Yee-Shyi Chang

Internal stress of chemical vapour deposition diamond film on silicon

Abstract The internal stress and strain of chemical vapour deposition (CVD) diamond film deposited on silicon were observed and quantitatively determined by the bending beam technique and the X-ray diffraction peak broadening. The internal stress of the diamond film varies with the growth parameters during the deposition. The crystallinity and quality of the diamond film decline with increasing concentration of CH 4 H 2 , the result of which is the build-up of compressive stress. The compressive stress can be partly released by improving the diamond crystallinity of the film. For instance, the addition of argon to higher concentrations of CH 4 H 2 can effectively enhance the concentration of hydrogen atoms and therefore increase the ratio of sp 3 sp 2 which is required for a high quality of diamond film. It is interesting to note the variation in the morphology of the CVD diamond film synthesized at higher ratios of CH 4 H 2 from a ball-like shape to a mixture of {111} and {100} facets and finally to {100} facets as the concentration of argon increases from 0% to 33.3%.

Characterization and Cathodoluminescence of Beak-Like SnO2 Nanorods

Single crystalline tetragonal rutile SnO2 nanorods with curved beak-like tips of various lengths were synthesized using Au as a catalyst by thermal evaporation with different precursor flow rates. The cathodoluminescence (CL) spectrum shows that the long beak-like SnO2 nanorods exhibit stronger orange emission at 600 nm, while the short beak-like SnO2 nanorods exhibit stronger blue emission at 480 nm. The morphology and optical properties can be modified by altering the oxygen content.

Exploring metal vapor vacuum arc implanted copper to catalyze electroless-plated copper film on a TaN/FSG/Si assembly

This work attempted to implant a Cu catalyst into a TaN (500 A)/FSG (1200 A)/Si assembly using a metal vapor vacuum arc ion implanter. The range of the copper dose was between 5.0×1015 and 1.0×1017u200acm−2 and the accelerating voltage ranged from 30 to 50 kV. Both blanked and patterned specimens were subsequently deposited with an electroless-plated Cu film. The specimens as a whole were characterized by secondary ion mass spectrometer (SIMS), x-ray diffraction (XRD), and field emission scanning electron microscope (FESEM). The sheet resistance was measured by a four-point probe. A noticed relationship between SIMS depth profiles and the ion energy was established. The XRD spectra also showed that electroless-plated copper film possessed a strongly characteristic peak of Cu(111) preferred orientation. An excellent gap filling in a 0.2-μm-width (AR 7:1) trench/via was observed by FESEM. The sheet electric resistivity of the specimens was decreased to 1.93 μΩu200acm after annealing at 500u200a°C for 1.5 h under an atm...

Defect properties of high-k/metal-gate metal–oxide–semiconductor field-effect transistors determined by characterization of random telegraph noise

The defect severity in n-channel high-k/metal-gate MOSFETs is analyzed with the trap energy level extracted from the random telegraph noise (RTN). The external factors of are the gate overdrive and the trap depth . By observing the RTN phenomenon at the same , the drain current was found to be low in devices to which a low gate overdrive was applied. However, by fixing the gate overdrive, devices with a low initial show a high fluctuation and a small . This method enables the determination of defect severity in future advanced devices.