K. Hamaya

Magnetotransport study of temperature dependent magnetic anisotropy in a (Ga,Mn)As epilayer

The anisotropic magnetotransport properties of a (Ga,Mn)As epilayer and the magnetization switching are studied as a function of temperature. The magnetization switching field shows asymmetry for crystallographically equivalent [110] and [110] directions at 4 K, and the asymmetry is more significant at 40 K. The magnetization switching features clearly show that cubic magnetocrystalline anisotropy along 〈100〉, which is biased by a small uniaxial anisotropy along the [110] easy axis, is dominant at 4 K. On the other hand, the [110] uniaxial anisotropy competes with the cubic anisotropy and dominates the magnetization switching at 40 K. Accordingly, the magnetization reversal in the (Ga,Mn)As epilayer occurs via 90° and 180° domain-wall displacement at 4 and 40 K, respectively. A mechanism of the change in the magnetic anisotropy is discussed within a theoretical description of the hole band structure.

Mixed magnetic phases in (Ga,Mn)As epilayers.

Two different ferromagnetic-paramagnetic transitions are detected in (Ga,Mn)As/GaAs(001) epilayers from ac susceptibility measurements: transition at a higher temperature results from (Ga,Mn)As cluster phases with [110] uniaxial anisotropy and that at a lower temperature is associated with a ferromagnetic (Ga,Mn)As matrix with 100 cubic anisotropy. A change in the magnetic easy axis from [100] to [110] with increasing temperature can be explained by the reduced contribution of 100 cubic anisotropy to the magnetic properties above the transition temperature of the (Ga,Mn)As matrix.

Magnetic anisotropy switching in(Ga,Mn)Aswith increasing hole concentration

We study a possible mechanism of the switching of the magnetic easy axis as a function of hole concentration in (Ga,Mn)As epilayers. In-plane uniaxial magnetic anisotropy along [110] is found to exceed intrinsic cubic magnetocrystalline anisotropy above a hole concentration of p = 1.5 * 10^21 cm^-3 at 4 K. This anisotropy switching can also be realized by post-growth annealing, and the temperature-dependent ac susceptibility is significantly changed with increasing annealing time. On the basis of our recent scenario [Phys. Rev. Lett. 94, 147203 (2005); Phys. Rev. B 73, 155204 (2006).], we deduce that the growth of highly hole-concentrated cluster regions with [110] uniaxial anisotropy is likely the predominant cause of the enhancement in [110] uniaxial anisotropy at the high hole concentration regime. We can clearly rule out anisotropic lattice strain as a possible origin of the switching of the magnetic anisotropy.

Current-Induced Magnetization Reversal in a (Ga,Mn)As-Based Magnetic Tunnel Junction

We report current-induced magnetization reversal in a ferromagnetic semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared by molecular beam epitaxy on a p-GaAs(001) substrate. A change in magneto-resistance that is asymmetric with respect to the current direction is found with the excitation current of 106 A/cm2. Contributions of both unpolarized and spin-polarized components are examined, and we conclude that the partial magnetization reversal occurs in the (Ga,Mn)As layer of smaller magnetization with the spin-polarized tunneling current of 105 A/cm2.

Dynamic relaxation of magnetic clusters in a ferromagnetic ( Ga , Mn ) As epilayer

A scenario of the mechanism of intriguing ferromagnetic properties in Mn-doped magnetic semiconductor

Control of magnetic anisotropy and magnetotransport in epitaxial micropatterned (Ga,Mn)As wire structures

(mathrm{Ga},mathrm{Mn})mathrm{As}

Effect of Ga+ irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers

is examined in detail. We find that magnetic features seen in zero-field-cooled and field-cooled magnetizations are not interpreted with a single domain model [Phys. Rev. Lett. 95, 217204 (2005)], and the magnetic relaxation, which is similar to that seen in magnetic particles and granular systems, is becoming significant at temperatures above the lower-temperature peak in the temperature dependence of ac susceptibility, supporting the cluster/matrix model reported in our previous work [Phys. Rev. Lett. 94, 147203 (2005)]. Cole-Cole analysis reveals that magnetic interactions between such

Correlation between ferromagnetism and hole localization in very thin (Ga,Mn)As epilayers

(mathrm{Ga},mathrm{Mn})mathrm{As}

Anisotropic magnetotransport due to uniaxial magnetic anisotropy in (Ga,Mn)As wires

clusters are significant at temperatures below the higher-temperature peak in the temperature dependent ac susceptibility. The magnetizations of these films disappear above the temperature showing the higher-temperature peak, which is generally referred to as the Curie temperature. However, we suggest that these combined results are evidence that the temperature is actually the blocking temperature of

Anomalous Hall resistivity due to grain boundary in manganite thin films

(mathrm{Ga},mathrm{Mn})mathrm{As}