Tomoyuki Nagai

Oscillatory Electrodeposition of Metal Films at Liquid/Liquid Interfaces Induced by the Large Surface Energy of Growing Deposits

Electrodeposition of zinc (Zn) at an aqueous ZnSO4/n-butylacetate (BuAc) interface (liquid/liquid (LL) interface) showed a potential oscillation in the region of the current density exceeding the diffusion-limited one, accompanied by formation of two-dimensional Zn film with a concentric pattern at the LL interface. In-situ optical microscopic inspections revealed that the oscillatory growth of the Zn film synchronized with meniscus oscillation of the LL interface. The vigorous growth of the deposits occurs only when the shape of the meniscus becomes hollow on the negative potential side of the potential oscillation. On the other hand, on the positive side, the meniscus becomes almost flat and the deposits formed in the preceding stage are thickened. A mechanism is proposed to explain the oscillatory Zn electrodeposition coupled with the meniscus oscillation, on the basis of the fact that the interfacial tension at the growing metal/aqueous solution interface is extremely large.

Periodic and chaotic oscillations of the electrochemical potential of p-Si in contact with an aqueous (CuSO4+HF) solution, caused by electroless Cu deposition

Periodic and chaotic oscillations were observed for the potential of p-type Si(111) immersed in an aqueous (HF+CuSO(4)) solution, accompanied by electroless Cu deposition on p-Si. They were, to our knowledge, the first examples of open-circuit potential oscillations observed for semiconductor electrodes. The oscillations appeared only when the Cu deposit formed a continuous porous film composed of mutually connected submicrometer-sized particles. Besides, the Si surface was kept flat within the size less than 50 nm even after the prolonged oscillation for a few hours, though the Si surface should be etched considerably with HF for this time. A plausible model is proposed for the periodic oscillation, in which interestingly coupling of autocatalytic shift in the flat-band potential of Si (U(fb)) caused by the change in the coverage of the Si oxide and the connection and disconnection of the Cu film with the Si surface plays the key role. The appearance of the chaotic oscillation is also explained by taking into account an oscillation-coupled change in the HF or Cu(2+) concentration near the Si surface.