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Publication


Featured researches published by Tohru Koyama.


Archive | 1996

Apparatus for analyzing a failure in a semiconductor wafer and method thereof

Toshikazu Tsutsui; Tohru Koyama; Fumihito Ohta; Yasukazu Mukogawa; Masaaki Furuta; Yohji Mashiko


Archive | 1995

Scanning photoinduced current analyzer capable of detecting photoinduced current in nonbiased specimen

Tohru Koyama


Archive | 1991

Semiconductor device having a two layered structure gate electrode

Tohru Koyama; Katsuhiko Tamura; Yasuna Nakamura; Yoshiko Kokawa; Kenji Kusakabe


Archive | 1996

Method of analyzing failure of semiconductor device by using emission microscope and system for analyzing failure of semiconductor device

Tohru Koyama


Archive | 1998

System for analyzing a failure in a semiconductor wafer by calculating correlation coefficient between collated data of defects per prescribed unit and failures per prescribed unit

Toshikazu Tsutsui; Tohru Koyama; Fumihito Ohta; Yasukazu Mukogawa; Masaaki Furuta; Yohji Mashiko


Archive | 1993

Semiconductor device having a gate electrode of polycrystal layer and a method of manufacturing thereof

Yoshiko Kokawa; Tohru Koyama; Kenji Kusakabe; Katsuhiko Tamura; Yasuna Nakamura


Archive | 2003

System LSI chip having a logic part and a memory part

Tohru Koyama


Archive | 1987

HALBLEITEREINRICHTUNG UND VERFAHREN ZU DEREN HERSTELLUNG

Yoshiko Kokawa; Tohru Koyama; Kenji Kusakabe; Katsuhiko Tamura; Yasuna Nakamura


Archive | 1992

Method of manufacturing semiconductor device having a two layered structure gate electrode

Tohru Koyama; Katsuhiko Tamura; Yasuna Nakamura; Yoshiko Kokawa; Kenji Kusakabe


Archive | 1991

Semiconductor device for use in MOS transistor mfr. - comprising polycrystalline silicon gate electrode with defined crystal orientation, semiconductor substrate and pair of impurity regions

Yoshiko Kokawa; Tohru Koyama; Kenji Kusakabe; Katsuhiko Tamura; Yasuna Nakamura

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