Thorsten Kammler
GlobalFoundries
Publication
Featured researches published by Thorsten Kammler.
radio frequency integrated circuits symposium | 2017
Josef S. Watts; Kumaran Sundaram; Kok Wai Chew; Steffen Lehmann; Shih Ni Ong; Wai Heng Chow; Lye Hock Chan; Jerome Mazurier; Christoph Schwan; Yogadissen Andee; Thomas Feudel; Luca Pirro; Elke Erben; Edward J. Nowak; Elliot John Smith; El Mehdi Bazizi; Thorsten Kammler; Richard Taylor; Bryan Rice; David L. Harame
We report an experimental pFET with 420GHz fT, which to the best of our knowledge is the highest value reported for a silicon pFET. The transconductance is 1800uS/um. The technology is fully depleted silicon on insulator (FDSOI) with the pFET channel formed by SiGe condensation. This outstanding performance is achieved by a combination of layout and process optimization which minimizes capacitance and maximizes compressive strain on the channel. The technology features a high-k metal gate and short gate length (20nm drawn) in addition to the SiGe channel for high mobility.
Archive | 2006
Andy Wei; Thorsten Kammler; Jan Hoentschel; Manfred Horstmann
Archive | 2010
Carsten Reichel; Thorsten Kammler; Annekathrin Zeun; Stephan Kronholz
Archive | 2007
Andreas Gehring; Markus Lenski; Jan Hoentschel; Thorsten Kammler
Archive | 2010
Martin Trentzsch; Thorsten Kammler; Rolf Stephan
Archive | 2008
Andreas Gehring; Maciej Wiatr; Andy Wei; Thorsten Kammler; Roman Boschke; Casey Scott
Archive | 2010
Stephan Kronholz; Carsten Reichel; Annekathrin Zeun; Thorsten Kammler
Archive | 2013
Indradeep Sen; Thorsten Kammler; Andreas Knorr; Akif Sultan
Archive | 2010
Carsten Reichel; Thorsten Kammler; Annekathrin Zeun; Stephan Kronholz
Thin Solid Films | 2012
Carsten Reichel; Joerg Schoenekess; Stephan Kronholz; Gunda Beernink; Annekathrin Zeun; Andreas Dietel; Thorsten Kammler
