Teya Topuria

A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications

The first sub-100nm technology that allows the monolithic integration of optical modulators and germanium photodetectors as features into a current 90nm base high-performance logic technology node is demonstrated. The resulting 90nm CMOS-integrated Nano-Photonics technology node is optimized for analog functionality to yield power-efficient single-die multichannel wavelength-mulitplexed 25Gbps transceivers.

CMOS-integrated high-speed MSM germanium waveguide photodetector.

A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 +/- 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into front-end CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal.

Ordered Nanopillar Structured Electrodes for Depleted Bulk Heterojunction Colloidal Quantum Dot Solar Cells

A bulk heterojunction of ordered titania nanopillars and PbS colloidal quantum dots is developed. By using a pre-patterned template, an ordered titania nanopillar matrix with nearest neighbours 275 nm apart and height of 300 nm is fabricated and subsequently filled in with PbS colloidal quantum dots to form an ordered depleted bulk heterojunction exhibiting power conversion efficiency of 5.6%.

Self-assembled ferrimagnet--polymer composites for magnetic recording media.

A self-assembled magnetic recording medium was created using colloidal ferrimagnetic building blocks. Monodisperse cobalt ferrite nanoparticles (CoFe(2)O(4)) were synthesized using solution-based methods and then stabilized in solution using the amphiphilic diblock copolymer, poly(acrylic acid)-b-poly(styrene) (PAA-PS). The acid groups of the acrylate block bound the polymer to the nanoparticle surface via multivalent interactions, while the styrene block afforded the magnetic nanoparticle--polymer complex solubility in organic solvents. Moreover, the diblock copolymer improved the colloidal stability of the ferrimagnetic CoFe(2)O(4) nanoparticles by reducing the strong interparticle magnetic interactions, which typically caused the ferrimagnetic nanoparticles to irreversibly aggregate. The nanoparticle--polymer complex was spin-coated onto a silicon substrate to afford self-organized thin film arrays, with the interparticle spacing determined by the molecular weight of the diblock copolymer. The thin film composite was also exposed to an external magnetic field while simultaneously heated above the glass transition temperature of poly(styrene) to allow the nanoparticles to physically rotate to align their easy axes with the direction of the magnetic field. In order to demonstrate that this self-assembled ferrimagnet--polymer composite was suitable as a magnetic recording media, read/write cycles were demonstrated using a contact magnetic tester. This work provides a simple route to synthesizing stabilized ferrimagnetic nanocrystals that are suitable for developing magnetic recording media.

Direct observation of amorphous to crystalline phase transitions in nanoparticle arrays of phase change materials

We have used time-resolved x-ray diffraction to study the amorphous-crystalline phase transition in 20–80nm particles of the phase change materials Ge2Sb2Te5, nitrogen-doped Ge2Sb2Te5, Ge15Sb85, Sb2Te, and Sb2Te doped with Ag and In. We find that all samples undergo the phase transition with crystallization temperatures close to those of similarly prepared blanket films of the same materials with the exception of Sb2Te that shows the transition at a temperature that is about 40°C higher than that of blanket films. Some of the nanoparticles show a difference in crystallographic texture compared to thick films. Large area arrays of these nanoparticles were fabricated using electron-beam lithography, keeping the sample temperatures well below the crystallization temperatures so as to produce particles that were entirely in the amorphous phase. The observation that particles with diameters as small as 20nm can still undergo this phase transition indicates that phase change solid-state memory technology should...

Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si(111) using silane

We have carried out a detailed study on the vapour-liquid-solid growth of silicon nanowires (SiNWs) on (111)-oriented Si substrates using Au as catalytic seed material. Arrays of individual seeds were patterned by electron-beam lithography, followed by Au evaporation and lift-off. SiNWs were grown using diluted silane as precursor gas in a low-pressure chemical vapor deposition system. The silane partial pressure, substrate temperature, and seed diameter were systematically varied to obtain the growth rate of the NWs and the rate of sidewall deposition. Activation energies of 19kcal∕mol for the axial SiNW growth and 29kcal∕mol for the radial deposition on the SiNW surface are derived from the data. SiNW growth at elevated temperatures is accompanied by significant Au surface diffusion, leading to a loss of Au from the tips of the SiNWs that depends on the layout and density of the Au seeds patterned. In contrast to NWs grown from a thin-film-nucleated substrate, the deterministic patterning of identical A...

Highly-scalable novel access device based on Mixed Ionic Electronic conduction (MIEC) materials for high density phase change memory (PCM) arrays

Phase change memory (PCM) could potentially achieve high density with large, 3Dstacked crosspoint arrays, but not without a BEOL-friendly access device (AD) that can provide high current densities and large ON/OFF ratios. We demonstrate a novel AD based on Cu-ion motion in novel Cu-containing Mixed Ionic Electronic Conduction (MIEC) materials[1, 2]. Experimental results on various device structures show that these ADs provide the ultra-high current densities needed for PCM, exhibit high ON/OFF ratios with excellent uniformity, are highly scalable, and are compatible with <400°C Back-End-Of-the-Line (BEOL) fabrication.

Racetrack memory cell array with integrated magnetic tunnel junction readout

In this paper, we report the first demonstration of CMOS-integrated racetrack memory. The devices measured are complete memory cells integrated into the back end of line of IBM 90 nm CMOS. We show good integration yield across 200 mm wafers. With magnetic field-assist, we demonstrate current-driven read and write operations on cells within a 256-cell CMOS-integrated array.

Phase change nanodot arrays fabricated using a self-assembly diblock copolymer approach

Self-assembling diblock copolymer, polystyrene-b-poly-4-vinylpyridine (PS-b-P4VP), was used as the template for fabricating phase change nanostructures. The high density GeSb nanodots were formed by etching into an amorphous GeSb thin film using silica hard mask which was patterned on top of polymer. The nanodot arrays are 15nm in diameter with 30nm spacing. This is smaller than most structures obtained by e-beam lithography. Time-resolved x-ray diffraction studies showed that the phase transition occurred at 235°C, which is 5°C lower than blanket GeSb film but higher than that of Ge2Sb2Te5 (150°C). GeSb showed good temperature stability for fabrication of small memory devices.

Irreversible reactions studied with nanosecond transmission electron microscopy movies: Laser crystallization of phase change materials

We use multi-frame, nanosecond-scale photo-emission transmission electron microscopy to create movies of irreversible reactions that occur too rapidly to capture with conventional microscopy. The technique is applied to the crystallization of phase change materials used for optical and resistive memory. For those applications, laser- or current-induced crystallization is orders of magnitude too fast to capture with other imaging techniques. We recorded movies of laser-induced crystallization and measured crystal growth rates at temperatures close to where the maximum growth rate occurs. This paves the way for studying crystallization kinetics of phase change materials over the whole range of technologically relevant temperatures.