Ting Tian

Emitter ballasting resistor design of InGaP/GaAs power HBT for high linearity based on Volterra Series distortion analysis

Abstract A distortion analysis of InGaP/GaAs HBT is presented based on Volterra Series. The interdependence between emitter ballasting resistor and linearity has been quantitatively analyzed. An optimized emitter ballasted power amplifier (PA) is designed and fabricated. Third-order intermodulation (IM3) of the PA is suppressed by 3–8u202fdB without sacrificing power gain and PAE. The theoretical calculation and measurement results show the optimization of emitter ballasting resistor is an alternative technique to improve PAs linearity.

A wide-band monolithic differential power amplifier

A differential PA (power amplifier) with a novel structure is introduced in this paper. This PA is constructed with single ended input and balanced output. It is fabricated in 2 μm InGaP/GaAs HBT technology. The small-signal bandwidth of this PA covers from 1.5GHz to 2.7GHz. 34 dBm P−1dB (1 dB gain-compression power) and 45% PAE (power added efficiency) is achieved at 2.1GHz. Moreover, the quiescent power dissipation is 400mW with 12V supply.