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Featured researches published by Toshio Hamano.


international electronics manufacturing technology symposium | 1998

Electrical characterization of a 500 MHz frequency EBGA package

Toshio Hamano; Y. Ikemoto; A. Okada; K. Asada; M. Abe; Y. Kubota

We developed a 420-ball enhanced BGA (EBGA) package that can accommodate a 500 MHz ASIC with 15 W power consumption. This package uses a low voltage differential signal with 400 mV full amplitude and 240 ps risetime as its highest speed signal, and consists of 8 pairs of differential signals. Each pair is composed of 2 signals with an isometric length. Two pairs have an identical length and form a channel, i.e. a parallel transmission path. This package has a nonstub configuration using electroless nickel and gold plating. This package also has a short ground loop running on the sidewall of the cavity. A time domain waveform was used for simulation of the electrical characteristics of this package. Then, the time domain waveform in an actual package was measured at risetime of 120 and 240 ps. As a result, the simulated time domain waveform agreed well with the measurements. We confirmed that the electrical performance of this package allows accommodation of a 500 MHz ASIC, and can achieve parallel transmission in a 500 MHz system.


Archive | 1999

Apparatus for a vertically accumulable semiconductor device with external leads secured by a positioning mechanism

Tetsuya Fujisawa; Mitsutaka Sato; Seiichi Orimo; Kazuhiko Mitobe; Masaaki Seki; Masaki Waki; Toshio Hamano; Katsuhiro Hayashida; Yoshitsugu Katoh; Hiroshi Inoue


Archive | 2000

Semiconductor device having a plurality of semiconductor elements interconnected by a redistribution layer

Yoshitaka Aiba; Mitsutaka Sato; Toshio Hamano


Archive | 1999

Surface mount type semiconductor device and method of producing the same having an interposing layer electrically connecting the semiconductor chip with protrusion electrodes

Yoshitsugu Katoh; Mitsutaka Sato; Hiroshi Inoue; Seiichi Orimo; Akira Okada; Yoshihiro Kubota; Mitsuo Abe; Toshio Hamano; Yoshitaka Aiba; Tetsuya Fujisawa; Masaaki Seki; Noriaki Shiba


Archive | 2003

Semiconductor device having a heat spreader exposed from a seal resin

Sumikazu Hosoyamada; Yoshitsugu Kato; Mitsuo Abe; Kazuto Tsuji; Masaharu Minamizawa; Toshio Hamano; Toshiyuki Honda; Katsuro Hiraiwa; Masashi Takenaka


Archive | 1995

Process for manufacturing a packaged semiconductor having a divided leadframe stage

Kazuto Tsuji; Yoshiyuki Yoneda; Hideharu Sakoda; Michio Sono; Ichiro Yamaguchi; Toshio Hamano; Yoshihiro Kubota; Michio Hayakawa; Yoshihiko Ikemoto; Yukio Saigo; Naomi Miyaji


Archive | 1994

Semiconductor device and lead frame therefore

Kazuto Tsuji; Yoshiyuki Yoneda; Hideharu Sakoda; Michio Sono; Ichiro Yamaguchi; Toshio Hamano; Yoshihiro Kubota; Michio Hayakawa; Yoshihiko Ikemoto; Yukio Saigo; Naomi Miyaji


Archive | 1993

Semiconductor device having improved adhesive structure and method of producing same

Takeshi Takenaka; Toshio Hamano; Takekiyo Saito


Archive | 1984

Semiconductor device having soldered bond between base and cap thereof

Toshio Hamano; Kaoru Tachibana; Hideji Aoki


Archive | 1998

Semiconductor module including a plurality of semiconductor devices detachably

Mitsutaka Sato; Tetsuya Fujisawa; Shigeyuki Maruyama; Junichi Kasai; Toshimi Kawahara; Toshio Hamano; Yoshihiro Kubota; Mitsunada Osawa; Yoshiyuki Yoneda; Kazuto Tsuji; Hirohisa Matsuki

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