Ting-Hsiang Huang

A novel integrated process for polymer photovoltaic micro-power cell and polymer thin film transistors on flexible substrate

Flexible optoelectronic has attracted many interesting for its wide application in flat panel display, sensors and logic circuits [1–2]. Among those applications, the polymer thin film transistor (PTFTs) is one of the key devices responsible for signal processing. A battery is a general power provider for flexible optoelectronics. However, for some niche applications, such as ultra-potable optoelectronics, multi-discrepancy sensors, electronic signage display or in vivo bio-systems, a supplementary or a permanent micro-power source is necessary to reduce weight, extend working time and keep the function working well. An integrated polymer photovoltaic (PPV) is a good micro-power candidate. In this work, a novel integration process for PTFTs and PPV with the same layer structure is demonstrated. The schematic structure for the integrated PTFTs and PPV was shown in Fig.1.

Extraction of Carrier Concentration and Mobility of Heavily Doped Poly-Si Nanowires with Junctionless (JL) Transistor Structures

Junctionless (JL) Transistor Structures Zer-Ming Lin, Horng-Chih Lin, and Tiao-Yuan Huang a Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, No. 1001, Ta Hsueh Rd., Hsinchu, Taiwan 300, R.O.C. National Nano Device Laboratories, No. 26, Prosperity Rd. I, Science-Based Industrial Park, Hsinchu, Taiwan 30078, R.O.C. Phone: +886-3-571-2121 ext. 54193, Fax: +886-3-572-4361, E-mail: hclin@faculty.nctu.edu.tw

Modeling Subthreshold Current and Threshold Voltage of Fully-Depleted Double-gate Junctionless(J-less) Transistors

Junctionless(J-less) Transistors Zer-Ming Lin, Horng-Chih Lin*, Keng-Ming Liu, and Tiao-Yuan Huang Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 300 Taiwan National Nano Device Labs., Hsinchu 300, Taiwan Department of Electrical Engineering, National Dong Hwa University, Hualien 974-01, Taiwan *Phone:+886-3-571-2121 ext. 54193, Fax:+886-3-572-4361, E-mail: hclin@faculty.nctu.edu.tw

P‐101: A Coating Process Enable Block Copolymer Dielectric for Low Voltage Organic Thin Film Transistor

In this work, a sub-10nm random copolymer dielectric for low voltage organic thin film transistor is demonstrated. This polymer dielectric is compatible with existing printing technology such as ink-jet, slot coating, gravure, offset, screen and many other printing methods. No matter how thick of original layer, it comes to sub-10nm based on the intrinsic properties of the colpolymer. A random copolymer, poly(styrene-comethyl- methacrylate) (PS-r-PMMA) was used for this method. The pentacene organic thin-film transistors (OTFTs) on the Al gate exhibit 5V operation voltage based on this polymer. The mobility of 0.05 cm2V−1s−1, threshold voltage of −2.5V, sub-threshold swing of 0.27 V/dec were achieved.

Extensive Leakage Current Reduction in Polymer Dielectric Thin Film by Metal Nanoparticles Incorporation for Organic Thin Film Transistor

A polymer incarcerated gold nanoparticles has been prepared and successfully applied as an insulator to reduce the leakage current. The effect of size of gold nanoparticles on leakage current was also investigated. This stable organic insulator performed a good dielectric strength. Leakage current density was depressed to 10-7 A/cm2 in high electric field of 2 MV/cm by incorporated with 10 nm gold nanoparticles. Moreover, both charging energy theory and space-charge-limited current model were proposed to explain the extensive leakage current reduction phenomenon.

A novel nanowire array structure for photocurrent enhancement in amorphous silicon solar cell

Global warming and energy shortage are mankinds greatest challenge in the recent years. The solution to this urgent crisis lies in replacing fossil fuel with renewable energy. One of the most attractive types of renewable energy is solar cell technology, and it is already being deployed around the world. Among many type of solar cells, thin film amorphous silicon (a-Si) solar cell is one of the candidate to achieve low cost requirement. In thin film a-Si solar cell, large amount gap states limit the use of thick film to absorb most of incident light that limit the efficiency. A novel cell structure in order to separate the way of light absorption and carrier transport was discussed in this work. Brendan et. al. first suggest this principle and simulate the electrical properties of planar and radial p-n nanorod solar cell with different materials like Si and GaAs. However, for a-Si solar cell, a built-in electrical that cause drift force for carriers was not involved in their work. In this work, the thin film solar cell with amorphous silicon p-i-n layers grown on ZnO: Al nanowire array was simulated. In this simulation, the diameter of the nanowire as small as 10 nm was used to fully utilize the advantage of nanowire structure. The physical models such as Poisson equation, drift-diffusion current equation and continuity equation are used. In addition to those physical equations, some parameters that associated to amorphous silicon are also used to construct the simulation environment in a commercial TCAD software.