Thomas Schweinboeck
Infineon Technologies
Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Thomas Schweinboeck.
Microelectronics Reliability | 2008
Roland Biberger; Guenther Benstetter; Thomas Schweinboeck; Peter Breitschopf; Holger Goebel
This study compares two different methods of scanning capacitance microscopy (SCM). The first and approved one operates in contact mode and the second novel one in intermittent-contact (IC) mode. Measurements were performed on several samples and the results are compared. New technical expertises on the novel intermittent-contact method are shown and in conclusion assets and drawbacks of this SCM method are emphasized.
Microelectronics Reliability | 2017
S. Hommel; N. Killat; A. Altes; Thomas Schweinboeck; F. Kreupl
The investigation of dopant distribution in discrete and highly integrated electronic devices is the main application of Scanning Microwave Microscopy in the semiconductor industry. To reliably determine the dopant type and the relation between differently doped areas within an electronic device, a calibration method based on the estimated complex impedance is introduced. The validation on differently doped silicon demonstrates that the method is able to simultaneously acquire accumulation and depletion capacitances. This enables the calculation of a 2D dopant type profile and furthermore provides a monotonic dependence of the measured capacitance on dopant density.
Microelectronics Reliability | 2016
S. Hommel; N. Killat; A. Altes; Thomas Schweinboeck; Doris Schmitt-Landsiedel; M. Silvestri; O. Haeberlen
Abstract Probing electrical properties of state-of-the-art electronic devices is one of the key features of Scanning Microwave Microscopy. While providing valuable information on charge carrier properties, the combination of an atomic force microscope cantilever with a microwave signal raises the question on the actual spatial resolution of the system. On the example of the highly confined two-dimensional electron gas of an AlGaN/GaN structure, the effective tip radius is demonstrated to be in the range of the theoretical tip radius for sharp tips, while both values differ for unevenly shaped cantilever tips. The presented method demonstrates the role of the microwave excitation region for the spatial resolution of the system as well as the potential of this method to characterise the effective tip radius.
Nanoscale | 2015
Enrico Brinciotti; Georg Gramse; S. Hommel; Thomas Schweinboeck; A. Altes; Matthias A. Fenner; Juergen Smoliner; Manuel Kasper; Giorgio Badino; Silviu-Sorin Tuca; Ferry Kienberger
Materials Science and Engineering B-advanced Functional Solid-state Materials | 2005
Werner Frammelsberger; Guenther Benstetter; Richard Stamp; Janice Kiely; Thomas Schweinboeck
Microelectronics Reliability | 2003
Werner Frammelsberger; Guenther Benstetter; Thomas Schweinboeck; Richard Stamp; Janice Kiely
IEEE Transactions on Nanotechnology | 2017
Enrico Brinciotti; Giulio Campagnaro; Giorgio Badino; Manuel Kasper; Georg Gramse; Silviu Sorin Tuca; Juergen Smoliner; Thomas Schweinboeck; S. Hommel; Ferry Kienberger
Microelectronics Reliability | 2004
Guenther Benstetter; Peter Breitschopf; Werner Frammelsberger; Heiko Ranzinger; Peter Reislhuber; Thomas Schweinboeck
Archive | 2014
Erwin Bacher; Jürgen Holzmüller; Hans-Joachim Schulze; Thomas Schweinboeck; Jesper Wittborn; Markus Zundel
international symposium on the physical and failure analysis of integrated circuits | 2018
S. Hommel; N. Killat; Thomas Schweinboeck; A. Altes; F. Kreupl