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Dive into the research topics where Thorsten Kammler is active.

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Featured researches published by Thorsten Kammler.


radio frequency integrated circuits symposium | 2017

RF-pFET in fully depleted SOI demonstrates 420 GHz F T

Josef S. Watts; Kumaran Sundaram; Kok Wai Chew; Steffen Lehmann; Shih Ni Ong; Wai Heng Chow; Lye Hock Chan; Jerome Mazurier; Christoph Schwan; Yogadissen Andee; Thomas Feudel; Luca Pirro; Elke Erben; Edward J. Nowak; Elliot John Smith; El Mehdi Bazizi; Thorsten Kammler; Richard Taylor; Bryan Rice; David L. Harame

We report an experimental pFET with 420GHz fT, which to the best of our knowledge is the highest value reported for a silicon pFET. The transconductance is 1800uS/um. The technology is fully depleted silicon on insulator (FDSOI) with the pFET channel formed by SiGe condensation. This outstanding performance is achieved by a combination of layout and process optimization which minimizes capacitance and maximizes compressive strain on the channel. The technology features a high-k metal gate and short gate length (20nm drawn) in addition to the SiGe channel for high mobility.


Archive | 2006

Transistor having an embedded tensile strain layer with reduced offset to the gate electrode and a method for forming the same

Andy Wei; Thorsten Kammler; Jan Hoentschel; Manfred Horstmann


Archive | 2010

Enhancing deposition uniformity of a channel semiconductor alloy by an in situ etch process

Carsten Reichel; Thorsten Kammler; Annekathrin Zeun; Stephan Kronholz


Archive | 2007

METHOD FOR REDUCING CRYSTAL DEFECTS IN TRANSISTORS WITH RE-GROWN SHALLOW JUNCTIONS BY APPROPRIATELY SELECTING CRYSTALLINE ORIENTATIONS

Andreas Gehring; Markus Lenski; Jan Hoentschel; Thorsten Kammler


Archive | 2010

Reducing the creation of charge traps at gate dielectrics in MOS transistors by performing a hydrogen treatment

Martin Trentzsch; Thorsten Kammler; Rolf Stephan


Archive | 2008

METHOD FOR FORMING SILICON/GERMANIUM CONTAINING DRAIN/SOURCE REGIONS IN TRANSISTORS WITH REDUCED SILICON/GERMANIUM LOSS

Andreas Gehring; Maciej Wiatr; Andy Wei; Thorsten Kammler; Roman Boschke; Casey Scott


Archive | 2010

FORMATION OF A CHANNEL SEMICONDUCTOR ALLOY BY DEPOSITING A HARD MASK FOR THE SELECTIVE EPITAXIAL GROWTH

Stephan Kronholz; Carsten Reichel; Annekathrin Zeun; Thorsten Kammler


Archive | 2013

SELF-ALIGNED SILICIDATION FOR REPLACEMENT GATE PROCESS

Indradeep Sen; Thorsten Kammler; Andreas Knorr; Akif Sultan


Archive | 2010

Erhöhen der Abscheidegleichmäßigkeit für eine Halbleiterlegierung durch einen in-situ-Ätzprozess

Carsten Reichel; Thorsten Kammler; Annekathrin Zeun; Stephan Kronholz


Thin Solid Films | 2012

SiGe channels for VT control of high-k metal gate transistors for 32 nm complementary metal oxide semiconductor technology and beyond

Carsten Reichel; Joerg Schoenekess; Stephan Kronholz; Gunda Beernink; Annekathrin Zeun; Andreas Dietel; Thorsten Kammler

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