Philip M. Rice

Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)

Exchange biased magnetic tunnel junction (MTJ) structures are shown to have useful properties for forming magnetic memory storage elements in a novel cross-point architecture. MTJ elements have been developed which exhibit very large magnetoresistive (MR) values exceeding 40% at room temperature, with specific resistance values ranging down to as little as ∼60 Ω(μm)2, and with MR values enhanced by moderate thermal treatments. Large MR values are observed in magnetic elements with areas as small as 0.17 (μm)2. The magnetic field dependent current–voltage characteristics of an MTJ element integrated with a silicon diode are analyzed to extract the MR properties of the MTJ element itself.

A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications

The first sub-100nm technology that allows the monolithic integration of optical modulators and germanium photodetectors as features into a current 90nm base high-performance logic technology node is demonstrated. The resulting 90nm CMOS-integrated Nano-Photonics technology node is optimized for analog functionality to yield power-efficient single-die multichannel wavelength-mulitplexed 25Gbps transceivers.

CMOS-integrated high-speed MSM germanium waveguide photodetector.

A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 +/- 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into front-end CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal.

A Three-Terminal Approach to Developing Spin-Torque Written Magnetic Random Access Memory Cells

Using a self-aligned fabrication process together with multiple-step aligned electron beam lithography, we have developed a nanopillar structure where a third contact can be made to any point within a thin-film multilayer stack. This substantially enhances the versatility of the device by providing the means to apply independent electrical biases to two separate parts of the structure. Here, we demonstrate a joint magnetic spin-valve (SV)/tunnel junction structure sharing a common free layer nanomagnet contacted by this third electrode. A spatially nonuniform spin-polarized current flowing into the free layer via the low-resistance SV path can reverse the magnetic orientation of the free layer as a consequence of the spin-torque (ST) effect, by nucleating a reversal domain at the spin injection site that propagates across the free layer. The free layer magnetic state can then be read out separately via the higher resistance magnetic tunnel junction (MTJ). This three-terminal structure provides a strategy for developing high-performance ST magnetic random access memory (ST-MRAM) cells, which avoids the need to apply a large voltage across a MTJ during the writing step, thereby enhancing device reliability, while retaining the benefits of a high-impedance MTJ for read-out.

Ordered Nanopillar Structured Electrodes for Depleted Bulk Heterojunction Colloidal Quantum Dot Solar Cells

A bulk heterojunction of ordered titania nanopillars and PbS colloidal quantum dots is developed. By using a pre-patterned template, an ordered titania nanopillar matrix with nearest neighbours 275 nm apart and height of 300 nm is fabricated and subsequently filled in with PbS colloidal quantum dots to form an ordered depleted bulk heterojunction exhibiting power conversion efficiency of 5.6%.

Néel “orange-peel” coupling in magnetic tunneling junction devices

We present measurements of the magnitude of Neel “orange-peel” coupling due to interface roughness in a series of magnetic tunneling junction devices. Results from magnetometry and transport measurements are shown to be in good agreement with the theoretical model of Neel. In addition, we have used transmission electron microscopy to directly probe the sample interface roughness and obtain results consistent with the values obtained by magnetometry and transport methods.

Direct observation of amorphous to crystalline phase transitions in nanoparticle arrays of phase change materials

We have used time-resolved x-ray diffraction to study the amorphous-crystalline phase transition in 20–80nm particles of the phase change materials Ge2Sb2Te5, nitrogen-doped Ge2Sb2Te5, Ge15Sb85, Sb2Te, and Sb2Te doped with Ag and In. We find that all samples undergo the phase transition with crystallization temperatures close to those of similarly prepared blanket films of the same materials with the exception of Sb2Te that shows the transition at a temperature that is about 40°C higher than that of blanket films. Some of the nanoparticles show a difference in crystallographic texture compared to thick films. Large area arrays of these nanoparticles were fabricated using electron-beam lithography, keeping the sample temperatures well below the crystallization temperatures so as to produce particles that were entirely in the amorphous phase. The observation that particles with diameters as small as 20nm can still undergo this phase transition indicates that phase change solid-state memory technology should...

Patterned epitaxial vapor-liquid-solid growth of silicon nanowires on Si(111) using silane

We have carried out a detailed study on the vapour-liquid-solid growth of silicon nanowires (SiNWs) on (111)-oriented Si substrates using Au as catalytic seed material. Arrays of individual seeds were patterned by electron-beam lithography, followed by Au evaporation and lift-off. SiNWs were grown using diluted silane as precursor gas in a low-pressure chemical vapor deposition system. The silane partial pressure, substrate temperature, and seed diameter were systematically varied to obtain the growth rate of the NWs and the rate of sidewall deposition. Activation energies of 19kcal∕mol for the axial SiNW growth and 29kcal∕mol for the radial deposition on the SiNW surface are derived from the data. SiNW growth at elevated temperatures is accompanied by significant Au surface diffusion, leading to a loss of Au from the tips of the SiNWs that depends on the layout and density of the Au seeds patterned. In contrast to NWs grown from a thin-film-nucleated substrate, the deterministic patterning of identical A...

Highly-scalable novel access device based on Mixed Ionic Electronic conduction (MIEC) materials for high density phase change memory (PCM) arrays

Phase change memory (PCM) could potentially achieve high density with large, 3Dstacked crosspoint arrays, but not without a BEOL-friendly access device (AD) that can provide high current densities and large ON/OFF ratios. We demonstrate a novel AD based on Cu-ion motion in novel Cu-containing Mixed Ionic Electronic Conduction (MIEC) materials[1, 2]. Experimental results on various device structures show that these ADs provide the ultra-high current densities needed for PCM, exhibit high ON/OFF ratios with excellent uniformity, are highly scalable, and are compatible with <400°C Back-End-Of-the-Line (BEOL) fabrication.

Racetrack memory cell array with integrated magnetic tunnel junction readout

In this paper, we report the first demonstration of CMOS-integrated racetrack memory. The devices measured are complete memory cells integrated into the back end of line of IBM 90 nm CMOS. We show good integration yield across 200 mm wafers. With magnetic field-assist, we demonstrate current-driven read and write operations on cells within a 256-cell CMOS-integrated array.