Thomas N. Jackson
Pennsylvania State University
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Featured researches published by Thomas N. Jackson.
IEEE Electron Device Letters | 1997
Yen-Yi Lin; D. J. Gundlach; Shelby Forrester Nelson; Thomas N. Jackson
Using two layers of pentacene deposited at different substrate temperatures as the active material, we have fabricated photolithographically defined organic thin-film transistors (OTFTs) with improved field-effect mobility and subthreshold slope. These devices use photolithographically defined gold source and drain electrodes and octadecyltrichlorosilane-treated silicon dioxide gate dielectric. The devices have field-effect mobility as large as 1.5 cm/sup 2//V-s, on/off current ratio larger than 10/sup 8/, near zero threshold voltage, and subthreshold slope less than 1.6 V per decade. To our knowledge, this is the largest field-effect mobility and smallest subthreshold slope yet reported for any organic transistor, and the first time both of these important characteristics have been obtained for a single device.
Applied Physics Letters | 2000
Peter A. Smith; C. D. Nordquist; Thomas N. Jackson; Theresa S. Mayer; Benjamin R. Martin; Jeremiah K. N. Mbindyo; Thomas E. Mallouk
This letter describes an electric-field assisted assembly technique used to position individual nanowires suspended in a dielectric medium between two electrodes defined lithographically on a SiO2 substrate. During the assembly process, the forces that induce alignment are a result of nanowire polarization in the applied alternating electric field. This alignment approach has facilitated rapid electrical characterization of 350- and 70-nm-diameter Au nanowires, which had room-temperature resistivities of approximately 2.9 and 4.5×10−6 Ω cm.
Applied Physics Letters | 2002
C.D. Sheraw; Lisong Zhou; J.R. Huang; D. J. Gundlach; Thomas N. Jackson; Michael G. Kane; Ian G. Hill; M. S. Hammond; J. Campi; B.K. Greening; J. Francl; John L. West
We have fabricated organic thin-film transistor (OTFT)-driven active matrix liquid crystal displays on flexible polymeric substrates. These small displays have 16×16 pixel polymer-dispersed liquid crystal arrays addressed by pentacene active layer OTFTs. The displays were fabricated using a low-temperature process (<110 °C) on flexible polyethylene naphthalate film and are operated as reflective active matrix displays.
Applied Physics Letters | 1998
Shelby Forrester Nelson; Yen-Yi Lin; D. J. Gundlach; Thomas N. Jackson
The charge-carrier transport mechanism in the organic semiconductor pentacene is explored using thin-film transistor structures. The variation of the field-effect mobility with temperature differs from sample to sample, ranging from thermally activated to temperature-independent behavior. This result excludes thermally activated hopping as the fundamental transport mechanism in pentacene thin films, and suggests that traps and/or contact effects may strongly influence the observed characteristics. These results also indicate that field-effect transistors may not be appropriate vehicles for illuminating basic transport mechanisms in organic materials.
IEEE Electron Device Letters | 1997
D. J. Gundlach; Yen-Yi Lin; Thomas N. Jackson; Shelby Forrester Nelson; Darrell G. Schlom
Pentacene-based organic thin-film transistors (TFTs) with field-effect mobility as large as 0.7 cm/sup 2//V/spl middot/s and on/off current ratio larger than 10/sup 8/ have been fabricated. Pentacene films deposited by evaporation at elevated temperature at low-to-moderate deposition rates have a high degree of molecular ordering with micrometer-sized and larger dendritic grains. Such films yield TFTs with large mobility. Films deposited at low temperature or by flash evaporation have small grains and poor molecular ordering and yield TFTs with low mobility.
Applied Physics Letters | 2007
Sung Kyu Park; Thomas N. Jackson; John E. Anthony; Devin A. Mourey
Using the small molecule organic semiconductor 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene), the authors have fabricated the solution-processed organic thin film transistors (OTFTs) with carrier mobility >1cm2∕Vs, current on/off ratio greater than 107, and subthreshold slope <0.3V/decade. The high mobility TIPS-pentacene solution-processed films are deposited from high boiling point solvents and show strong molecular ordering including molecular terracing. Film ordering varies substantially for different solvents and film deposition techniques and OTFT mobility correlates well with film ordering.
Applied Physics Letters | 2006
Lisong Zhou; Alfred Wanga; Sheng-Chu Wu; Jie Sun; Sungkyu Park; Thomas N. Jackson
We have fabricated pentacene organic thin-film transistor (OTFT) driven active matrix organic light-emitting diode (OLED) displays on flexible polyethylene terephthalete substrates. These displays have 48×48 bottom-emission OLED pixels with two pentacene OTFTs used per pixel. Parylene is used to isolate the OTFTs and OLEDs with good OTFT yield and uniformity.
IEEE Transactions on Electron Devices | 1997
Yen-Yi Lin; David J. Gundlach; Shelby Forrester Nelson; Thomas N. Jackson
Organic thin-film transistors using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active electronic material have shown mobility as large as 0.7 cm/sup 2//V-s and on/off current ratio larger than 10/sup 8/; both values are comparable to hydrogenated amorphous silicon devices. On the other hand, these and most other organic TFTs have an undesirably large subthreshold slope. We show here that the large subthreshold slope typically observed is not an intrinsic property of the organic semiconducting material and that devices with subthreshold slope similar to amorphous silicon devices are possible.
Nature Materials | 2008
David J. Gundlach; J. E. Royer; Sungkyu Park; Sankar Subramanian; Oana D. Jurchescu; Behrang H. Hamadani; Andrew J. Moad; Regis J. Kline; Lucile C. Teague; Oleg A. Kirillov; Curt A. Richter; James G. Kushmerick; L. J. Richter; Sean Parkin; Thomas N. Jackson; John E. Anthony
The use of organic materials presents a tremendous opportunity to significantly impact the functionality and pervasiveness of large-area electronics. Commercialization of this technology requires reduction in manufacturing costs by exploiting inexpensive low-temperature deposition and patterning techniques, which typically lead to lower device performance. We report a low-cost approach to control the microstructure of solution-cast acene-based organic thin films through modification of interfacial chemistry. Chemically and selectively tailoring the source/drain contact interface is a novel route to initiating the crystallization of soluble organic semiconductors, leading to the growth on opposing contacts of crystalline films that extend into the transistor channel. This selective crystallization enables us to fabricate high-performance organic thin-film transistors and circuits, and to deterministically study the influence of the microstructure on the device characteristics. By connecting device fabrication to molecular design, we demonstrate that rapid film processing under ambient room conditions and high performance are not mutually exclusive.
Journal of Applied Physics | 2006
D. J. Gundlach; Lisong Zhou; J.A. Nichols; Thomas N. Jackson; P. V. Necliudov; M. S. Shur
We report on parasitic contact effects in organic thin film transistors (OTFTs) fabricated with pentacene films. The influence on the OTFT performance of the source and drain contact metal and the device design was investigated. Top contact (TC) and bottom contact (BC) gated transmission line model (gated-TLM) test structures were used to extract the combined parasitic contact resistance as a function of gate voltage swing and drain-source voltage for OTFTs with gold source and drain contacts. For comparison BC test structures with palladium contacts were studied. Differences in the bias dependence of the contact resistance for TC and BC OTFTs indicate that charge injection and device performance are strongly affected by the device design and processing. The results from this investigation show that TC and BC device performances may be contact limited for high mobility OTFTs with channel lengths less than 10μm.