Yoshiki Hayashida

Doping effects of groups III, IV, or V elements on the emitter of CRT oxide cathodes

Abstract Doping effects on CRT oxide cathodes was studied with dopant elements of groups III, IV, or V. Doping effects correspond negatively to both resistance of the emitter layer and melting points of dopants. The doping effect mechanism is discussed in terms of electrical conductivity of the emitter layer with interaction between dopants and reducing agents. Based on the idea that diffusibility of dopants could improve conductivity, the highest doping effect has been achieved with ZrO2 coprecipitation doping.