Ulrich Zimmermann | Researchain

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Archive | 2001

Bitline twist with equalizer function

Ulrich Zimmermann

Archive | 1998

Memory cell array and corresponding manufacturing process

Thomas Böhm; Manfred Hain; Armin Kohlhase; Yoichi Otani; Andreas Rusch; Till Schlösser; Alexander Trüby; Volker Weinrich; Ulrich Zimmermann

Archive | 1998

Read-only memory cell array and method for fabricating it

Alexander Trueby; Ulrich Zimmermann; Armin Kohlhase

Archive | 2002

Semiconductor read-only memory and method of manufacturing the same

Ulrich Zimmermann

Archive | 2002

Current measurement circuit and method for voltage regulated semiconductor integrated circuit devices

Joerg Vollrath; Philip Moore; Ulrich Zimmermann

Archive | 1999

Center node for deep trench capacitors

Ulrich Zimmermann; Thomas Achammer

Archive | 2002

Memory cell configuration and corresponding production process

Ulrich Zimmermann; Thomas Böhm; Manfred Hain; Armin Kohlhase; Yoichi Otani; Andreas Rusch; Alexander Trüby

Archive | 2007

Trench DRAM semiconductor memory has additional p-type anti-punch zone in semiconductor under neighboring strips of shallow trench isolation

Ralf Gerber; Ulrich Zimmermann

Archive | 2007

Series resistance and/or resistance-capacitance-constant measuring method for e.g. dynamic random access memory, involves connecting storage cell to ring oscillator, and measuring frequencies that are resulting from oscillator

Ulrich Zimmermann

Archive | 2006

Bit conducting structure of DRAM comprises a number of parallel bit conductors in a storage element, which a arranged on different levels

Ulrich Zimmermann

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