Thong Q. Ngo

Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications

The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10−5 A/cm2 at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (Dit) is estimated to be as low as ∼2 × 1012 cm−2 eV−1 under the current growth and anneal conditions. Some interfacial reaction is observed betwee...

Epitaxial c-axis oriented BaTiO3 thin films on SrTiO3-buffered Si(001) by atomic layer deposition

Atomic layer deposition (ALD) of epitaxial c-axis oriented BaTiO3 (BTO) on Si(001) using a thin (1.6 nm) buffer layer of SrTiO3 (STO) grown by molecular beam epitaxy is reported. The ALD growth of crystalline BTO films at 225  °C used barium bis(triisopropylcyclopentadienyl), titanium tetraisopropoxide, and water as co-reactants. X-ray diffraction (XRD) reveals a high degree of crystallinity and c-axis orientation of as-deposited BTO films. Crystallinity is improved after vacuum annealing at 600  °C. Two-dimensional XRD confirms the tetragonal structure and orientation of 7–20-nm thick films. The effect of the annealing process on the BTO structure is discussed. A clean STO/Si interface is found using in-situ X-ray photoelectron spectroscopy and confirmed by cross-sectional scanning transmission electron microscopy. The capacitance-voltage characteristics of 7–20 nm-thick BTO films are examined and show an effective dielectric constant of ∼660 for the heterostructure.

Epitaxial strontium titanate films grown by atomic layer deposition on SrTiO3-buffered Si(001) substrates

Epitaxial strontium titanate (STO) films have been grown by atomic layer deposition (ALD) on Si(001) substrates with a thin STO buffer layer grown by molecular beam epitaxy (MBE). Four unit cells of STO grown by MBE serve as the surface template for ALD growth. The STO films grown by ALD are crystalline as-deposited with minimal, if any, amorphous SiOx layer at the STO-Si interface. The growth of STO was achieved using bis(triisopropylcyclopentadienyl)-strontium, titanium tetraisopropoxide, and water as the coreactants at a substrate temperature of 250 °C. In situ x-ray photoelectron spectroscopy (XPS) analysis revealed that the ALD process did not induce additional Si–O bonding at the STO-Si interface. Postdeposition XPS analysis also revealed sporadic carbon incorporation in the as-deposited films. However, annealing at a temperature of 250 °C for 30 min in moderate to high vacuum (10−6–10−9 Torr) removed the carbon species. Higher annealing temperatures (>275 °C) gave rise to a small increase in Si–O b...

Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al2O3 and HfO2. However, there has been much effort to deposit ternary oxides, such as perovskites (ABO3), with desirable properties for advanced thin film applications. Distinct challenges are presented by the deposition of multi-component oxides using ALD. This review is intended to highlight the research of the many groups that have deposited perovskite oxides by ALD methods. Several commonalities between the studies are discussed. Special emphasis is put on precursor selection, deposition temperatures, and specific property performance (high-k, ferroelectric, ferromagnetic, etc.). Finally, the monolithic integration of perovskite oxides with semiconductors by ALD is reviewed. High-quality epitaxial growth of oxide thin films has traditionally been limited to physical vapor deposition techniques (e.g., molecular beam epitaxy). However, recent studies have demonstrated that epitaxial oxide thin films may be deposited on semiconductor substrates using ALD. This presents an exciting opportunity to integrate functional perovskite oxides for advanced semiconductor applications in a process that is economical and scalable.

Quasi-two-dimensional electron gas at the epitaxial alumina/SrTiO3 interface: Control of oxygen vacancies

In this paper, we report on the highly conductive layer formed at the crystalline γ-alumina/SrTiO3 interface, which is attributed to oxygen vacancies. We describe the structure of thin γ-alumina layers deposited by molecular beam epitaxy on SrTiO3 (001) at growth temperatures in the range of 400–800 °C, as determined by reflection-high-energy electron diffraction, x-ray diffraction, and high-resolution electron microscopy. In situ x-ray photoelectron spectroscopy was used to confirm the presence of the oxygen-deficient layer. Electrical characterization indicates sheet carrier densities of ∼1013 cm−2 at room temperature for the sample deposited at 700 °C, with a maximum electron Hall mobility of 3100 cm2V−1s−1 at 3.2 K and room temperature mobility of 22 cm2V−1s−1. Annealing in oxygen is found to reduce the carrier density and turn a conductive sample into an insulator.

Atomic layer deposition of photoactive CoO/SrTiO3 and CoO/TiO2 on Si(001) for visible light driven photoelectrochemical water oxidation

Cobalt oxide (CoO) films are grown epitaxially on Si(001) by atomic layer deposition (ALD) using a thin (1.6 nm) buffer layer of strontium titanate (STO) grown by molecular beam epitaxy. The ALD growth of CoO films is done at low temperature (170–180  °C), using cobalt bis(diisopropylacetamidinate) and water as co-reactants. Reflection high-energy electron diffraction, X-ray diffraction, and cross-sectional scanning transmission electron microscopy are performed to characterize the crystalline structure of the films. The CoO films are found to be crystalline as-deposited even at the low growth temperature with no evidence of Co diffusion into Si. The STO-buffered Si (001) is used as a template for ALD growth of relatively thicker epitaxial STO and TiO2 films. Epitaxial and polycrystalline CoO films are then grown by ALD on the STO and TiO2 layers, respectively, creating thin-film heterostructures for photoelectrochemical testing. Both types of heterostructures, CoO/STO/Si and CoO/TiO2/STO/Si, demonstrate water photooxidation activity under visible light illumination. In-situ X-ray photoelectron spectroscopy is used to measure the band alignment of the two heterojunctions, CoO/STO and CoO/TiO2. The experimental band alignment is compared to electronic structure calculations using density functional theory.

Growth of epitaxial oxides on silicon using atomic layer deposition: Crystallization and annealing of TiO2 on SrTiO3-buffered Si(001)

Epitaxial anatase titanium dioxide (TiO2) films have been grown by atomic layer deposition (ALD) on Si(001) substrates using a strontium titanate (STO) buffer layer without any amorphous SiOx layer at the STO–Si interface. Four unit cells of STO grown by molecular beam epitaxy (MBE) serve as the surface template for ALD growth. To preserve the quality of the MBE-grown STO, the samples were transferred in situ from the MBE chamber to the ALD chamber. The growth of TiO2 was achieved using titanium isopropoxide and water as the coreactants at a substrate temperature of 250 °C. In situ x-ray photoelectron spectroscopy analysis revealed that the ALD process did not induce Si–O bonding at the STO–Si interface. Slight improvement in crystallinity of the TiO2 film was achieved through in situ annealing under vacuum (10−9 Torr) at 450–600 °C. However, the amount of Si–O bonding increased following annealing at temperatures greater than 250 °C. X-ray diffraction revealed that TiO2 films annealed at a temperature of 250 °C in vacuum (10−9 Torr) for 1 h were the anatase phase and well crystallized. The results indicate that careful consideration of growth temperature and annealing conditions may allow epitaxial oxide films to be grown by ALD on STO-buffered Si(001) substrates without formation of an amorphous SiOx layer.Epitaxial anatase titanium dioxide (TiO2) films have been grown by atomic layer deposition (ALD) on Si(001) substrates using a strontium titanate (STO) buffer layer without any amorphous SiOx layer at the STO–Si interface. Four unit cells of STO grown by molecular beam epitaxy (MBE) serve as the surface template for ALD growth. To preserve the quality of the MBE-grown STO, the samples were transferred in situ from the MBE chamber to the ALD chamber. The growth of TiO2 was achieved using titanium isopropoxide and water as the coreactants at a substrate temperature of 250 °C. In situ x-ray photoelectron spectroscopy analysis revealed that the ALD process did not induce Si–O bonding at the STO–Si interface. Slight improvement in crystallinity of the TiO2 film was achieved through in situ annealing under vacuum (10−9 Torr) at 450–600 °C. However, the amount of Si–O bonding increased following annealing at temperatures greater than 250 °C. X-ray diffraction revealed that TiO2 films annealed at a temperature of...

Quasi-two-dimensional electron gas at the interface of γ-Al2O3/SrTiO3 heterostructures grown by atomic layer deposition

We report the formation of a quasi-two-dimensional electron gas (2-DEG) at the interface of γ-Al2O3/TiO2-terminated SrTiO3 (STO) grown by atomic layer deposition (ALD). The ALD growth of Al2O3 on STO(001) single crystal substrates was performed at temperatures in the range of 200–345 °C. Trimethylaluminum and water were used as co-reactants. In situ reflection high energy electron diffraction, ex situ x-ray diffraction, and ex situ cross-sectional transmission electron microscopy were used to determine the crystallinity of the Al2O3 films. As-deposited Al2O3 films grown above 300 °C were crystalline with the γ-Al2O3 phase. In situ x-ray photoelectron spectroscopy was used to characterize the Al2O3/STO interface, indicating that a Ti3+ feature in the Ti 2p spectrum of STO was formed after 2–3 ALD cycles of Al2O3 at 345 °C and even after the exposure to trimethylaluminum alone at 300 and 345 °C. The interface quasi-2-DEG is metallic and exhibits mobility values of ∼4 and 3000 cm2 V−1 s−1 at room temperature...

Incorporation of La in epitaxial SrTiO3 thin films grown by atomic layer deposition on SrTiO3-buffered Si (001) substrates

Strontium titanate, SrTiO3 (STO), thin films incorporated with lanthanum are grown on Si (001) substrates at a thickness range of 5–25 nm. Atomic layer deposition (ALD) is used to grow the LaxSr1−xTiO3 (La:STO) films after buffering the Si (001) substrate with four-unit-cells of STO deposited by molecular beam epitaxy. The crystalline structure and orientation of the La:STO films are confirmed via reflection high-energy electron diffraction, X-ray diffraction, and cross-sectional transmission electron microscopy. The low temperature ALD growth (∼225 °C) and post-deposition annealing at 550 °C for 5 min maintains an abrupt interface between Si (001) and the crystalline oxide. Higher annealing temperatures (650 °C) show more complete La activation with film resistivities of ∼2.0 × 10−2 Ω cm for 20-nm-thick La:STO (x ∼ 0.15); however, the STO-Si interface is slightly degraded due to the increased annealing temperature. To demonstrate the selective incorporation of lanthanum by ALD, a layered heterostructure ...

Improvement of Solar Energy Conversion with Nb‐Incorporated TiO2 Hierarchical Microspheres

Niobium-modified TiO2 hierarchical spherical micrometer-size particles, which consist of many nanowires, are synthesized by solvothermal synthesis and studied as photoelectrodes for water photo-oxidation and dye-sensitized solar cell (DSSC) applications. Incorporation of Nb leads to a rutile-to-anatase TiO2 phase transition in the TiO2 hierarchical spheres (HSs), with the anatase percentage increasing from 0% for the pristine TiO2 HSs to 47.6% for the 1.82 at.% Nb-incorporated TiO2 sample. Incorporation of Nb leads to significant improvements in water photo-oxidation with the photocurrents reaching 70.5 μA cm(-2) at 1.23 V versus the reversible hydrogen electrode, compared with 28.3 μA cm(-2) for the pristine TiO2 sample. The photoconversion efficiency of Nb:TiO2 HS-based DSSCs reaches 6.09±0.15% at 0.25 at.% Nb, significantly higher than that for the pristine TiO2 HS cells (3.99±0.02%). In addition, the incident-photon-to-current efficiency spectra for DSSCs show that employing TiO2 and Nb:TiO2 HSs provides better light harvesting, especially of long-wavelength photons, than anatase TiO2 nanoparticle-based DSSCs.