Thomas Aggerstam

Anomalous k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures

We have observed the

Quest for very high-speed VCSELs : pitfalls and clues

k

Enhancement of both direct-current and microwave characteristics of AlGaN∕GaN high-electron-mobility transistors by furnace annealing

-dependent spin splitting in wurtzite

Study of two-subband population in Fe-doped AlxGa1-xN/GaN heterostructures by persistent photoconductivity effect

{\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{N}∕\mathrm{Ga}\mathrm{N}

GaN/AlN multiple quantum well structures grown by MBE on GaN templates for 1.55 mu m intersubband absorption

heterostructures. An anomalous beating pattern was observed in Shubnikov--de Haas measurements due to the interference of Rashba and Dresselhaus spin-orbit interactions. The dominant mechanism for the

Cracks in GaN/AlN multiple quantum well structures grown by MBE

k

High dose Fe implantation of GaN: damage build-up and dopant redistribution

-dependent spin splitting at high values of

Intersubband photonic devices by group-III nitrides

k

Progress on new wide bandgap materials BGaN, BGaAlN and their potential applications

is attributed to Dresselhaus term which is enhanced by the

Selectively oxidized vertical-cavity surface-emitting lasers for high-speed data communication

{\ensuremath{\Delta}}_{\mathrm{C}1}\text{\ensuremath{-}}{\ensuremath{\Delta}}_{\mathrm{C}3}