Tetsuro Ozawa

Doping effects of groups III, IV, or V elements on the emitter of CRT oxide cathodes

Abstract Doping effects on CRT oxide cathodes was studied with dopant elements of groups III, IV, or V. Doping effects correspond negatively to both resistance of the emitter layer and melting points of dopants. The doping effect mechanism is discussed in terms of electrical conductivity of the emitter layer with interaction between dopants and reducing agents. Based on the idea that diffusibility of dopants could improve conductivity, the highest doping effect has been achieved with ZrO2 coprecipitation doping.

12.4: 32‐inch and 36‐inch Wide CRTs with a Unique Steel SST Mask

We have developed 32-inch and 36-inch Wide CRTs upon that iron tension masks are mounted for the first time as the masks are of corner suspension system. The corner suspension system has their main purpose of mechanical compensation, and the design makes compatibility between doming compensation and drop property possible. Adoption of the tension mask enables not only smaller variable pitch from center to periphery and higher peripheral resolution, but also smaller difference in thickness between the center of panel glasses and their periphery as well as adoption of tinted glasses. Moreover, with the improvement of spot size of electron guns, SVM sensitivity, prevention of cone-halation, and others, a drastic improvement in resolution and contrast has been achieved.