Tun-Wen Pi

Energy structures and chemical reactions at the Al∕LiF∕Alq3 interfaces studied by synchrotron-radiation photoemission spectroscopy

The chemical properties and energy levels of Al∕LiF∕Alq3 were investigated via high-resolution synchrotron-radiation photoemission spectroscopy. No clear chemical reaction was found with LiF deposited on Alq3. The core-level spectra show that Li+ ion and Alq3 anion are created only after Al is deposited on LiF∕Alq3 surfaces. Combined with the increase of the electron concentrations indicated by the Fermi-level position in valence-band spectra, the results provide direct evidence of the proposed chemical reaction, 3LiF+Al+3Alq3→AlF3+3Li+Alq3−, which leads to the excellent electron injection efficiency in Al∕LiF∕Alq3.

Electronic and chemical properties of molybdenum oxide doped hole injection layers in organic light emitting diodes

The origins of barrier lowering leading to high efficient organic light emitting devices with incorporation of molybdenum oxide (MoOx) in anode structures are investigated. Ultraviolet and x-ray photoemission spectra reveal that p-type doping effects in the organic films and carrier concentration increase at the anode interfaces cause the hole injection barrier lowering. The gap states, which help carrier injection from the anodes, resulted from the oxygen deficiency in MoOx due to the interaction of organic materials and MoOx.

Electronic and chemical properties of cathode structures using 4,7-diphenyl-1,10-phenanthroline doped with rubidium carbonate as electron injection layers

The electronic properties and chemical interactions of cathode structures using 4,7-diphenyl-1, 10-phenanthroline (Bphen) doped with rubidium carbonate (Rb2CO3) as electron injection layers were investigated. Current-voltage characteristics reveal that the devices with Bphen/Rb2CO3/Al as cathode structures possess better electron injection efficiency than those with cathode structures of Bphen/LiF/Al. Ultraviolet and x-ray photoemission spectroscopy shows that n-type doping effects resulting from Rb2CO3 and the gap states created by aluminum deposition are both keys to the improved carrier injection efficiency. Moreover, theoretical calculation indicates that the chemical reaction between aluminum and the nitrogen atoms in Bphen is the origin of the gap states.

Influences of evaporation temperature on electronic structures and electrical properties of molybdenum oxide in organic light emitting devices

The influence of evaporation temperatures on the electronic structures of molybdenum oxide (MoOx) films and the electrical properties of organic light emitting diodes were investigated. MoOx films evaporated at a high temperature and a high deposition rate are close to a stoichiometric phase, but become less effective when they are used as a hole injection layer. However, when MoOx is evaporated at a lower temperature and a slower rate, there are large amounts of defect-related states present in the forbidden gap, which make the films behave like a high work function conductor and an effective hole injection layer.

Graphene Anodes and Cathodes: Tuning the Work Function of Graphene by Nearly 2 eV with an Aqueous Intercalation Process

To expand the applications of graphene in optoelectronics and microelectronics, simple and effective doping processes need to be developed. In this paper, we demonstrate an aqueous process that can simultaneously transfer chemical vapor deposition grown graphene from Cu to other substrates and produce stacked graphene/dopant intercalation films with tunable work functions, which differs significantly from conventional doping methods using vacuum evaporation or spin-coating processes. The work function of graphene layers can be tuned from 3.25 to 5.10 eV, which practically covers the wide range of the anode and cathode applications. Doped graphene films in intercalation structures also exhibit excellent transparency and low resistance. The polymer-based solar cells with either low work function graphene as cathodes or high work function graphene as anodes are demonstrated.

Enhancement in current efficiency in organic light-emitting diodes with incorporation of subphthalocyanine

A highly efficient hole injection material, boron subphthalocyanine chloride (SubPc), was incorporated in organic light-emitting diodes. Device performance is greatly enhanced by inserting an ultrathin layer of SubPc between anodes and N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidene (NPB). Electronic structures and chemical reaction at the interface between NPB and SubPc are also investigated by photoemission spectroscopy with synchrotron radiation sources. Extra states are observed at the forbidden gap of SubPc with deposition of NPB, resulting from the broken bonds between boron and chlorine on SubPc with presence of NPB. These gap states are attributed to the improvement of device performance.

High-efficiency small-molecule-based organic light emitting devices with solution processes and oxadiazole-based electron transport materials.

We demonstrate high-efficiency small-molecule-based white phosphorescent organic light emitting diodes (PHOLEDs) by single-active-layer solution-based processes with the current efficiency of 17.3 cdA(-1) and maximum luminous efficiency of 8.86 lmW(-1) at a current density of 1 mA cm(-2). The small-molecule based emitting layers are codoped with blue and orange phosphorescent dyes. We show that the presence of CsF/Al at cathodes not only improves electron transport in oxadiazole-containing electron transport layers (ETLs), but also facilitates electron injection through the reacted oxadiazole moiety to reduce interface resistance, which results in the enhancement of current efficiency. By selecting oxadiazole-based materials as ETLs with proper electron injection layer (EIL)/cathode structures, the brightness and efficiency of white PHOLEDs are significantly improved.

Investigations of electron-injection mechanisms and interfacial chemical reactions of Bphen doped with rubidium carbonate in OLEDs

The effectiveness of carrier injection in electron transport layers has been investigated for high efficiency organic light emitting devices. Via ultraviolet and x-ray photoemission spectroscopy (UPS and XPS), the carrier band structures, interfacial interactions and electron-injection mechanisms are discussed. Acting as a good hole blocking layer with higher mobility for electrons, 4,7-diphenyl-1, 10-phenanthroline (Bphen) was chosen to be the electron transport layer. The performance of device used Rb2CO3 doped into Bphen is obviously better than the device even used LiF with aluminum as cathode. According to the UPS spectra, the Fermi level of Bphen after doped with the ratio of 2% and 8% rubidium carbonate (Rb2CO3) shifts toward the lowest unoccupied molecular orbital as a result of charge transfer from rubidium atom to Bphen, showing that electron-injection ability would be improved based on strong n-type doping effect. Moreover, when aluminum is deposited as a thin layer on the surface of Bphen doped with Rb2CO3, the peak around 5 eV, which is attributed to the delocalized Pi-electrons decreases as gap states appear around 2.8 eV at the top of the highest occupied molecular orbital. There are changes in the binding energy of core levels of rubidium, nitrogen and aluminum, which indicates a negative charge transfer to Bphen at the interface that could have the reduction of electroninjection barrier height. Thus, the interfacial chemical reaction leads to the excellent electron injection ability could be demonstrated.

Low-temperature electronic structures and intramolecular interaction of oligofluorenes studied by synchrotron photoemission spectroscopy

Influences of temperature and intramolecular interaction on the electronic structures of oligofluorenes were systematically studied via synchrotron radiation photoemission spectroscopy and quantum chemical calculations. Our results show that the oligofluorene thin films deposited at substrates of different temperatures will alter the electronic structures, which results from the change of interunit angles in 2,7-bis[9,9-di(4-methylphenyl)-fluoren-2-yl]-9,9-di(4-methylphenyl)fluorine molecules. The fluorene-units at low temperature are almost perpendicular to each other and the interunit angle of stable state is 41° at room temperature.