Thomas Stammler
Carl Zeiss AG
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Publication
Featured researches published by Thomas Stammler.
26th Annual International Symposium on Microlithography | 2001
Jo Finders; Louis Jorritsma; Mark Eurlings; Richard Moerman; Henk van Greevenbroek; Jan van Schoot; Donis G. Flagello; Robert John Socha; Thomas Stammler
Currently, the 130 nm SIA node is being implemented at leading edge semiconductor manufacturing facilities. Previously, this node appeared to be the insertion point for 193 nm lithography. However, it is evident that for the majority of applications 248 nm will be the wavelength of choice. This once again raises the question how far DUV lithography (248 nm) will take us. To investigate this, overlay, imaging and productivity related issues have to be considered. Although these items become more and more linked at low k1-factors (e.g. overlay and imaging), this paper will focus on some of the imaging related topics.
Archive | 2003
Bernd Geh; Paul Gräupner; Thomas Stammler; Dirk Stenkamp; Jochen Stühler; Klaus Wurmbrand
Archive | 2010
Johannes Eisenmenger; Thomas Stammler; Richard Ell
Archive | 2009
Johannes Eisenmenger; Thomas Stammler; Richard Ell
Archive | 2009
Thomas Stammler; Christian Wagner; Gerd Reisinger
Archive | 2002
Bernd Geh; Paul Gräupner; Thomas Stammler; Dirk Stenkamp; Jochen Stühler; Klaus Wurmbrand
Archive | 2016
Markus Degünther; Thomas Stammler
Archive | 2015
Markus Degünther; Thomas Stammler
Archive | 2014
Markus Degünther; Thomas Stammler
Archive | 2008
Johannes Eisenmenger; Richard Ell; Thomas Stammler
