Susan Trolier-McKinstry

Flexible Technologies for Self-Powered Wearable Health and Environmental Sensing

This article provides the latest advances from the NSF Advanced Self-powered Systems of Integrated sensors and Technologies (ASSIST) center. The work in the center addresses the key challenges in wearable health and environmental systems by exploring technologies that enable ultra-long battery lifetime, user comfort and wearability, robust medically validated sensor data with value added from multimodal sensing, and access to open architecture data streams. The vison of the ASSIST center is to use nanotechnology to build miniature, self-powered, wearable, and wireless sensing devices that can enable monitoring of personal health and personal environmental exposure and enable correlation of multimodal sensors. These devices can empower patients and doctors to transition from managing illness to managing wellness and create a paradigm shift in improving healthcare outcomes. This article presents the latest advances in high-efficiency nanostructured energy harvesters and storage capacitors, new sensing modalities that consume less power, low power computation, and communication strategies, and novel flexible materials that provide form, function, and comfort. These technologies span a spatial scale ranging from underlying materials at the nanoscale to body worn structures, and the challenge is to integrate them into a unified device designed to revolutionize wearable health applications.

Piezoelectric Micromachined Ultrasound Transducer (PMUT) Arrays for Integrated Sensing, Actuation and Imaging

Many applications of ultrasound for sensing, actuation and imaging require miniaturized and low power transducers and transducer arrays integrated with electronic systems. Piezoelectric micromachined ultrasound transducers (PMUTs), diaphragm-like thin film flexural transducers typically formed on silicon substrates, are a potential solution for integrated transducer arrays. This paper presents an overview of the current development status of PMUTs and a discussion of their suitability for miniaturized and integrated devices. The thin film piezoelectric materials required to functionalize these devices are discussed, followed by the microfabrication techniques used to create PMUT elements and the constraints the fabrication imposes on device design. Approaches for electrical interconnection and integration with on-chip electronics are discussed. Electrical and acoustic measurements from fabricated PMUT arrays with up to 320 diaphragm elements are presented. The PMUTs are shown to be broadband devices with an operating frequency which is tunable by tailoring the lateral dimensions of the flexural membrane or the thicknesses of the constituent layers. Finally, the outlook for future development of PMUT technology and the potential applications made feasible by integrated PMUT devices are discussed.

Band Gap and Structure of Single Crystal Bii3: Resolving Discrepancies In Literature

Bismuth tri-iodide (BiI3) is an intermediate band gap semiconductor with potential for room temperature gamma-ray detection applications. Remarkably, very different band gap characteristics and values of BiI3 have been reported in literature, which may be attributed to its complicated layered structure with strongly bound BiI6 octahedra held together by weak van der Waals interactions. Here, to resolve this discrepancy, the band gap of BiI3 was characterized through optical and computational methods and differences among previously reported values are discussed. Unpolarized transmittance and reflectance spectra in the visible to near ultraviolet (UV-Vis) range at room temperature yielded an indirect band gap of 1.67u2009±u20090.09u2009eV, while spectroscopic ellipsometry detected a direct band gap at 1.96u2009±u20090.05u2009eV and higher energy critical point features. The discrepancy between the UV-Vis and ellipsometry results originates from the low optical absorption coefficients (αu2009∼u2009102u2009cm−1) of BiI3 that renders reflection...

Piezoelectricity in ferroelectric thin films: Domain and stress issues

Abstract As ferroelectric thin films are investigated as alternative sensors and actuators for microelectromechanical systems, it is becoming important to understand which mechanisms control the magnitude of the observed piezoelectric properties. It is well known that in bulk soft lead zirconate titanate actuators, over half the room temperature response is in fact associated with domain wall contributions to the properties. However, recent studies on bulk ceramics have demonstrated that the complexity of the domain structure, and the mobility of the twin walls depend on the grain size. This leads to appreciable degradation in the dielectric and piezoelectric properties for grain sizes below a micron. This has significant consequences in thin film actuators since a lateral grain size of one micron is often the upper limit for the observed grain size. In addition, since the pertinent domain walls are ferroelastic as well as ferroelectric, the degree of stress imposed on the film by the substrate can also c...

Sputter deposition of PZT piezoelectric films on thin glass substrates for adjustable x-ray optics

Piezoelectric PbZr(0.52)Ti(0.48)O(3) (PZT) thin films deposited on thin glass substrates have been proposed for adjustable optics in future x-ray telescopes. The light weight of these x-ray optics enables large collecting areas, while the capability to correct mirror figure errors with the PZT thin film will allow much higher imaging resolution than possible with conventional lightweight optics. However, the low strain temperature and flexible nature of the thin glass complicate the use of chemical-solution deposition due to warping of the substrate at typical crystallization temperatures for the PZT. RF magnetron sputtering enabled preparation of PZT films with thicknesses up to 3 μm on Schott D263 glass substrates with much less deformation. X-ray diffraction analysis indicated that the films crystallized with the perovskite phase and showed no indication of secondary phases. Films with 1 cm(2) electrodes exhibited relative permittivity values near 1100 and loss tangents below 0.05. In addition, the remanent polarization was 26 μC/cm(2) with coercive fields of 33 kV/cm. The transverse piezoelectric coefficient was as high as -6.1±0.6 C/m(2). To assess influence functions for the x-ray optics application, the piezoelectrically induced deflection of individual cells was measured and compared with finite-element-analysis calculations. The good agreement between the results suggests that actuation of PZT thin films can control mirror figure errors to a precision of about 5 nm, allowing sub-arcsecond imaging.

Room-temperature voltage tunable phonon thermal conductivity via reconfigurable interfaces in ferroelectric thin films.

Dynamic control of thermal transport in solid-state systems is a transformative capability with the promise to propel technologies including phononic logic, thermal management, and energy harvesting. A solid-state solution to rapidly manipulate phonons has escaped the scientific community. We demonstrate active and reversible tuning of thermal conductivity by manipulating the nanoscale ferroelastic domain structure of a Pb(Zr0.3Ti0.7)O3 film with applied electric fields. With subsecond response times, the room-temperature thermal conductivity was modulated by 11%.

Enhanced flexoelectricity through residual ferroelectricity in barium strontium titanate

Residual ferroelectricity is observed in barium strontium titanate ceramics over 30u2009°C above the global phase transition temperature, in the same temperature range in which anomalously large flexoelectric coefficients are reported. The application of a strain gradient leads to strain gradient-induced poling or flexoelectric poling. This was observed by the development of a remanent polarization in flexoelectric measurements, an induced d33 piezoelectric response even after the strain gradient was removed, and the production of an internal bias of 9u2009kV m−1. It is concluded that residual ferroelectric response considerably enhances the observed flexoelectric response.

In situ measurement of increased ferroelectric/ferroelastic domain wall motion in declamped tetragonal lead zirconate titanate thin films

Ferroelectric/ferroelastic domain reorientation was measured in a 1.9u2009μm thick tetragonal {001} oriented PbZr0.3Ti0.7O3 thin film doped with 1% Mn under different mechanical boundary constraints. Domain reorientation was quantified through the intensity changes in the 002/200 Bragg reflections as a function of applied electric field. To alter the degree of clamping, films were undercut from the underlying substrate by 0%, ∼25%, ∼50%, or ∼75% of the electrode area. As the amount of declamping from the substrate increased from 0% to ∼75%, the degree of ferroelectric/ferroelastic domain reorientation in the films increased more than six fold at three times the coercive field. In a film that was ∼75% released from the substrate, approximately 26% of 90° domains were reoriented under the maximum applied field; this value for domain reorientation compares favorably to bulk ceramics of similar compositions. An estimate for the upper limit of 90° domain reorientation in a fully released film under these condition...

Pathway to the piezoelectronic transduction logic device.

The piezoelectronic transistor (PET) has been proposed as a transduction device not subject to the voltage limits of field-effect transistors. The PET transduces voltage to stress, activating a facile insulator-metal transition, thereby achieving multigigahertz switching speeds, as predicted by modeling, at lower power than the comparable generation field effect transistor (FET). Here, the fabrication and measurement of the first physical PET devices are reported, showing both on/off switching and cycling. The results demonstrate the realization of a stress-based transduction principle, representing the early steps on a developmental pathway to PET technology with potential to contribute to the IT industry.

Bismuth pyrochlore thin films for dielectric energy storage

Thin films of cubic pyrochlore bismuth zinc niobate, bismuth zinc tantalate, and bismuth zinc niobate tantalate were fabricated using chemical solution deposition. This family of materials exhibited moderate relative permittivities between 55u2009±u20092 and 145u2009±u20095 for bismuth zinc tantalate and bismuth zinc niobate, respectively, and low loss tangents on the order of 0.0008u2009±u20090.0001. Increases in the concentration of the tantalum end member increased the dielectric breakdown strength. For example, at 10u2009kHz, the room temperature breakdown strength of bismuth zinc niobate was 5.1 MV/cm, while that of bismuth zinc tantalate was 6.1 MV/cm. This combination of a high breakdown strength and a moderate permittivity led to a high discharged energy storage density for all film compositions. For example, at a measurement frequency of 10 kHz, bismuth zinc niobate exhibited a maximum recoverable energy storage density of 60.8u2009±u20092.0u2009J/cm3, while bismuth zinc tantalate exhibited a recoverable energy storage density of 60.7u2009...