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Toshikazu Inoue

Fujitsu

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Publication

Featured researches published by Toshikazu Inoue.

Archive | 1991

SEMICONDUCTOR DEVICE HAVING A GROUP III-V EPITAXIAL SEMICONDUCTOR LAYER ON A SUBSTRATE

Takashi Eshita; Toshikazu Inoue

Archive | 1990

Semiconductor device having an epitaxial layer grown heteroepitaxially on an underlying substrate

Toshikazu Inoue; Takashi Eshita

Archive | 1991

Process for growing semiconductor layer on substrate

Toshikazu Inoue

Archive | 1991

Semiconductor device having a buffer structure for eliminating defects from a semiconductor layer grown thereon

Toshikazu Inoue

Archive | 1990

Method of forming compound semiconductor layer

Takashi Eshita; Toshikazu Inoue

Archive | 1991

Heterostructure semiconductor device

Takashi Eshita; Toshikazu Inoue

Archive | 2005

Converter and communication control method

Shinya Nakagaki; Toshikazu Inoue; Kazuya Kumazaki; Mineharu Hattori; Tetsuji Ichikawa; Nobuo Iguchi; Akio Morimoto; Michio Kusayanagi

Archive | 1991

Heterostruktur-Halbleiteranordnung Heterostructure semiconductor device

Takashi Eshita; Toshikazu Inoue

Archive | 1990

Halbleiterbauelement mit einer auf einem Substrat aufgewachsenen epitaxialen Schicht A semiconductor device with a grown epitaxial layer on a substrate

Toshikazu Inoue; Takashi Eshita

Archive | 1990

Halbleiteranordnung mit einem heteroepitaxialen Substrat A semiconductor device having a heteroepitaxial substrate

Takashi Eshita; Toshikazu Inoue; Kanetake Takasaki

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Takashi Eshita

Fujitsu

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Akio Morimoto

Fujitsu

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Kazuya Kumazaki

Fujitsu

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Michio Kusayanagi

Fujitsu

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Mineharu Hattori

Fujitsu

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Nobuo Iguchi

Fujitsu

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Shinya Nakagaki

Fujitsu

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Tetsuji Ichikawa

Fujitsu

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