Ulrich Zimmermann

Bitline twist with equalizer function

Memory cell array and corresponding manufacturing process

Read-only memory cell array and method for fabricating it

Semiconductor read-only memory and method of manufacturing the same

Current measurement circuit and method for voltage regulated semiconductor integrated circuit devices

Center node for deep trench capacitors

Memory cell configuration and corresponding production process

Trench DRAM semiconductor memory has additional p-type anti-punch zone in semiconductor under neighboring strips of shallow trench isolation

Series resistance and/or resistance-capacitance-constant measuring method for e.g. dynamic random access memory, involves connecting storage cell to ring oscillator, and measuring frequencies that are resulting from oscillator

Bit conducting structure of DRAM comprises a number of parallel bit conductors in a storage element, which a arranged on different levels