Tony G. Ivanov

Very low cost graded SiGe base bipolar transistors for a high performance modular BiCMOS process

We report a new super self-aligned graded SiGe base transistor that uses high energy implantation, rather than epitaxial growth, to form the sub-collector region. This new inexpensive process yields a device with f/sub T/ of 52 GHz and f/sub max/ of 70 GHz with the addition of only 4 lithography levels over our 0.25 /spl mu/m CMOS technology without any changes to the existing process steps. Also, we demonstrate 4:1 multiplexer and 1:4 demultiplexer circuits using this technology that show excellent performance at 10 Gbit/s.

Minimizing thermal resistance and collector-to-substrate capacitance in SiGe BiCMOS on SOI

We describe a low fabrication cost, high-performance implementation of SiGe BiCMOS on SOL The use of high-energy implant allows the simultaneous formation of the subcollector and an additional n-type region below the buried oxide. The combination of buried oxide layer and floating n-type region underneath results in a very low collector-to-substrate capacitance. We also show that this process option achieves a much lower thermal resistance than using SOI with deep trench isolation, both reducing cost and curbing self-heating effects.

A 50-GHz 0.25-/spl mu/m implanted-base high-energy implanted-collector complementary modular BiCMOS (HEICBiC) technology for low-power wireless communication VLSIs

A 0.25-/spl mu/m modular high-energy implanted complementary BiCMOS (HEICBiC) technology has been developed for wireless-communication VLSIs. The technology demonstrates a high f/sub T/=52 GHz and a high f/sub T/BV/sub CEO/=160 GHz-V for single-poly emitter NPN transistors and a high f/sub T/=10.7 GHz for implanted-emitter PNP transistors. It is one of the best results for single-poly BiCMOS/bipolar technologies without an epitaxial buried collector. In comparison with 0.25-/spl mu/m NMOS, HEICBiC shows lower power consumption and higher RF performance.

A low-cost modular SiGe BiCMOS technology and analog passives for high-performance RF and wide-band applications

We present a low-cost 0.25 /spl mu/m SiGe BiCMOS technology that is being manufactured in an 8-inch production line. The technology includes modules for super-self-aligned (SSA) SiGe transistors, poly resistors, metal-oxide-metal (MOM) capacitors and thick-metal inductors added to a CMOS core process without any change to the CMOS process. With the independently developed modules and a high-energy implanted collector buried layer, SiGe bipolar devices with a maximum f/sub T/ of 72 GHz and f/sub max/ of 116 GHz, and thick metal inductors with Q/spl ges/15 have been produced. Using this technology, IC chips fabricated have demonstrated essential optical network interface functions with 4:1 MUX and 1:4 DEMUX circuits operated at 10 Gb/s, and limiting amplifiers performing at 20 Gb/s.

A 0.16 /spl mu/m modular BiCMOS (COM2-BiCMOS) technology for RF communication ICs

A 0.16 /spl mu/m modular BiCMOS technology (COM2-BiCMOS) has been developed for radio-frequency communication ICs. The technology includes a low-cost, high-performance, single-poly NPN bipolar transistor with f/sub T/=45 GHz and BV/sub CEO/=4.0 V. With a f/sub T/BV/sub CEO/ product of 180 GHz-V, the bipolar transistor performance in COM2-BiCMOS is comparable to many double-poly Si or SiGe transistors without the additional process complexity and cost.

A 50-GHz 0.25-/spl mu/m high-energy implanted BiCMOS (HEIBiC) technology for Low-Power high-integration wireless-communication systems

A 0.25-/spl mu/m modular high-energy implanted BiCMOS (HEIBiC) technology has been developed for high-integration wireless-communication systems. It integrates an RF bipolar transistor into the CMOS process without disturbing the CMOS device characteristics. HEIBiC technology utilizes implantation to form the base, collector and CMOS tubs. This single-poly emitter npn transistor demonstrates an f/sub T/=52 GHz for 2.5 V devices and an f/sub T/BV/sub CEO/ product of 171 GHz-V for 3.3 V devices. The performance of HEIBiC technology is competitive with the best reported in the literature.