Tim Grieb

Determination of the chemical composition of GaNAs using STEM HAADF imaging and STEM strain state analysis.

The nitrogen concentration of GaN(0.01≤x≤0.05)As(1-x) quantum wells was determined from high resolution scanning transmission electron microscopy (HRSTEM) images taken with a high-angle annular dark field (HAADF) detector. This was done by applying two independent methods: evaluation of the scattering intensity and strain state analysis. The HAADF scattering intensity was computed by multislice simulations taking into account the effect of static atomic displacements and thermal diffuse scattering. A comparison of the mean intensity per atom column on the experimental images with these simulations enabled us to generate composition maps with atomic scale resolution. STEM simulations of large supercells proved that local drops of the HAADF intensity observed close to embedded quantum wells are caused by surface strain relaxation. The same STEM images were evaluated by strain state analysis. We suggest a real space method which is not affected by fly-back errors in HRSTEM images. The results of both evaluation methods are in accordance with data obtained from X-ray diffraction measurements.

Measurement of atomic electric fields and charge densities from average momentum transfers using scanning transmission electron microscopy

This study sheds light on the prerequisites, possibilities, limitations and interpretation of high-resolution differential phase contrast (DPC) imaging in scanning transmission electron microscopy (STEM). We draw particular attention to the well-established DPC technique based on segmented annular detectors and its relation to recent developments based on pixelated detectors. These employ the expectation value of the momentum transfer as a reliable measure of the angular deflection of the STEM beam induced by an electric field in the specimen. The influence of scattering and propagation of electrons within the specimen is initially discussed separately and then treated in terms of a two-state channeling theory. A detailed simulation study of GaN is presented as a function of specimen thickness and bonding. It is found that bonding effects are rather detectable implicitly, e.g., by characteristics of the momentum flux in areas between the atoms than by directly mapping electric fields and charge densities. For strontium titanate, experimental charge densities are compared with simulations and discussed with respect to experimental artifacts such as scan noise. Finally, we consider practical issues such as figures of merit for spatial and momentum resolution, minimum electron dose, and the mapping of larger-scale, built-in electric fields by virtue of data averaged over a crystal unit cell. We find that the latter is possible for crystals with an inversion center. Concerning the optimal detector design, this study indicates that a sampling of 5mrad per pixel is sufficient in typical applications, corresponding to approximately 10×10 available pixels.

Effects of instrument imperfections on quantitative scanning transmission electron microscopy.

Several instrumental imperfections of transmission electron microscopes are characterized and their effects on the results of quantitative scanning electron microscopy (STEM) are investigated and quantified using simulations. Methods to either avoid influences of these imperfections during acquisition or to include them in reference calculations are proposed. Particularly, distortions inflicted on the diffraction pattern by an image-aberration corrector can cause severe errors of more than 20% if not accounted for. A procedure for their measurement is proposed here. Furthermore, afterglow phenomena and nonlinear behavior of the detector itself can lead to incorrect normalization of measured intensities. Single electrons accidentally impinging on the detector are another source of error but can also be exploited for threshold-less calibration of STEM images to absolute dose, incident beam current determination and measurement of the detector sensitivity.

Strain, composition and disorder in ADF imaging of semiconductors

The effect of strain, composition and disorder in ADF images is systematically studied as a function of detection angle in order to understand the main contrast mechanisms. We demonstrate that the complex phenomenology in ADF images can be accounted for by accurate simulations and modelling. The advantage of an accurate modelling on the image interpretation will be demonstrated in the case of dislocations, chemical analysis of InGaP/GaAs and most noticeably the measurement of both In and N content in quaternary InGaAsN.

Quantitative chemical evaluation of dilute GaNAs using ADF STEM: avoiding surface strain induced artifacts.

The high angle annular dark field intensity (HAADF) in scanning transmission electron microscopy (STEM) can be used for a quantitative evaluation of the chemical composition in dilute GaNAs quantum wells by comparison with simulated intensities. As the scattered intensity is highly sensitive to surface strain fields originating from the quantum wells embedded in GaAs, the HAADF intensity is difficult to evaluate in a quantitative way as long as strain contrast cannot be distinguished from chemical contrast. We present a method to achieve full 2D HAADF STEM compositional mapping of GaNAs/GaAs quantum well systems by making use of information from two different camera lengths.

Theoretical study of precision and accuracy of strain analysis by nano-beam electron diffraction.

Measurement of lattice strain is important to characterize semiconductor nanostructures. As strain has large influence on the electronic band structure, methods for the measurement of strain with high precision, accuracy and spatial resolution in a large field of view are mandatory. In this paper we present a theoretical study of precision and accuracy of measurement of strain by convergent nano-beam electron diffraction. It is found that the accuracy of the evaluation suffers from halos in the diffraction pattern caused by a variation of strain within the area covered by the focussed electron beam. This effect, which is expected to be strong at sharp interfaces between materials with different lattice plane distances, will be discussed for convergent-beam electron diffraction patterns using a conventional probe and for patterns formed by a precessing electron beam. Furthermore, we discuss approaches to optimize the accuracy of strain measured at interfaces. The study is based on the evaluation of diffraction patterns simulated for different realistic structures that have been investigated experimentally in former publications. These simulations account for thermal diffuse scattering using the frozen-lattice approach and the modulation-transfer function of the image-recording system. The influence of Poisson noise is also investigated.

Coherently Embedded Ag Nanostructures in Si: 3D Imaging and their application to SERS

Surface enhanced Raman spectroscopy (SERS) has been established as a powerful tool to detect very low-concentration bio-molecules. One of the challenging problems is to have reliable and robust SERS substrate. Here, we report on a simple method to grow coherently embedded (endotaxial) silver nanostructures in silicon substrates, analyze their three-dimensional shape by scanning transmission electron microscopy tomography and demonstrate their use as a highly reproducible and stable substrate for SERS measurements. Bi-layers consisting of Ag and GeOx thin films were grown on native oxide covered silicon substrate using a physical vapor deposition method. Followed by annealing at 800°C under ambient conditions, this resulted in the formation of endotaxial Ag nanostructures of specific shape depending upon the substrate orientation. These structures are utilized for detection of Crystal Violet molecules of 5 × 10−10 M concentrations. These are expected to be one of the highly robust, reusable and novel substrates for single molecule detection.

Compositional characterization of GaAs/GaAsSb nanowires by quantitative HAADF-STEM.

The Sb concentration in axial GaAs(1-x)Sb(x) inserts of otherwise pure GaAs nanowires has been investigated with quantitative high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The Sb concentration was quantified by comparing the experimental image intensities normalized to the incident beam intensity with intensities simulated with a frozen lattice multislice approach. Including static atomic displacements in the simulations was found to be crucial for correct compositional analysis of GaAs(1-x)Sb(x). HAADF intensities of individual nanowires were analysed both across the nanowires, exploiting their hexagonal cross-sectional shape, and along the evenly thick central part of the nanowires. From the cross-sectional intensity profiles, a decrease in the Sb concentration towards the nanowire outer surfaces was found. The longitudinal intensity profiles revealed a gradual build-up of Sb in the insert. The decrease of the Sb concentration towards the upper interface was either gradual or abrupt, depending on the growth routine chosen. The compositional analysis with quantitative HAADF-STEM was verified by energy dispersive X-ray spectroscopy.

Simultaneous quantification of indium and nitrogen concentration in InGaNAs using HAADF-STEM.

To unambiguously evaluate the indium and nitrogen concentrations in In(x)Ga(1-x)N(y)As(1-y), two independent sources of information must be obtained experimentally. Based on high-resolution scanning transmission electron microscopy (STEM) images taken with a high-angle annular dark-field (HAADF) detector the strain state of the InGaNAs quantum well is determined as well as its characteristic HAADF-scattering intensity. The strain state is evaluated by applying elasticity theory and the HAADF intensity is used for a comparison with multislice simulations. The combination of both allows for determination of the chemical composition where the results are in accordance with X-ray diffraction measurements, three-dimensional atom probe tomography, and further transmission electron microscopy analysis. The HAADF-STEM evaluation was used to investigate the influence of As-stabilized annealing on the InGaNAs/GaAs sample. Photoluminescence measurements show an annealing-induced blue shift of the emission wavelength. The chemical analysis precludes an elemental diffusion as origin of the energy shift--instead the results are in agreement with a model based on an annealing-induced redistribution of the atomic next-neighbor configuration.

A critical study: Assessment of the effect of silica particles from 15 to 500 nm on bacterial viability

The current opinion on the toxicity of nanomaterials converges on a size-dependent phenomenon showing increasing toxicity with decreasing particle sizes. We demonstrate that SiO2 particles have no or only a mild effect on the viability of five bacterial strains, independently from the particle size. A two-hour exposure to 20 mg L(-1) of 15, 50 and 500 nm sized SiO2 particles neither alters bacterial adenosine triphosphate (ATP) levels nor reduces the number of colony forming units (CFU). Additionally, we tested the effect of Al2O3-coated LUDOX-CL (ACS 20) with a primary particle size of 20 nm. In contrast, these particles caused a significant reduction of ATP levels and CFU. Fluorescence microscopy revealed that ACS 20 induced a pronounced agglomeration of the bacteria, which led to underestimated counts in regard of CFU. Bactericide effects as indicated by decreased ATP levels can be explained by bactericide additives that are present in the ACS 20 suspension.