Thorsten Mehrtens

Composition mapping in InGaN by scanning transmission electron microscopy

We suggest a method for chemical mapping that is based on scanning transmission electron microscopy (STEM) imaging with a high-angle annular dark field (HAADF) detector. The analysis method uses a comparison of intensity normalized with respect to the incident electron beam with intensity calculated employing the frozen lattice approximation. This procedure is validated with an In(0.07)Ga(0.93)N layer with homogeneous In concentration, where the STEM results were compared with energy filtered imaging, strain state analysis and energy dispersive X-ray analysis. Good agreement was obtained, if the frozen lattice simulations took into account static atomic displacements, caused by the different covalent radii of In and Ga atoms. Using a sample with higher In concentration and series of 32 images taken within 42 min scan time, we did not find any indication for formation of In rich regions due to electron beam irradiation, which is reported in literature to occur for the parallel illumination mode. Image simulation of an In(0.15)Ga(0.85)N layer that was elastically relaxed with empirical Stillinger-Weber potentials did not reveal significant impact of lattice plane bending on STEM images as well as on the evaluated In concentration profiles for specimen thicknesses of 5, 15 and 50 nm. Image simulation of an abrupt interface between GaN and In(0.15)Ga(0.85)N for specimen thicknesses up to 200 nm showed that artificial blurring of interfaces is significantly smaller than expected from a simple geometrical model that is based on the beam convergence only. As an application of the method, we give evidence for the existence of In rich regions in an InGaN layer which shows signatures of quantum dot emission in microphotoluminescence spectroscopy experiments.

Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography

A method for determining concentrations from high-angle annular dark field-scanning transmission electron microscopy images is presented. The method is applied to an InGaN/GaN multi-quantum well structure with high In content, as used for the fabrication of light emitting diodes and laser diodes emitting in the green spectral range. Information on specimen thickness and In concentration is extracted by comparison with multislice calculations. Resulting concentration profiles are in good agreement with a comparative atom probe tomography analysis. Indium concentrations in the quantum wells ranging from 26 at. % to 33 at. % are measured in both cases.

Effects of instrument imperfections on quantitative scanning transmission electron microscopy.

Several instrumental imperfections of transmission electron microscopes are characterized and their effects on the results of quantitative scanning electron microscopy (STEM) are investigated and quantified using simulations. Methods to either avoid influences of these imperfections during acquisition or to include them in reference calculations are proposed. Particularly, distortions inflicted on the diffraction pattern by an image-aberration corrector can cause severe errors of more than 20% if not accounted for. A procedure for their measurement is proposed here. Furthermore, afterglow phenomena and nonlinear behavior of the detector itself can lead to incorrect normalization of measured intensities. Single electrons accidentally impinging on the detector are another source of error but can also be exploited for threshold-less calibration of STEM images to absolute dose, incident beam current determination and measurement of the detector sensitivity.

Atomic scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content

Using scanning transmission electron microscopy (STEM), we have studied ultra-thin ( 25 %) suitable for blue-green light emitting devices. We are able to analyze the QW on an atomic scale with high resolution STEM and derive the indium content quantitatively. In our analysis, we find that indium is not only incorporated into the QW but also into the barriers under certain growth conditions. We observe indium tails or even plateau-like structures in the barriers, caused by excess indium being supplied during quantum well growth.

Theoretical study of precision and accuracy of strain analysis by nano-beam electron diffraction.

Measurement of lattice strain is important to characterize semiconductor nanostructures. As strain has large influence on the electronic band structure, methods for the measurement of strain with high precision, accuracy and spatial resolution in a large field of view are mandatory. In this paper we present a theoretical study of precision and accuracy of measurement of strain by convergent nano-beam electron diffraction. It is found that the accuracy of the evaluation suffers from halos in the diffraction pattern caused by a variation of strain within the area covered by the focussed electron beam. This effect, which is expected to be strong at sharp interfaces between materials with different lattice plane distances, will be discussed for convergent-beam electron diffraction patterns using a conventional probe and for patterns formed by a precessing electron beam. Furthermore, we discuss approaches to optimize the accuracy of strain measured at interfaces. The study is based on the evaluation of diffraction patterns simulated for different realistic structures that have been investigated experimentally in former publications. These simulations account for thermal diffuse scattering using the frozen-lattice approach and the modulation-transfer function of the image-recording system. The influence of Poisson noise is also investigated.

Nanoscopic Insights into InGaN/GaN Core–Shell Nanorods: Structure, Composition, and Luminescence

Nitride-based three-dimensional core-shell nanorods (NRs) are promising candidates for the achievement of highly efficient optoelectronic devices. For a detailed understanding of the complex core-shell layer structure of InGaN/GaN NRs, a systematic determination and correlation of the structural, compositional, and optical properties on a nanometer-scale is essential. In particular, the combination of low-temperature cathodoluminescence (CL) spectroscopy directly performed in a scanning transmission electron microscope (STEM), and quantitative high-angle annular dark field imaging enables a comprehensive study of the nanoscopic attributes of the individual shell layers. The investigated InGaN/GaN core-shell NRs, which were grown by metal-organic vapor-phase epitaxy using selective-area growth exhibit an exceptionally low density of extended defects. Using highly spatially resolved CL mapping of single NRs performed in cross-section, we give a direct insight into the optical properties of the individual core-shell layers. Most interesting, we observe a red shift of the InGaN single quantum well from 410 to 471 nm along the nonpolar side wall. Quantitative STEM analysis of the active region reveals an increasing thickness of the single quantum well (SQW) from 6 to 13 nm, accompanied by a slight increase of the indium concentration along the nonpolar side wall from 11% to 13%. Both effects, the increased quantum-well thickness and the higher indium incorporation, are responsible for the observed energetic shift of the InGaN SQW luminescence. Furthermore, compositional mappings of the InGaN quantum well reveal the formation of locally indium rich regions with several nanometers in size, leading to potential fluctuations in the InGaN SQW energy landscape. This is directly evidenced by nanometer-scale resolved CL mappings that show strong localization effects of the excitonic SQW emission.

Optimization of the preparation of GaN-based specimens with low-energy ion milling for (S)TEM.

We report on optimization of electron transparent GaN based specimens for transmission electron microscopy (TEM) and scanning TEM (STEM) studies by combining focused ion beam thinning and low-energy (≤500 eV) Ar-ion milling. Energy dependent ion milling effects on GaN based structures are investigated and the quality of ion milled samples is compared with that of specimens prepared by wet chemical etching. Defects formed during ion milling lead to amorphization of the specimen. The experimental results are compared with Monte-Carlo simulations using the SRIM (stopping and range of ions in matter) software. Specimen thickness was deduced from high-angle annular dark field STEM images by normalization of measured intensities with respect to the intensity of the scanning electron probe and comparison with multislice simulations in the frozen lattice approach. The results show that the thickness of the amorphous surface layer can be successfully reduced below 1 nm by low energy ion milling, leading to a homogeneous image contrast in TEM and STEM, so that good conditions for quantitative analysis can be achieved. For an ion energy of 400 eV the thickness measurements resulted in an etching rate of about 6-8 nm/min.

Measurement of indium concentration profiles and segregation efficiencies from high-angle annular dark field-scanning transmission electron microscopy images.

We investigated segregation of indium in an InxGa1-xAs/GaAs heterostructure via high-angle annular dark field-scanning transmission electron microscopy (HAADF-STEM), where contrast strongly depends on the nuclear charges of the scattering atoms (Z-contrast). Indium concentration maps have been deduced from HAADF-STEM images by comparing normalized measured intensities with multislice simulations in the frozen lattice approach. Segregation coefficients were derived following the segregation model of Muraki et al.. This is demonstrated for HAADF-STEM images recorded in [100] and [110] zone-axes. Determined indium concentrations and segregation coefficients are compared with results from composition analysis by lattice fringe analysis (CELFA) measurements and energy-dispersive X-ray analysis (EDX).

Homogeneity and composition of AlInGaN: A multiprobe nanostructure study

The electronic properties of quaternary AlInGaN devices significantly depend on the homogeneity of the alloy. The identification of compositional fluctuations or verification of random-alloy distribution is hence of grave importance. Here, a comprehensive multiprobe study of composition and compositional homogeneity is presented, investigating AlInGaN layers with indium concentrations ranging from 0 to 17at% and aluminium concentrations between 0 and 39 at% employing high-angle annular dark field scanning electron microscopy (HAADF STEM), energy dispersive X-ray spectroscopy (EDX) and atom probe tomography (APT). EDX mappings reveal distributions of local concentrations which are in good agreement with random alloy atomic distributions. This was hence investigated with HAADF STEM by comparison with theoretical random alloy expectations using statistical tests. To validate the performance of these tests, HAADF STEM image simulations were carried out for the case of a random-alloy distribution of atoms and for the case of In-rich clusters with nanometer dimensions. The investigated samples, which were grown by metal-organic vapor phase epitaxy (MOVPE), were thereby found to be homogeneous on this nanometer scale. Analysis of reconstructions obtained from APT measurements yielded matching results. Though HAADF STEM only allows for the reduction of possible combinations of indium and aluminium concentrations to the proximity of isolines in the two-dimensional composition space. The observed ranges of composition are in good agreement with the EDX and APT results within the respective precisions.

Materials characterisation by angle-resolved scanning transmission electron microscopy

Solid-state properties such as strain or chemical composition often leave characteristic fingerprints in the angular dependence of electron scattering. Scanning transmission electron microscopy (STEM) is dedicated to probe scattered intensity with atomic resolution, but it drastically lacks angular resolution. Here we report both a setup to exploit the explicit angular dependence of scattered intensity and applications of angle-resolved STEM to semiconductor nanostructures. Our method is applied to measure nitrogen content and specimen thickness in a GaNxAs1−x layer independently at atomic resolution by evaluating two dedicated angular intervals. We demonstrate contrast formation due to strain and composition in a Si- based metal-oxide semiconductor field effect transistor (MOSFET) with GexSi1−x stressors as a function of the angles used for imaging. To shed light on the validity of current theoretical approaches this data is compared with theory, namely the Rutherford approach and contemporary multislice simulations. Inconsistency is found for the Rutherford model in the whole angular range of 16–255 mrad. Contrary, the multislice simulations are applicable for angles larger than 35 mrad whereas a significant mismatch is observed at lower angles. This limitation of established simulations is discussed particularly on the basis of inelastic scattering.