Tian-Yue Chen

A high efficient 820 nm MOS Ge quantum dot photodetector

A Ge quantum dot photodetector has been demonstrated using a metal-oxide-semiconductor (MOS) tunneling structure. The oxide film was grown by liquid phase deposition (LPD) at 50/spl deg/C. The photodetector with five-period Ge quantum dot has responsivity of 130, 0.16, and 0.08 mA/W at wavelengths of 820 nm, 1300 nm, and 1550 nm, respectively. The device with 20-period Ge quantum dot shows responsivity of 600 mA/W at the wavelength of 850 nm. The room temperature dark current density is as low as 0.06 mA/cm/sup 2/. The high performance of the photodetectors at 820 nm makes it feasible to integrate electrooptical devices into Si chips for short-range optical communication.

Light emission from Al/HfO2/silicon diodes

The metal–insulator–silicon light-emitting diode (MIS LED) using a high-dielectric-constant material (HfO2) is studied. The external quantum efficiency for light emission at room temperature from the MIS LED was observed to be 2.0×10−6, as compared to 0.5×10−6 for the metal–oxide–silicon (MOS) LED. The large hole concentration at the Si/HfO2 interface created by the high dielectric constant of HfO2 may be responsible for the enhancement. The emission line shape of the MIS LED can be fitted by the electron-hole plasma recombination model, similar to the MOS LED. The Al/HfO2/silicon LED with a high interface trap density has a continuous spectrum below the Si gap beside the electron-hole plasma emission, probably due to the radiative recombination between the electrons and holes via the interface states.

Tunable spin-orbit torque in Cu-Ta binary alloy heterostructures

The spin-Hall effect (SHE) is found to be strong in heavy transition metals, such as Ta and W, in their amorphous and/or high resistivity form. In this paper, we show that by employing a Cu-Ta binary alloy as a buffer layer in an amorphous

Spin-orbit torque magnetometry by wide-field magneto-optical Kerr effect

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Comparative study on spin-orbit torque efficiencies from W/ferromagnetic and W/ferrimagnetic heterostructures

-based magnetic heterostructure with perpendicular magnetic anisotropy, the SHE-induced dampinglike spin-orbit torque (DL-SOT) efficiency

Spin-Orbit Torque from a Magnetic Heterostructure of High-Entropy Alloy

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Hydrogen Assisted Tempered Martensite Embrittlement of Ultra High Strength Martensitic Steel

can be tuned linearly by adjusting the buffer layer resistivity. Current-induced SOT switching can also be achieved in these

Electrical and optical reliability improvement of HfO/sub 2/ gate dielectric by deuterium and hydrogen incorporation

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Current-Induced Spin-Orbit Torque and Field-Free Switching in Mo-Based Magnetic Heterostructures

-based magnetic heterostructures, and we find the switching behavior better explained by a SOT-assisted domain-wall propagation picture. Through systematic studies on

Pulse-Width and Temperature Effect on the Switching Behavior of an Etch-Stop-on-MgO-Barrier Spin-Orbit Torque MRAM Cell

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