywell using both InP and GaAs substrates, and using both MOCVD and MBE. We describe the material systems, the designs, the growth techniques, and the promising results obtained and compare them to the needs of the communications industry. InGaAsN quantum well based VCSELs have been demonstrated to 1338 nm lasing at temperatures up to 90 C. Continuous wave InP based 1550 nm VCSELs have also been demonstrated.

Vertical cavity surface emitting lasers for spaceborne photonic interconnects

Vertical cavity surface emitting lasers (VCSELs) offer substantial advantages in performance and simplicity of packaging over the edge emitting lasers currently being applied to state-of-the-art photonic interconnects. We have demonstrated operation of VCSELs at cryogenic temperatures and at temperatures as high as 200 degrees Celsius, with a single device operating from minus 55 degrees Celsius to plus 125 degrees Celsius. The devices operate to 14 GHZ and can be operated in excess of 1 GHZ with bias-free operation. Initial radiation tests indicate an order of magnitude improvement in hardness with respect to neutron damage over an LED which is currently used in spaceborne photonic interconnect modules. We also describe the packaging of VCSELs in compact multichip modules. By using passive alignment techniques, optoelectronic devices can be packaged in established multichip module fabrication schemes without adding costly high precision assembly techniques.

VCSEL-based modules for optical interconnects

We present characteristics of 850-nm oxide confined vertical-cavity surface-emitting lasers (VCSELs) developed for applications in optical parallel data links and free- space optical interconnects. Low threshold currents of less than 200 (mu) A, wall-plug efficiencies approaching 30%, operating voltages of less than 2 V for 1 mW of optical power, and operation over a wide temperature range, up to 190 degree(s)C, are demonstrated. We optimized VCSEL arrays for operation at elevated temperatures for use in dense free- space interconnects. Excellent performance uniformity-optical power of 1 +/- 0.1 mW at a drive current of 3 mA-across a 20 X 20 array was achieved at 75 degree(s)C. We integrated 2D top emitting VCSEL arrays with top- illuminated metal-semiconductor-metal detectors for future use with CMOS integrated circuits. We discuss design issues encountered in VCSEL-based modules for optical interconnects.

In vacuo responses of an AlGaAs vertical cavity surface emitting laser irradiated by 4.5 MeV protons

Vertical cavity surface emitting lasers (VCSELs) have high potential for space applications, yet little is known of their sensitivity to radiation under vacuum conditions. The first observations of a commercially available proton implanted quantum well AlGaAs VCSEL operating at 850 nm in vacuo and irradiated by 4.5 MeV protons by a scanning ion microbeam is presented. Degradation of L-I-V responses at a proton dose of 1.19 MGy are discussed with particular attention drawn to heating arising from increased nonradiative carrier recombination and that resulting from the vacuum environment.

Cost Effective Optoelectronic Packaging for Multichip Modules and Backplane Level Optical Interconnects

Optical backplanes are of increasing interest for commercial and military avionic processors, and for commercial supercomputers. Projected interconnection density limits of electrical interconnects are rapidly becoming a bottleneck, preventing optimal exploitation of electronic processor capability. A potential obstacle to the commercial development of optoelectronic interconnect components for backplane-based systems is the small market for such specialized technology. In order to ensure that a cost effective solution is available for backplane based systems, commonality with a higher volume application is required. We describe optical packaging techniques for board level waveguides and multichip modules which exploit materials, processes and equipment already in widespread use in the electronics industry, and which can also be applied to a wide range of optoelectronic modules for local area network and telecommunications applications. Rugged polyetherimide waveguides with losses of 0.24 dB/cm have been integrated with conventional circuit board materials, and optoelectronic die have been packaged in a multichip module process using equipment normally used for purely electronic packaging. Practical optical interfaces and connectors have been demonstrated for board-to-backplane and board-to-multichip module applications, and offer increased pincount over their electrical counterparts while retaining compatibility with existing electrical connector alignment and fabrication tolerances.

FAST-Net optical interconnection prototype demonstration program

This paper reports progress toward the experimental demonstration of a smart pixel based optical interconnection prototype currently being developed under the Free-space Accelerator for Switching Terabit Networks (FAST-Net) project. The prototype system incorporates 2D arrays of monolithically integrated high- bandwidth vertical cavity surface emitting lasers (VCSELs) and photodetectors (PDs). A key aspect of the FAST-Net concept is that all smart pixels are distributed across a single multi-chip plane. This plane is connected to itself via an optical system that consists of an array of matched lenses (one for each smart pixel chip position) and a mirror. The optical interconnect system implements a global point-to-point shuffle pattern. The interleaved 2D arrays of VCSELs and PDs in the prototype are arranged on a clustered self-similar grid pattern with a closest element pitch of 100 micrometers . The circular VCSEL elements have a diameter of 10 micrometers and the square PDs have an active region that is 50 micrometers wide. These arrays are packaged and mounted on circuit boards along with the CMOS driver, receiver, and FPGA controller chips. Micro-positioning mounts are used to effect alignment that is consistent with current MCM chip placement accuracy. Shuffled optical data links between the multiple ICs have been demonstrated in preliminary evaluation of this system. These results suggest that a multi-Terabit optically interconnected MCM module is feasible.