Tetsuro Asano

Schottky barrier diode

In the central region of the substrate, is formed adjacent to the second semiconductor layer and second semiconductor layer adjacent to the guard ring across a third insulating layer between the second semiconductor layer. I.e., between the second semiconductor layer and the second semiconductor layer, forming a third insulating layer covering the first semiconductor layer on the first surface of the substrate (the main surface) is exposed. Thus, the third insulating layer between the second semiconductor layer and the second semiconductor layer, the electrical insulation between the first semiconductor layer and the metal layer of the substrate first face 11a 11 exposed.