Yisu Yang

Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm

A silicon traveling-wave Mach-Zehnder modulator near 1300 nm is demonstrated to operate at 50 Gb/s with a differential 2 Vpp signal at 0 V reverse bias, achieving a 800 fJ/bit power consumption.

Germanium photodetector with 60 GHz bandwidth using inductive gain peaking

Germanium-on-silicon photodetectors have been heavily investigated in recent years as a key component of CMOS-compatible integrated photonics platforms. It has previously been shown that detector bandwidths could theoretically be greatly increased with the incorporation of a carefully chosen inductor and capacitor in the photodetector circuit. Here, we show the experimental results of such a circuit that doubles the detector 3dB bandwidth to 60 GHz. These results suggest that gain peaking is a generally applicable tool for increasing detector bandwidth in practical photonics systems without requiring the difficult process of lowering detector capacitance.

High-Speed Silicon Modulator With Slow-Wave Electrodes and Fully Independent Differential Drive

We demonstrate a fully independent differential-drive capable of traveling-wave modulator in silicon using slow-wave transmission line electrode. The reported 3.5-mm device achieves a bandwidth of 27 GHz at -1 V bias with 7.8-V small signal Vπ and 50-Ω impedance. Raising the impedance to this extent requires effectively expanding the RF mode size and radically changes the RF phase velocity, but we show that this can be done with minimal crosstalk effects between the two arms and overall velocity mismatch, and thus, with a high EO bandwidth achieved. 40-Gb/s operation is demonstrated with 1.6-Vpp differential-drive, and performance comparisons to Lithium Niobate modulators are made.

A Compact Low-Power 320-Gb/s WDM Transmitter Based on Silicon Microrings

We demonstrate a compact and low-power wavelength-division multiplexing transmitter near a 1550-nm wavelength using silicon microrings. The transmitter is implemented on a silicon-on-insulator photonics platform with a compact footprint of 0.5 mm2. The transmitter incorporates 8 wavelength channels with 200-GHz spacing. Each channel achieved error-free operation at 40 Gb/s, resulting in an aggregated data transmission capability of 320 Gb/s. To our knowledge, this is the highest aggregated data rate demonstrated in silicon wavelength-division multiplexing transmitters. Owing to the small device capacitance and the efficient pn-junction modulator design, the transmitter achieves low energy-per-bit values of 36 fJ/bit under 2.4 Vpp drive and 144 fJ/bit under 4.8 Vpp drive. Comparisons are made to a commercial lithium niobate modulator in terms of bit-error-rate versus optical signal-to-noise ratio.

A high-responsivity photodetector absent metal-germanium direct contact

We report a Ge-on-Si photodetector without doped Ge or Ge-metal contacts. Despite the simplified fabrication process, the device shows a responsivity of 1.14 A/W at -4 V reverse bias and 1.44 A/W at -12V, at 1550 nm wavelength. Dark current is less than 1µA under both bias conditions. We also demonstrate open eye diagrams at 40Gb/s.

A CMOS-compatible silicon photonic platform for high-speed integrated opto-electronics

We have developed a CMOS-compatible Silicon-on-Insulator photonic platform featuring active components such as pi- n and photoconductive (MIM) Ge-on-Si detectors, p-i-n ring and Mach-Zehnder modulators, and traveling-wave modulators based on a p-n junction driven by an RF transmission line. We have characterized the yield and uniformity of the performance through automated cross-wafer testing, demonstrating that our process is reliable and scalable. The entire platform is capable of more than 40 GB/s data rate. Fabricated at the IME/A-STAR foundry in Singapore, it is available to the worldwide community through OpSIS, a successful multi-project wafer service based at the University of Delaware. After exposing the design, fabrication and performance of the most advanced platform components, we present our newest results obtained after the first public run. These include low loss passives (Y-junctions: 0.28 dB; waveguide crossings: 0.18 dB and cross-talk -41±2 dB; non-uniform grating couplers: 3.2±0.2 dB). All these components were tested across full 8” wafers and exhibited remarkable uniformity. The active devices were improved from the previous design kit to exhibit 3dB bandwidths ranging from 30 GHz (modulators) to 58 GHz (detectors). We also present new packaging services available to OpSIS users: vertical fiber coupling and edge coupling.

Silicon Mod-MUX-Ring transmitter with 4 channels at 40 Gb/s

We propose for the first time the Mod-MUX-Ring architecture for microring based WDM transmitter. A prototype Mod-MUX-Ring transmitter with 4 channels and 400 GHz channel spacing is demonstrated and fully characterized at 40 Gb/s channel rate. Under 2.7 V driving voltage, error-free (BER < 10(-12)) operation is achieved on all channels, with 3 dB extinction ratio. Performance comparisons to Lithium Niobate modulators are made.

Experimental demonstration of broadband Lorentz non-reciprocity in an integrable photonic architecture based on Mach-Zehnder modulators

Lorentz reciprocity is a direct consequence of Maxwell equations governing the propagation of light in passive linear media with symmetric permittivity and permeability tensors. Here, we demonstrate the first active optical isolator and circulator implemented in a linear and reciprocal material platform using commercial Mach-Zehnder modulators. In a proof-of-principle experiment based on single-mode polarization-maintaining fibers, we achieve more than 12.5 dB isolation over an unprecedented 8.7 THz bandwidth at telecommunication wavelengths, with only 9.1 dB total insertion loss. Our architecture provides a practical answer to the challenge of non-reciprocal light routing in photonic integrated circuits.

30GHz silicon platform for photonics system

We present a silicon photonic platform offering low loss passive components, integrated highspeed silicon traveling wave MZ modulators (30GHz), ring modulators (45GHz) and inductance peaking Germanium photodetectors (58GHz). The bandwidth of the photonic devices is sufficient to support 50Gb/s bit rate. Our platform is available to the community as part of the OpSIS project.

Tri-layer silicon nitride-on-silicon photonic platform for ultra-low-loss crossings and interlayer transitions

We present a three-layer silicon nitride on silicon platform for constructing very large photonic integrated circuits. Efficient interlayer transitions are enabled by the close spacing between adjacent layers, while ultra-low-loss crossings are enabled by the large spacing between the topmost and bottommost layers. We demonstrate interlayer taper transitions with losses < 0.15 dB for wavelengths spanning from 1480 nm to 1620 nm. Our overpass waveguide crossings exhibit insertion loss < 2.1 mdB and crosstalk below -56 dB in the wavelength range between 1480 nm and 1620 nm with losses as low as 0.28 mdB. Our platform architecture is suited to meet the demands of large-scale photonic circuits which contain hundreds of crossings.