Toshikazu Inoue

SEMICONDUCTOR DEVICE HAVING A GROUP III-V EPITAXIAL SEMICONDUCTOR LAYER ON A SUBSTRATE

Semiconductor device having an epitaxial layer grown heteroepitaxially on an underlying substrate

Process for growing semiconductor layer on substrate

Semiconductor device having a buffer structure for eliminating defects from a semiconductor layer grown thereon

Method of forming compound semiconductor layer

Heterostructure semiconductor device

Converter and communication control method

Heterostruktur-Halbleiteranordnung Heterostructure semiconductor device

Halbleiterbauelement mit einer auf einem Substrat aufgewachsenen epitaxialen Schicht A semiconductor device with a grown epitaxial layer on a substrate

Halbleiteranordnung mit einem heteroepitaxialen Substrat A semiconductor device having a heteroepitaxial substrate