Uei-Shin Chen

Synthesis and characterization of self-catalyzed CuO nanorods on Cu∕TaN∕Si assembly using vacuum-arc Cu deposition and vapor-solid reaction

Large-area arrays of copper oxide (CuO) nanorods were self-catalyzed and selectively grown on a Cu∕TaN∕Si assembly by combining vacuum-arc Cu deposition and vapor-solid reaction. X-ray-diffraction spectra showed the peaks of Cu films and CuO nanorods, respectively. Field-emission scanning electron microscopy images showed semialigned CuO nanorods with diameters of ∼40–80nm. High-resolution transmission electron microscopy images showed the structure of individual CuO nanorods and their [111] growth direction. Auger electron spectroscopy depth profiles showed the elemental distribution of the CuO∕a-TaN∕Si assembly. X-ray photoelectron spectrometry identified the chemical nature of the CuO nanorods. Their electron field-emission properties are discussed from the current-density–voltage curves and Fowler-Nordheim plots.

Gap-filling capability and adhesion strength of the electroless-plated copper for submicron interconnect metallization

The major goal of this study is to combine the plasma immersion ion implantation (PIII) to implant Pd catalyst onto a TaN diffusion barrier layer and the electroless plated Cu to accomplish the ultralarge scale integrated interconnection metallization. Both patterned and nonpatterned wafers were employed using Pd as a catalyst by PIII after which copper was electroless plated onto a TaN/FSG/Si multilayer structure. The Pd atoms were sputtered from a negatively biased target and ionized in an argon inductively coupled plasma. The Pd ions were adequately implanted into the substrate with a highly pulsed negative bias (∼4000 V). Characterized by field enhanced scanning electron microscopic (FESEM) cross-section images of FESEM, and under the circumstances of higher substrate bias voltage and plasma ionization, the electroless copper grows upward from the bottom of the vias (width: 0.25 μm, aspect ratio: 7), with an excellent gap filling ability. The result of this process, by employing the mechanical pull-up...

Characterization and Cathodoluminescence of Beak-Like SnO2 Nanorods

Single crystalline tetragonal rutile SnO2 nanorods with curved beak-like tips of various lengths were synthesized using Au as a catalyst by thermal evaporation with different precursor flow rates. The cathodoluminescence (CL) spectrum shows that the long beak-like SnO2 nanorods exhibit stronger orange emission at 600 nm, while the short beak-like SnO2 nanorods exhibit stronger blue emission at 480 nm. The morphology and optical properties can be modified by altering the oxygen content.

Rapid Synthesis of Bundled Tungsten Oxide Nanowires by Microwave Plasma-Enhanced Chemical Vapor Deposition and Their Optical Properties

In recent years, the synthesis of one-dimensional nanomaterials has assumed considerable importance because of the potential applications of these nanomaterials especially in nanodevices. In this study, bundled tungsten oxide (W 18 O 49 ) nanowires having diameters of 25-60 nm and lengths of several micrometers were fabricated on Si substrates within 1.5 min by microwave plasma-enhanced chemical vapor deposition (MPECVD). The crystal structure, morphology, and chemical composition of these nanowires were characterized by scanning electron microscopy, X-ray diffraction, transmission electron microscopy, energy-dispersive X-ray spectroscopy, and cathodoluminescence (CL) spectrometry. The growth of the W 18 O 49 nanowires occurred along the [010] plane. Because no catalysts were used, it was suggested, and then analytically confirmed, that the vapor-solid mechanism was suggested for this growth process; this has been confirmed analytically. An orange emission was observed in the CL spectra, suggesting that the W 18 O 49 nanowires exhibited a redshift, resulting from the presence of significant O deficiencies. In this manner, our overall results demonstrate that MPECVD is a highly effective and suitable method for the fabrication of W 18 O 49 nanowires.

Exploring metal vapor vacuum arc implanted copper to catalyze electroless-plated copper film on a TaN/FSG/Si assembly

This work attempted to implant a Cu catalyst into a TaN (500 A)/FSG (1200 A)/Si assembly using a metal vapor vacuum arc ion implanter. The range of the copper dose was between 5.0×1015 and 1.0×1017 cm−2 and the accelerating voltage ranged from 30 to 50 kV. Both blanked and patterned specimens were subsequently deposited with an electroless-plated Cu film. The specimens as a whole were characterized by secondary ion mass spectrometer (SIMS), x-ray diffraction (XRD), and field emission scanning electron microscope (FESEM). The sheet resistance was measured by a four-point probe. A noticed relationship between SIMS depth profiles and the ion energy was established. The XRD spectra also showed that electroless-plated copper film possessed a strongly characteristic peak of Cu(111) preferred orientation. An excellent gap filling in a 0.2-μm-width (AR 7:1) trench/via was observed by FESEM. The sheet electric resistivity of the specimens was decreased to 1.93 μΩ cm after annealing at 500 °C for 1.5 h under an atm...