Tuviah E. Schlesinger

Integrated electro-optic lens/scanner in a LiTaO3 single crystal.

We report what we believe to be the first stand-alone integrated electro-optic lens and scanner fabricated on a single crystal of Z-cut LiTaO(3). The independently controlled lens and scanner components consist of lithographically defined domain-inverted regions extending through the thickness of the crystal. A lens power of 0.233 cm(-1) kV(-1) and a deflection angle of 12.68 mrad kV(-1) were observed at the output of the device.

Shape-optimized electrooptic beam scanners: analysis, design, and simulation

This paper presents the analysis of a general nonrectangular electrooptic (EO) scanner and compare its performance to a rectangular device. Since the scanning sensitivity of an EO scanner is inversely proportional to its width, high sensitivity requires the device contour to be close to the ray trajectory of a beam propagating through the device. Accordingly, a shaped-optimized scanner is designed so that the beam trajectory at maximum deflection is parallel to the device contour. A beam propagation method (BPM) simulation shows the performance agrees well with the analysis.

Integrated optical device with second-harmonic generator, electrooptic lens, and electrooptic scanner in LiTaO/sub 3/

This paper reports the first demonstration of an integrated optical device in z-cut LiTaO/sub 3/ that contains the following three functional parts: a quasiphase-matched second-harmonic generation (SHG) grating, an electrooptic (EO) lens, and an electrooptic scanner. The SHG device consists of channel waveguides passing through periodic domain-inverted gratings. The frequency of the input infrared (IR) light at 864 nm was doubled into blue light at 432 nm. A stack of EO lenses was used to collimate the light from the channel waveguide. The measured beam size at the output facet for various applied voltages to the lenses agreed with simulation. After collimation, light passes through an EO scanner that controls the angle of the output beam. A scanning sensitivity of 17 mrad/kV was measured for the scanner, compared to the calculated value of 15 mrad/kV.

Electrooptic lens stacks on LiTaO/sub 3/ by domain inversion

The design and analysis of one-dimensional (1-D) electrooptic lens stacks is presented. Experimental results of a seven-element stack fabricated on Z-cut LiTaO/sub 3/ substrates using domain inversion support the analysis. The optical focusing power of these bulk stacks is shown to be voltage-controlled.

Electrooptic wafer beam deflector in LiTaO/sub 3/

A novel electrooptic beam deflector is reported based on ferroelectric domain inversion extending through the thickness of a Z-cut LiTaO/sub 3/ wafer. The selective domain inversion is achieved by electric-field poling assisted by proton exchange, rather than proton exchange followed by rapid thermal annealing. The deflection sensitivity of the device was measured to be 5.0 mrad/KV. This is 93% of the theoretical value for this geometry, and a significant improvement over the value of 80% of theoretical previously reported for a waveguide deflector. This improvement is attributed to the new domain inversion process. No degradation of deflection sensitivity is observed up to the frequency of 300 KHz, which is then limited by the response time of detectors.