Network


Latest external collaboration on country level. Dive into details by clicking on the dots.

Hotspot


Dive into the research topics where Thomas Schweinboeck is active.

Publication


Featured researches published by Thomas Schweinboeck.


Microelectronics Reliability | 2008

Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling

Roland Biberger; Guenther Benstetter; Thomas Schweinboeck; Peter Breitschopf; Holger Goebel

This study compares two different methods of scanning capacitance microscopy (SCM). The first and approved one operates in contact mode and the second novel one in intermittent-contact (IC) mode. Measurements were performed on several samples and the results are compared. New technical expertises on the novel intermittent-contact method are shown and in conclusion assets and drawbacks of this SCM method are emphasized.


Microelectronics Reliability | 2017

Determination of doping type by calibrated capacitance scanning microwave microscopy

S. Hommel; N. Killat; A. Altes; Thomas Schweinboeck; F. Kreupl

The investigation of dopant distribution in discrete and highly integrated electronic devices is the main application of Scanning Microwave Microscopy in the semiconductor industry. To reliably determine the dopant type and the relation between differently doped areas within an electronic device, a calibration method based on the estimated complex impedance is introduced. The validation on differently doped silicon demonstrates that the method is able to simultaneously acquire accumulation and depletion capacitances. This enables the calculation of a 2D dopant type profile and furthermore provides a monotonic dependence of the measured capacitance on dopant density.


Microelectronics Reliability | 2016

Scanning Microwave Microscopy for Electronic Device Analysis on Nanometre Scale

S. Hommel; N. Killat; A. Altes; Thomas Schweinboeck; Doris Schmitt-Landsiedel; M. Silvestri; O. Haeberlen

Abstract Probing electrical properties of state-of-the-art electronic devices is one of the key features of Scanning Microwave Microscopy. While providing valuable information on charge carrier properties, the combination of an atomic force microscope cantilever with a microwave signal raises the question on the actual spatial resolution of the system. On the example of the highly confined two-dimensional electron gas of an AlGaN/GaN structure, the effective tip radius is demonstrated to be in the range of the theoretical tip radius for sharp tips, while both values differ for unevenly shaped cantilever tips. The presented method demonstrates the role of the microwave excitation region for the spatial resolution of the system as well as the potential of this method to characterise the effective tip radius.


Nanoscale | 2015

Probing resistivity and doping concentration of semiconductors at the nanoscale using scanning microwave microscopy

Enrico Brinciotti; Georg Gramse; S. Hommel; Thomas Schweinboeck; A. Altes; Matthias A. Fenner; Juergen Smoliner; Manuel Kasper; Giorgio Badino; Silviu-Sorin Tuca; Ferry Kienberger


Materials Science and Engineering B-advanced Functional Solid-state Materials | 2005

Simplified tunnelling current calculation for MOS structures with ultra-thin oxides for conductive atomic force microscopy investigations

Werner Frammelsberger; Guenther Benstetter; Richard Stamp; Janice Kiely; Thomas Schweinboeck


Microelectronics Reliability | 2003

Characterization of thin and ultra-thin SiO2 films and SiO2/Si interfaces with combined conducting and topographic atomic force microscopy

Werner Frammelsberger; Guenther Benstetter; Thomas Schweinboeck; Richard Stamp; Janice Kiely


IEEE Transactions on Nanotechnology | 2017

Frequency Analysis of Dopant Profiling and Capacitance Spectroscopy Using Scanning Microwave Microscopy

Enrico Brinciotti; Giulio Campagnaro; Giorgio Badino; Manuel Kasper; Georg Gramse; Silviu Sorin Tuca; Juergen Smoliner; Thomas Schweinboeck; S. Hommel; Ferry Kienberger


Microelectronics Reliability | 2004

AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis.

Guenther Benstetter; Peter Breitschopf; Werner Frammelsberger; Heiko Ranzinger; Peter Reislhuber; Thomas Schweinboeck


Archive | 2014

A semiconductor device and a method for forming a semiconductor device

Erwin Bacher; Jürgen Holzmüller; Hans-Joachim Schulze; Thomas Schweinboeck; Jesper Wittborn; Markus Zundel


international symposium on the physical and failure analysis of integrated circuits | 2018

Resolving Trap-caused Charges by Scanning Microwave Microscopy

S. Hommel; N. Killat; Thomas Schweinboeck; A. Altes; F. Kreupl

Collaboration


Dive into the Thomas Schweinboeck's collaboration.

Top Co-Authors

Avatar

S. Hommel

Infineon Technologies

View shared research outputs
Top Co-Authors

Avatar

A. Altes

Infineon Technologies

View shared research outputs
Top Co-Authors

Avatar

N. Killat

Infineon Technologies

View shared research outputs
Top Co-Authors

Avatar
Top Co-Authors

Avatar

Guenther Benstetter

University of Applied Sciences Deggendorf

View shared research outputs
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Top Co-Authors

Avatar
Researchain Logo
Decentralizing Knowledge