Tomoyasu Taniyama

Electrically driven single-electron spin resonance in a slanting Zeeman field

The integration of a micrometre-sized magnet with a semiconductor device has enabled the individual manipulation of two single electron spins. This approach may provide a scalable route for quantum computing with electron spins confined in quantum dots.

AgNbO3: A lead-free material with large polarization and electromechanical response

Polarization measurements reveal that AgNbO3 has an extremely large polarization, which can reach a value of 52μC∕cm2 in polycrystals. Experiments also show that the large internal atom distortion in AgNbO3 is also strongly coupled to the electric field, indicating that high piezoelectric performance can be realized in AgNbO3 system. This finding opens the way to designing a new class of lead-free, high-performance piezoelectric materials based on AgNbO3.

Two-qubit gate of combined single-spin rotation and interdot spin exchange in a double quantum dot.

A crucial requirement for quantum-information processing is the realization of multiple-qubit quantum gates. Here, we demonstrate an electron spin-based all-electrical two-qubit gate consisting of single-spin rotations and interdot spin exchange in a double quantum dot. A partially entangled output state is obtained by the application of the two-qubit gate to an initial, uncorrelated state. We find that the degree of entanglement is controllable by the exchange operation time. The approach represents a key step towards the realization of universal multiple-qubit gates.

Effects of sodium on electrical properties in Cu2ZnSnS4 single crystal

We have studied the effect of sodium on the electrical properties of Cu2ZnSnS4 (CZTS) single crystal by using temperature dependence of Hall effect measurement. The sodium substitution on the cation site in CZTS is observed from the increasing of unit-cell size by powder X-ray diffraction. Sodium increases the effective hole concentration and makes the thermal activation energy smaller. The degree of compensation decreases with sodium incorporation, thus the hole mobility is enhanced. We revealed that sodium is important dopant in CZTS to control the electrical properties.

Ferromagnetism and electronic structures of nonstoichiometric Heusler-alloy Fe3-xMnxSi Epilayers grown on Ge(111).

For the study of ferromagnetic materials which are compatible with group-IV semiconductor spintronics, we demonstrate control of the ferromagnetic properties of Heusler-alloy Fe3-xMnxSi epitaxially grown on Ge(111) by tuning the Mn composition x. Interestingly, we obtain L2(1)-ordered structures even for nonstoichiometric atomic compositions. The Curie temperature of the epilayers with x approximately 0.6 exceeds 300 K. Theoretical calculations indicate that the electronic structures of the nonstoichiometric Fe3-xMnxSi alloys become half-metallic for 0.75 < or = x < or = 1.5. We discuss the possibility of room-temperature ferromagnetic Fe(3-x)Mn(x)Si/Ge epilayers with high spin polarization.

Magnetotransport study of temperature dependent magnetic anisotropy in a (Ga,Mn)As epilayer

The anisotropic magnetotransport properties of a (Ga,Mn)As epilayer and the magnetization switching are studied as a function of temperature. The magnetization switching field shows asymmetry for crystallographically equivalent [110] and [110] directions at 4 K, and the asymmetry is more significant at 40 K. The magnetization switching features clearly show that cubic magnetocrystalline anisotropy along 〈100〉, which is biased by a small uniaxial anisotropy along the [110] easy axis, is dominant at 4 K. On the other hand, the [110] uniaxial anisotropy competes with the cubic anisotropy and dominates the magnetization switching at 40 K. Accordingly, the magnetization reversal in the (Ga,Mn)As epilayer occurs via 90° and 180° domain-wall displacement at 4 and 40 K, respectively. A mechanism of the change in the magnetic anisotropy is discussed within a theoretical description of the hole band structure.

Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal

Temperature dependent Hall effect measurements from 20 to 300 K have been performed on the quaternary compounds Cu2ZnSnS4 (CZTS) single crystals. The conductivity mechanisms can be described by a two-path system using Mott variable range hopping and typical thermal activation conduction. The center level of the acceptor band is 132 meV above the valence band maximum and is of width 40 meV. A correlation between the activation energy and acceptor concentration in CZTS is observed.

Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

The authors have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.

Manipulation of magnetic coercivity of Fe film in Fe/BaTiO3 heterostructure by electric field

The manipulation of magnetism at Fe/BaTiO3 interfaces is demonstrated via lattice distortion induced by thermal and electrical means. We find that the magnetic coercivity shows similar electric field dependence for positive and negative electric fields in the tetragonal phase of BaTiO3, whereas those in the orthorhombic and rhombohedral phases vary asymmetrically with respect to the polarity. The temperature dependent magnetization also reveals that the effect has its origin in the strong magnetoelastic coupling at the interface. The underlying mechanisms of the electric field dependence of the coercivity are discussed, associated with the different ferroelectric poling processes of BaTiO3.

Size dependence of martensite transformation temperature in ferromagnetic shape memory alloy FePd

Martensite transformation temperature of ferromagnetic shape memory alloy FePd was studied in the shape of nanoparticle and the polycrystalline samples with grain size in micrometers based on the x-ray diffraction and magnetic measurement as a function of sample size. Both the forward transformation start temperature Ms and reverse transformation finish temperature Af of polycrystalline sample monotonically decreased with decreasing grain size and were not observed in the nanoparticles. The size dependence of transformation temperature is explained based on the change in transformation mode, i.e., the decrease in sample size induces the change from the multivariant mode to single variant mode in which the strain energy is large. In the small sample, the strain energy becomes large, and thus the large driving force is required for the transformation. As a result, the large amount of undercooling occurs, which leads to the lowering of Ms. The measurement of heat capacity indicates that the strain energy is ...