Tomoo Yanase

Double heterostructure optoelectronic switch as a dynamic memory with low‐power consumption

A pnn double heterostructure optoelectronic switch with dual extractor electrodes was dynamically operated as an optical memory with the resulting achievement of 20 μW holding power. This value represents a reduction in holding power of about three orders of magnitude as compared to that of conventional light‐emitting optical bistable devices. Complete operation, involving optical writing, regeneration, and high‐speed erasing of written data through a dual extractor‐electrodes configuration, was carried out with a simple driving scheme.

Vertical to surface transmission electrophotonic device with selectable output light channels

A photoeletronic bistable device with selectable light output channels has been fabricated for implementation in photonic switching and processing systems. The device is a variation of the vertical to surface transmission electrophotonic device. Output in the stimulated light emission mode was successfully obtained from different waveguide channels by external electronic switching. Output channels could be switched at a rate of 400 Mb/s. The potential versatility of this device has been experimentally confirmed in programmable or switchable optical interconnections.

High Speed Response in Optoelectronic Gated Thyristor

High speed response in a three terminal pnpn double heterostructure optoelectronic gated thyristor is demonstrated. The gate electrode on the active layer is operated to sweep out excess carriers in the active layer. The turn-off delay time has been measured to be 5 ns, which is two orders of magnitude improvement compared with that for the two terminal mode operation. Furthermore, it has been shown that the turn-off delay time cannot be estimated from the conventional 90-10% fall time.

VPE-Grown 1.3 µm InGaAsP/InP Double-Channel Planar Buried-Heterostructure Laser Diode with LPE-Burying Layers

Hydride-VPE grown 1.3 µm InGaAsP/InP double-channel planar buried-heterostructure laser diodes with LPE burying layers were fabricated. 19.5 mA CW threshold current, 47% external differential quantum efficiency, both at 25°C, 50 mW CW operation, high-temperature CW operation up to 120°C and threshold characteristic temperature T0 as high as 72 K, have been obtained.