Tom Baehr-Jones

Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm

A silicon traveling-wave Mach-Zehnder modulator near 1300 nm is demonstrated to operate at 50 Gb/s with a differential 2 Vpp signal at 0 V reverse bias, achieving a 800 fJ/bit power consumption.

Ultralow loss single layer submicron silicon waveguide crossing for SOI optical interconnect

We demonstrate compact, broadband, ultralow loss silicon waveguide crossings operating at 1550 nm and 1310 nm. Cross-wafer measurement of 30 dies shows transmission insertion loss of - 0.028 ± 0.009 dB for the 1550 nm device and - 0.017 ± 0.005 dB for the 1310 nm device. Both crossings show crosstalk lower than - 37 dB. The devices were fabricated in a CMOS-compatible process using 248 nm optical lithography with a single etch step.

Silicon Photonics: The Next Fabless Semiconductor Industry

Something very surprising has been happening in photonics recently: the same foundries and processes that were developed to build transistors are being repurposed to build chips that can generate, detect, modulate, and otherwise manipulate light. This is pretty counterintuitive, since the electronics industry spends billions of dollars to develop tools, processes, and facilities that lend themselves to building the very best transistors without any thought about how to make these processes compatible with photonics (with the obvious exception of the processes designed to make CMOS and CCD camera chips).

The Road to Affordable, Large-Scale Silicon Photonics

Large-scale optical systems in silicon can become a reality by building upon the existing infrastructure. Due to the shifting economics of silicon photonics, some cost-effective fabless silicon products may even emerge over the next several years.

Silicon photonic grating-assisted, contra-directional couplers.

We demonstrate, in both theory and experiment, 4-port, electrically tunable photonic filters using silicon contra-directional couplers (contra-DCs) with uniform and phase-shifted waveguide Bragg gratings. Numerical analysis, including both intra- and inter-waveguide couplings, is performed using coupled-mode theory and the transfer-matrix method. The contra-DC devices were fabricated by a CMOS-photonics manufacturing foundry and are electrically tunable using free-carrier injection. A 4-port, grating-based photonic resonator has been obtained using the phase-shifted contra-DC, showing a resonant peak with a 3-dB bandwidth of 0.2 nm and an extinction ratio of 24 dB. These contra-DC devices enable on-chip integration of Bragg-grating-defined functions without using circulators and have great potential for applications such as wavelength-division multiplexing networks and optical signal processing.

Highly linear silicon traveling wave Mach-Zehnder carrier depletion modulator based on differential drive

We present measurements of the nonlinear distortions of a traveling-wave silicon Mach-Zehnder modulator based on the carrier depletion effect. Spurious free dynamic range for second harmonic distortion of 82 dB·Hz(1/2) is seen, and 97 dB·Hz(2/3) is measured for intermodulation distortion. This measurement represents an improvement of 20 dB over the previous best result in silicon. We also show that the linearity of a silicon traveling wave Mach-Zehnder modulator can be improved by differentially driving it. These results suggest silicon may be a suitable platform for analog optical applications.

CMOS-compatible highly efficient polarization splitter and rotator based on a double-etched directional coupler

We present a highly efficient polarization splitter and rotator (PSR), fabricated using 248 nm deep ultraviolet lithography on a silicon-on-insulator substrate. The PSR is based on a double-etched directional coupler with a length of 27 µm. The fabricated PSR yields a TM-to-TE conversion loss better than 0.5 dB and TE insertion loss better than 0.3 dB, with an ultra-low crosstalk (-20 dB) in the wavelength regime 1540-1570 nm.

A CMOS-Compatible, Low-Loss, and Low-Crosstalk Silicon Waveguide Crossing

We demonstrated a waveguide crossing for submicron silicon waveguides with average insertion loss of 0.18±0.03 dB and crosstalk of -41±2 dB, uniform across an 8-inch wafer. The device was fabricated in a CMOS-compatible process using 248 nm lithography, with only one patterning step.

A single adiabatic microring-based laser in 220 nm silicon-on-insulator

We demonstrate a laser for the silicon photonics platform by hybrid integration with a III/V reflective semiconductor optical amplifier coupled to a 220 nm silicon-on-insulator half-cavity. We utilize a novel ultra-thin silicon edge coupler. A single adiabatic microring based inline reflector is used to select a lasing mode, as compared to the multiple rings and Bragg gratings used in many previous results. Despite the simplified design, the laser was measured to have on-chip 9.8 mW power, less than 220 KHz linewidth, over 45 dB side mode suppression ratio, less than -135 dB/Hz relative intensity noise, and 2.7% wall plug efficiency.

A Compact Low-Power 320-Gb/s WDM Transmitter Based on Silicon Microrings

We demonstrate a compact and low-power wavelength-division multiplexing transmitter near a 1550-nm wavelength using silicon microrings. The transmitter is implemented on a silicon-on-insulator photonics platform with a compact footprint of 0.5 mm2. The transmitter incorporates 8 wavelength channels with 200-GHz spacing. Each channel achieved error-free operation at 40 Gb/s, resulting in an aggregated data transmission capability of 320 Gb/s. To our knowledge, this is the highest aggregated data rate demonstrated in silicon wavelength-division multiplexing transmitters. Owing to the small device capacitance and the efficient pn-junction modulator design, the transmitter achieves low energy-per-bit values of 36 fJ/bit under 2.4 Vpp drive and 144 fJ/bit under 4.8 Vpp drive. Comparisons are made to a commercial lithium niobate modulator in terms of bit-error-rate versus optical signal-to-noise ratio.