Tristan Cren

Nanometer scale mapping of the density of states in an inhomogeneous superconductor

Using high-speed scanning tunneling spectroscopy (STS), we perform a full mapping of the quasiparticle density of states (DOS) in single crystals of Bi2 − xPbxSr2CaCu208 + δ. The measurements carried out at 5 K showed a complex spatial pattern of important variations of the local DOS on the nanometer scale. Superconducting areas, characterized by a well-pronounced superconducting gap, are coexisting with regions of a peakless gap structure which we attribute to the pseudogap. Within the large superconducting regions, the spectra reveal strong peak/dip/hump signatures, identical to the pristine Bi2Sr2CaCu208 + δ case. On the contrary, in very small superconducting regions this fine structure is attenuated. Such a behavior of the local DOS suggests that the peak/dip/hump fine structure is not only a consequence of the superconducting state, but is also directly related to the scale of the phase coherence. The role of Bi-Pb substitutional disorder is discussed.

Electric‐Pulse‐driven Electronic Phase Separation, Insulator–Metal Transition, and Possible Superconductivity in a Mott Insulator

Experimental evidence of a nonvolatile electric-pulse-induced insulator-to-metal transition and possible superconductivity in the Mott insulator GaTa4 Se8 is reported. Scanning tunneling microscopy experiments show that this unconventional response of the system to short electric pulses arises from a nanometer-scale electronic phase separation generated in the bulk material.HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d’enseignement et de recherche français ou étrangers, des laboratoires publics ou privés. Electric Pulse Induced Resistive Switching, Electronic Phase Separation, and Possible Superconductivity in a Mott insulator C. Vaju, Laurent Cario, Benoît Corraze, Etienne Janod, Vincent Dubost, Tristan Cren, D. Roditchev, D. Braithwaite, Olivier Chauvet

Resistive switching at the nanoscale in the Mott insulator compound GaTa4Se8.

We study the Mott insulator compound GaTa4Se8 in which we previously discovered an electric-field-induced resistive transition. We show that the resistive switching is associated to the appearance of metallic and super-insulating nanodomains by means of scanning tunneling microscopy/spectroscopy (STM/STS). Moreover, we show that local electronic transitions can be controlled at the nanoscale at room temperature using the electric field of the STM tip. This opens the way for possible applications in resistive random access memories (RRAM) devices.

Coherent long-range magnetic bound states in a superconductor

Magnetic atoms embedded in a niobium selenide superconductor are shown to give rise to a long-range coherent bound state extending tens of nanometres.

Unexpected electronic properties of micrometer-thick supracrystals of Au nanocrystals.

We investigated the electronic properties of highly ordered three-dimensional colloidal crystals of gold nanocrystals (7 ± 0.4 nm), called supracrystals. Two kinds of Au supracrystals with typical thicknesses of 300 nm and 5 μm, respectively, are probed for the first time with scanning tunneling microscopy/spectroscopy at 5 K revealing similar power law behavior and showing homogeneous conductance with the fingerprint of isolated nanocrystal. Potential applications evading the size-related risks of nanocrystals could be then considered.

Resistive switching induced by electronic avalanche breakdown in GaTa

Mott transitions induced by strong electric fields are receiving growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators. However, experimental studies are still too scarce to conclude about the mechanism. Here we report a study of the dielectric breakdown in the narrow-gap Mott insulators GaTa4Se(8-x)Te(x). We find that the I-V characteristics and the magnitude of the threshold electric field (Eth) do not correspond to a Zener breakdown, but rather to an avalanche breakdown. Eth increases as a power law of the Mott-Hubbard gap (Eg), in surprising agreement with the universal law Eth is proportional to Eg(2.5) reported for avalanche breakdown in semiconductors. However, the delay time for the avalanche that we observe in Mott insulators is over three orders of magnitude greater than in conventional semiconductors. Our results suggest that the electric field induces local insulator-to-metal Mott transitions that create conductive domains that grow to form filamentary paths across the sample.Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators, however experimental studies are still too scarce to conclude about the mechanism. Here we report a study of the dielectric breakdown in the narrow gap Mott insulators GaTa

_4

_4

Se

Se

_{8-x}

_{8-x}

Te

Te