Toshiyuki Kobayashi
Hitachi
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Publication
Featured researches published by Toshiyuki Kobayashi.
international symposium on power semiconductor devices and ic s | 2001
Toshiyuki Kobayashi; H. Abe; Y. Niimura; T. Yamada; A. Kurosaki; T. Hosen; T. Fujihira
New technologies for non-superjunction high-voltage power MOSFETs have been developed and experimentally confirmed. R/sub ON//spl middot/A achieved are as low as 110% of the silicon limit and R/sub ON//spl middot/Q/sub GD/ achieved are only 50 to 60% of the best data found. Due to the drastic improvement of R/sub ON//spl middot/Q/sub GD/, the developed devices have improved the power conversion efficiency of a fly-back converter by several percent. The total cost over performance of the power conversion systems can be improved by utilizing the developed technologies.
Archive | 2005
Toru Koyama; Toshiyuki Kobayashi; Kenji Yamaga; Tomoichi Kamo; Kazutoshi Higashiyama
Archive | 2002
Tohru Koyama; Toshiyuki Kobayashi; Kenji Yamaga; Tomoichi Kamo; Kazutoshi Higashiyama
Archive | 2000
Kazuhisa Higashiyama; Yuichi Kamo; Toshiyuki Kobayashi; Toru Koyama; Masashi Yamaga; 友一 加茂; 小山 徹; 稔幸 小林; 賢史 山賀; 和寿 東山
Archive | 2002
Makoto Morishima; Tomoichi Kamo; Toshiyuki Kobayashi; Kenji Yamaga; Tohru Koyama
Archive | 2004
Toshiyuki Kobayashi; 稔幸 小林
Archive | 2007
Atsuhiko Onuma; Hidetoshi Honbou; Toshiyuki Kobayashi
Archive | 2006
Hidetoshi Honbou; Toshiyuki Kobayashi; Atsuhiko Onuma; 篤彦 大沼; 稔幸 小林; 英利 本棒
Archive | 2011
Toshiyuki Kobayashi; Kazushige Kohno
Archive | 2005
Hidetoshi Honbou; Toshiyuki Kobayashi; Shin Morishima; Satoru Nakanishi; Kenichiro Tada; Tadashi Yoshida; 悟 中西; 正 吉田; 健一郎 多田; 稔幸 小林; 英利 本棒; 森島 慎
