Tim Noakes

Proton-driven plasma wakefield acceleration: a path to the future of high-energy particle physics

New acceleration technology is mandatory for the future elucidation of fundamental particles and their interactions. A promising approach is to exploit the properties of plasmas. Past research has focused on creating large-amplitude plasma waves by injecting an intense laser pulse or an electron bunch into the plasma. However, the maximum energy gain of electrons accelerated in a single plasma stage is limited by the energy of the driver. Proton bunches are the most promising drivers of wakefields to accelerate electrons to the TeV energy scale in a single stage. An experimental program at CERN—the AWAKE experiment—has been launched to study in detail the important physical processes and to demonstrate the power of proton-driven plasma wakefield acceleration. Here we review the physical principles and some experimental considerations for a future proton-driven plasma wakefield accelerator.

High Depth Resolution Depth Profile Analysis of Ultra Thin High-κ Hf Based Films using MEIS Compared with XTEM, XRF, SE and XPS

Nanometre thin high-k hafnium oxide (HfO2) layers combined with a sub-nm SiO2 layers or Hf silicate have become Si compatible gate dielectrics. Medium energy ion scattering (MEIS) analysis has been applied to a range of such MOCVD grown HfO2/SiO2 and HfSiOx(60%Hf)/SiO2 gate oxide films of thickness between 1 and 2 nm on top of Si(100), before and after decoupled plasma nitridation (DPN). MEIS in combination with energy spectrum simulation provides quantitative layer information with sub-nm resolution on these layer structures and their atomic composition that is in excellent agreement with a) the as grown layer parameters and b) results obtained from techniques, such as SE, XPS, XRF and XTEM. MEIS analysis of a metal gate, high-k TiN/Al2O3/HfO2/SiO2/Si stack shows the interdiffusion, after thermal treatment, of Hf and Al from the caplayer, which was inserted to modify the metal gate work function.

Beam Characterisation and Machine Developments at VELA

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A superlattice approach to the synthesis of ferroelectric Strontium Bismuth Tantalate thin films using liquid-injection-MOCVD

The synthesis of SrBi2Ta2O9 (SBT) thin films has been investigated using a superlattice approach. Thin films were deposited on silicon by independent injection of each source to produce Bi2O3/SrTa2O6 superlattices. The effects of post-deposition annealing have been investigated using high-resolution TEM and medium energy ion scattering (MEIS) to depth profile the superlattices. X-ray diffraction has also been used to characterize the conversion of the superlattices from distinct layers of Bi2O3 and SrTa2O6 into a polycrystalline layer of strontium bismuth tantalate.