Timothy J. Karle

Electronic properties and metrology applications of the diamond NV- center under pressure.

The negatively charged nitrogen-vacancy (NV-) center in diamond has realized new frontiers in quantum technology. Here, the optical and spin resonances of the NV- center are observed under hydrostatic pressures up to 60xa0GPa. Our results motivate powerful new techniques to measure pressure and image high-pressure magnetic and electric phenomena. Additionally, molecular orbital analysis and semiclassical calculations provide insight into the effects of compression on the electronic orbitals of the NV- center.

Single-photon emitting diode in silicon carbide

Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide an ideal material to build such devices. Here, we demonstrate the fabrication of bright single-photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of >300u2009kHz) and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single-photon source is proposed. These results provide a foundation for the large scale integration of single-photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing.

Near-surface spectrally stable nitrogen vacancy centres engineered in single crystal diamond.

A method for engineering thin (<100 nm) layers of homoepitaxial diamond containing high quality, spectrally stable, isolated nitrogen-vacancy (NV) centres is reported. The photoluminescence excitation linewidth of the engineered NVs are as low as 140 MHz, at temperatures below 12 K, while the spin properties are at a level suitable for quantum memory and spin register applications. This methodology of NV fabrication is an important step toward scalable and practical diamond based photonic devices suitable for quantum information processing.

Development of a Templated Approach to Fabricate Diamond Patterns on Various Substrates

We demonstrate a robust templated approach to pattern thin films of chemical vapor deposited nanocrystalline diamond grown from monodispersed nanodiamond (mdND) seeds. The method works on a range of substrates, and we herein demonstrate the method using silicon, aluminum nitride (AlN), and sapphire substrates. Patterns are defined using photo- and e-beam lithography, which are seeded with mdND colloids and subsequently introduced into microwave assisted chemical vapor deposition reactor to grow patterned nanocrystalline diamond films. In this study, we investigate various factors that affect the selective seeding of different substrates to create high quality diamond thin films, including mdND surface termination, zeta potential, surface treatment, and plasma cleaning. Although the electrostatic interaction between mdND colloids and substrates is the main process driving adherence, we found that chemical reaction (esterification) or hydrogen bonding can potentially dominate the seeding process. Leveraging the knowledge on these different interactions, we optimize fabrication protocols to eliminate unwanted diamond nucleation outside the patterned areas. Furthermore, we have achieved the deposition of patterned diamond films and arrays over a range of feature sizes. This study contributes to a comprehensive understanding of the mdND-substrate interaction that will enable the fabrication of integrated nanocrystalline diamond thin films for microelectronics, sensors, and tissue culturing applications.

Depletion of nitrogen‐vacancy color centers in diamond via hydrogen passivation

We show reduction in the emission from nitrogen‐vacancy (NV) centers in single crystal diamond due to exposure to hydrogen plasmas ranging from 700u2009°C to 1000u2009°C. Significant fluorescence reduction was observed beneath the exposed surface to 80u2009μm depth after ∼10u2009min and did not recover after post‐annealing in vacuum for 7u2009h at 1100u2009°C. We attribute the fluorescence reduction to the formation of nitrogen‐vacancy‐hydrogen centers by the plasma‐induced diffusion of hydrogen. These results have important implications for the formation of NV centers for quantum applications, whilst also providing experimental evidence of long range hydrogen diffusion through intrinsic high‐purity diamond.

Lifetime Reduction and Enhanced Emission of Single Photon Color Centers in Nanodiamond via Surrounding Refractive Index Modification

The negatively-charged nitrogen vacancy (NV−) center in diamond is of great interest for quantum information processing and quantum key distribution applications due to its highly desirable long coherence times at room temperature. One of the challenges for their use in these applications involves the requirement to further optimize the lifetime and emission properties of the centers. Our results demonstrate the reduction of the lifetime of NV− centers, and hence an increase in the emission rate, achieved by modifying the refractive index of the environment surrounding the nanodiamond (ND). By coating the NDs in a polymer film, experimental results and numerical calculations show an average of 63% reduction in the lifetime and an average enhancement in the emission rate by a factor of 1.6. This strategy is also applicable for emitters other than diamond color centers where the particle refractive index is greater than the refractive index of the surrounding media.

Broadband and robust optical waveguide devices using coherent tunnelling adiabatic passage

We numerically demonstrate an optical waveguide structure for the coherent tunnelling adiabatic passage of photons. An alternative coupling scheme is used compared to earlier work. We show that a three rib optical waveguide structure is robust to material loss in the intermediate waveguide and variations to the waveguide parameters. We also present a five rib optical waveguide structure that represents a new class of octave spanning power divider.

Uniformity of the lasing wavelength of heterogeneously integrated InP microdisk lasers on SOI.

We report a high lasing wavelength uniformity of optically pumped InP-based microdisk lasers processed with electron-beam lithography, heterogeneously integrated with adhesive bonding on silicon-on-insulator (SOI) waveguide circuits and evanescently coupled to an underlying waveguide. We study the continuous wave laser emission coupling out of the SOI via a grating coupler etched at one side of the waveguide, and demonstrate a standard deviation in lasing wavelength of nominally identical devices on the same chip lower than 500 pm. The deviation in the diameter of the microdisks as low as a few nanometers makes all-optical signal processing applications requiring cascadability possible.

Nanodiamond induced high-Q resonances in defect-free photonic crystal slabs

We demonstrate that a high-Q photonic crystal cavity can be induced by the presence of a nanodiamond (ND) on the air-hole side wall in an otherwise defect-free photonic crystal. The ND itself acts as the perturbation, increasing the average refractive index, necessary to define the cavity; therefore self-aligned with the cavity. Such cavities are potentially useful for exploiting cavity quantum electro-dynamic interactions between fluorescent NDs and the cavity. A single ND can induce a cavity with Q~3 × 10(4) and two or more ND particles can induce a cavity with Q~1.5 × 10(5). We show numerically that perturbing the position and the size of the NDs has little effect on the cavity properties.

Very bright, near-infrared single photon emitters in diamond

We demonstrate activation of bright diamond single photon emitters in the near infrared range by thermal annealing alone, i.e., without ion implantation. The activation is crucially dependent on the annealing ambient. The activation of the single photon emitters is only observed when the sample is annealed in forming gas (4% H2 in Ar) above temperatures of 1000u2009°C. By contrast, no emitters are activated by annealing in vacuum, oxygen, argon or deuterium. The emitters activated by annealing in forming gas exhibit very bright emission in the 730-760 nm wavelength range and have linewidths of ∼1.5-2.5 nm at room temperature.